2N5194G, 2N5195G Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features http://onsemi.com * Complement to NPN 2N5191, 2N5192 * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Collector-Emitter Voltage 2N5194G 2N5195G Symbol Value Unit VCEO Vdc 60 80 COLLECTOR 2, 4 Collector-Base Voltage 2N5194G 2N5195G VCB Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 40 320 W W/C - 65 to +150 C/W Operating and Storage Junction Temperature Range 4 AMPERE POWER TRANSISTORS PNP SILICON 60 - 80 VOLTS Vdc 60 80 TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data. 3 BASE 1 EMITTER TO-225 CASE 77-09 STYLE 1 1 2 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 3.12 C/W MARKING DIAGRAM YWW 2 N519xG Y WW 2N519x G = Year = Work Week = Device Code x = 4 or 5 = Pb-Free Package ORDERING INFORMATION *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2013 December, 2013 - Rev. 15 1 Device Package Shipping 2N5194G TO-225 (Pb-Free) 500 Units / Bulk 2N5195G TO-225 (Pb-Free) 500 Units / Bulk Publication Order Number: 2N5194/D 2N5194G, 2N5195G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS VCEO(sus) Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) 2N5194G 2N5195G Vdc 60 80 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N5194G (VCE = 80 Vdc, IB = 0) 2N5195G ICEO Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5194G (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5195G (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5194G (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5195G ICEX Collector Cutoff Current (VCB = 60 Vdc, IE = 0) 2N5194G (VCB = 80 Vdc, IE = 0) 2N5195G ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO - - mAdc - 1.0 - 1.0 mAdc - -0.1 - 0.1 - 2.0 - 2.0 mAdc - 0.1 - 0.1 - 1.0 mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5194G 2N5195G (IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5194G 2N5195G hFE Collector-Emitter Saturation Voltage (Note 3) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) Base-Emitter On Voltage (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) - 25 20 100 80 10 7.0 - - - - 0.6 1.4 - 1.2 2.0 - Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data. 3. Pulse Test: Pulse Width 300ms, Duty Cycle 2.0%. http://onsemi.com 2 2N5194G, 2N5195G hFE , DC CURRENT GAIN (NORMALIZED) 10 7.0 5.0 TJ = 150C VCE = 2.0 V VCE = 10 V 3.0 2.0 1.0 0.7 0.5 25C -55C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 3.0 4.0 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 2.0 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 TJ = 25C 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region TJ = 25C VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 V, TEMPERATURE COEFFICIENTS (mV/C) 2.0 2.0 3.0 4.0 +2.5 *APPLIES FOR IC/IB hFE @ VCE TJ = -65C to +150C +2.0 +1.5 +1.0 +0.5 *qVC for VCE(sat) 0 -0.5 -1.0 -1.5 qVB for VBE -2.0 -2.5 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. "On" Voltage Figure 4. Temperature Coefficients http://onsemi.com 3 2.0 3.0 4.0 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 2N5194G, 2N5195G 103 IC, COLLECTOR CURRENT (A) VCE = 30 Vdc 102 TJ = 150C 101 100C 100 REVERSE 10-1 FORWARD 25C 10-2 10-3 +0.4 +0.3 +0.2 +0.1 ICES 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 107 VCE = 30 V 106 IC = 10 x ICES 105 IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 103 102 20 40 60 VBE, BASE-EMITTER VOLTAGE (VOLTS) VCC TURN-ON PULSE RC RB SCOPE APPROX +9.0 V +4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS t3 TURN-OFF PULSE 200 Ceb 100 Ccb 70 t1 7.0 ns 100 < t2 < 500 ms t3 < 15 ns DUTY CYCLE 2.0% 50 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance 2.0 2.0 IC/IB = 10 TJ = 25C 1.0 1.0 0.3 0.2 tr @ VCC = 10 V td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.05 0.07 0.1 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C ts 0.7 0.5 tr @ VCC = 30 V t, TIME (s) t, TIME (s) 160 300 Figure 7. Switching Time Equivalent Test Circuit 0.1 0.07 0.05 140 500 Cjd<<Ceb t1 Vin 0.7 0.5 120 TJ = 25C Vin t2 APPROX -11 V 100 Figure 6. Effects of Base-Emitter Resistance CAPACITANCE (pF) APPROX -11 V 80 TJ, JUNCTION TEMPERATURE (C) Figure 5. Collector Cut-Off Region VBE(off) Vin 0 IC ICES 104 0.3 0.2 0.1 0.07 0.05 2.0 0.03 0.02 0.05 0.07 0.1 3.0 4.0 Figure 9. Turn-On Time tf @ VCC = 30 V tf @ VCC = 10 V 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) Figure 10. Turn-Off Time http://onsemi.com 4 2.0 3.0 4.0 2N5194G, 2N5195G Note 1: 10 IC, COLLECTOR CURRENT (AMP) 5.0 There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150_C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150_C. At high-case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 ms 5.0 ms 100 ms TJ = 150C 2.0 dc 1.0 SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 0.5 0.2 2N5194 0.1 1.0 2N5195 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 11. Rating and Thermal Data Active-Region Safe Operating Area 1.0 0.7 0.5 D = 0.5 0.3 qJC(max) = 3.12C/W 0.2 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 SINGLE PULSE 0.02 0.03 0.01 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 12. Thermal Response DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model shown in Figure 13. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find qJC(t), multiply the value obtained from Figure 12 by the steady state value qJC. Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in junction temperature is therefore: tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f = Figure 13. DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C http://onsemi.com 5 2N5194G, 2N5195G PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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