MMBT3904-HF (NPN)
QW-JTR02 Page 1
REV:A
Maximum Ratings (at TA=25°C unless otherwise noted)
Typ
Symbol
Parameter Min
Max
Unit
Features
-Epitaxial planar die construction
-As complementary type, the PNP
transistor MMBT3904-HF is recommended
Dimensions in inches and (millimeter)
SOT-23
1
Base
2
Emitter
Collector
3
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector dissipation
Thermal resistance, junction to ambient
Storage temperature and junction temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TSTG, TJ-55
60
40
6
0.2
0.2
625
+150
V
V
V
A
W
OC/W
OC
Comchip Technology CO., LTD.
Symbol
Parameter Conditions Min
Max
Unit
Electrical Characteristics (at TA=25°C unless otherwise noted)
Collector-Base breakdown voltage
0.1
IC =100μA , IE=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter saturation voltage
Collector-Emitter saturation voltage
Transition frequency
Delay time
Storage time
Rise time
Fall time
IC =1mA , IB=0
IE =100μA , IC=0
VCB=60V , IE=0
VCE=30V , VBE(off)=3V
VEB=5V , IC=0
VCE=1V , IC=10mA
VCE=1V , IC=50mA
IC=50mA , IB=5mA
IC=50mA , IB=5mA
VCE=20V , IC=10mA
f=100MHZ
VCC=3.0V , VBE=-0.5V
IC=10mA , IB1=1.0mA
VCC=3.0V , IC=10mA
IB1=IB2=1.0mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
40
60
6
50
0.1
400
100
60
0.3
0.95
300
35
35
200
50
V
V
V
µA
nA
µA
V
V
Mhz
nS
nS
nS
nS
3
1 2
0.118(3.00)
0.110(2.80)
0.055(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.002(0.05)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.005(0.20) min
General Purpose Transistor
RoHS Device
Halogen Free
RATING AND CHARACTERISTIC CURVES (MMBT3904-HF)
Page 2
REV:A
Fig.1 Typical pulsed current gain
V.S. Collector current
400
300
200
100
0
hFE- Typical pulsed current gain
Ic- Collector current (mA)
0.1 1 10 100
VCE=5V
o
125C
o
125C
o
125C
o
125C
o
125C
o
125C
o
125C
o
25C
o
125C
o
125C
o
125C
o
-40C
500
Fig.2 Collector-Emitter saturation
voltage V.S. Collector current
0.10
0.05
VCE(sat)- Collector-Emitter voltage(V)
Ic- Collector current (mA)
0.1 1 10 100
0.15
ß=10
o
-40C
o
125C
o
25C
100
Fig.3 Base-Emitter saturatioin
voltage V.S. Collector current
Ic - Collector current (mA)
0.1 1 10
0.4
0.6
0.8
1
E
B) Bs-eiota V
V(sat-aemtter vlge()
o
125C
ß=10
o
-40C
o
25C
100
Fig.4 Base-Emitter ON voltage
V.S. Collector current
Ic - Collector current (mA)
0.1 1 10
0.4
0.6
0.8
1
BE ONat e()
V()- B se-emiterv oltag V
0.2
VCE=5V
o
125C
o
125C
o
125C
o
125C
o
125C
o
125C
o
125C
o
25C
o
125C
o
125C
o
125C
o
-40C
ICBO- Collector current (nA)
25 50 75
10
500
100
1
0.1
100
Fig.5 Collector-cutoff current V.S.
Ambient temperature
o
TA- Ambient temperature (C)
125 150
VCB=30V
Fig.6 Capacitance V.S. Reverse
bias voltage
1
2
3
4
5
10
Capacitance (pF)
0.1 1 10 100
Reverse bias voltage (V)
Cobo
f=1.0MHz
Cibo
Comchip Technology CO., LTD.
QW-JTR02
General Purpose Transistor
Page 3
REV:A
Comchip Technology CO., LTD.
BCdD D2
D1
E F P P0P1
SOT-23
SYMBOL
A
W W1
(mm)
(inch) 0.122 0.004±0.112 0.004±0.055 0.004±0.061 0.004±7.008 0.04±1.969 MIN. 0.512 0.008±
SOT-23
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.315 0.008±0.567 MAX.
3.10 ± 0.10 2.85 0.10±
4.00 0.10±
1.55 0.10±
3.50 0.05±1.75 0.10±
50.0 MIN. 13.0 0.20±1.40 0.10±
4.00 0.10± 2.00 0.05± 8.00 0.30± 14.4 MAX.
178 1±
QW-JTR02
General Purpose Transistor
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Index hole
d
E
F
B W
P
P0
P1
A
Page 4
REV:A
Comchip Technology CO., LTD.
Suggested PAD Layout
SIZE
(inch)
0.031
(mm)
0.80
0.95
0.95
0.037
0.037
SOT-23
Park Number
MMBT3904-HF
Marking Code
1AM
Marking Code
2.02 0.080
E3.03 0.120
Standard Packaging
Case Type
Qty per Reel
(Pcs)
3000
SOT-23
Reel Size
(inch)
7
A
D
CB
A
B
C
D
1AM
3
1 2
E
QW-JTR02
General Purpose Transistor
