MAXIMUM RATINGS: (TC=25°C) TIP140 TIP141 TIP142
SYMBOL TIP145 TIP146 TIP147 UNITS
Collector-Base Voltage VCBO 60 80 100 V
Collector-Emitter Voltage VCEO 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC10 A
Peak Collector Current ICM 20 A
Base Current IB0.5 A
Power Dissipation PD125 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 1.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO VCB=Rated VCBO 1.0 mA
ICEO VCE=1/2Rated VCEO 2.0 mA
IEBO VEB=5.0V 2.0 mA
BVCEO IC=30mA (TIP140, TIP145) 60 V
BVCEO IC=30mA (TIP141, TIP146) 80 V
BVCEO IC=30mA (TIP142, TIP147) 100 V
VCE(SAT) IC=5.0A, IB=10mA 2.0 V
VCE(SAT) IC=10A, IB=40mA 3.0 V
VBE(ON) VCE=4.0V, IC=10A 3.0 V
VFIF=10A 2.8 V
hFE VCE=4.0V, IC=5.0A 1000
hFE VCE=4.0V, IC=10A 500
ton IC=10A, IB1=IB2=40mA, RL=3.0Ω 0.9 μs
toff IC=10A, IB1=IB2=40mA, RL=3.0Ω 4.0 μs
TIP140 TIP141 TIP142 NPN
TIP145 TIP146 TIP147 PNP
SILICON POWER DARLINGTON
COMPLEMENTARY TRANSISTORS
TO-218 TRANSISTOR CASE
Central
Semiconductor Corp.
TM
R2 (1-August 2008)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP140,
TIP145 series types are Complementary Silicon
Power Darlington Transistors manufactured by
the epitaxial base process, designed for general
purpose amplifier and low speed switching
applications where high gain is required.
MARKING: FULL PART NUMBER