1998. 6. 15 1/1
SEMICONDUCTOR
TECHNICAL DATA
BSS63
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
Type Name
Marking
Lot No.
T6
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -100 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=-10ỌA, IE=0 -110 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10ỌA, IC=0 -6 - - V
Collector Cut-off Current ICBO
VCB=-90V, IE=0 - - -100 nA
VCB=-90V, IE=0, Ta=150ᴱ- - -50 ỌA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -200 nA
DC Current Gain hFE
VCE=-1V, IC=-10mA 30 - -
VCE=-1V, IC=-25mA 30 - -
Base-Emitter Saturation Voltage VBE(sat) IC=-25mA, IB=-2.5mA - - -0.9 V
Collector-Emitter Saturation Voltage VCE(sat)
IC=-25mA, IB=-2.5mA - - -0.25
V
IC=-75mA, IB=-7.5mA - - -0.9
Transition Frequency fTIC=-25mA, VCE=-5V, f=100MHz 50 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 3 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -110 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -6 V
Collector Current IC-100 mA
Emitter Current IE100 mA
Collector Power Dissipation PC200 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -65ᴕ150 ᴱ
