1N5059 thru 1N5062
General Purpose Silicon Rectifier
Fast Recovery
Features:
DControlled Avalanche Characteristics
DLow Reverse Current
DHigh Surge Current Loading
Applications:
DRectification Diode, General Purpose
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Maximum Reverse Voltage, VR
1N5059 200V....................................................................
1N5060 400V....................................................................
1N5061 600V....................................................................
1N5062 800V....................................................................
Maximum Repetitive Peak Reverse Voltage, VRRM
1N5059 200V....................................................................
1N5060 400V....................................................................
1N5061 600V....................................................................
1N5062 800V....................................................................
Peak Forward Surge Current (tp = 10ms, half−sinewave), IFSM 50A...........................
Average Forward Current, IFAV
RthJA = 45K/W, TA = +50C2A.....................................................
RthJA = 100K/W, TA = +75C0.8A..................................................
Max. Pulse Energy in Avalanche Mode, Non−Repetitive (Inductive Load Switch OFF), ER
I(BR)R = 1A, Inductive Load 20mJ..................................................
Operating Junction Temperature Range, TJ−55 to +175C..................................
Storage Temperature Range, Tstg −55 to +175C..........................................
Thermal Resistance, Junction−to−Ambient, RthJA
Lead Length = 10mm, TL = Constant 45K/W.........................................
On PC Board with Spacing 25mm 100K/W..........................................
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Voltage VFIF = 1A − − 1 V
IF = 2.5A − − 1.15 V
Reverse Current IRVR = VRRM − − 1A
TJ = +100C− − 10 A
TJ = +150C− − 100 A
Reverse Breakdown Voltage
1N5059
V(BR)R IR = 100A 225 −1600 V
1N5060 450 −1600 V
1N5061 650 −1600 V
1N5062 900 −1600 V
Reverse Recovery Time trr IF = 0.5A, IR = 1A, iR = 0.25A − − 4s
Diode Capacitance CDVR = 0, f = 1MHz −40 −pF
Color Band Denotes Cathode
.180 (4.6) Max.042 (1.07) Max
1.000
(25.4)
Min
.300 (7.6) Max
