Product Standards
Transistors with Built-in Resistor
DRC9123J0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
+30% k
Resistance ratio R1/R2 0.037
0.047
0.057 -
V
0.4 V
Input resistance R1 -30% 2.2
V
Input voltage Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA
1.2
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25
mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80 -
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0 0.2
μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0 0.1
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Collector-base voltage (Emitter open) VCBO IC = 10 μA, IE = 0 50
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Total power dissipation PT 125 mW
Junction temperature Tj 150 °C
VCEO 50 V
Collector current IC 100 mA
Unit: mm
Min Typ
Internal Connection
Resistance
value
Max
1of
R1
2.2 k
R2
47 k
3
Unit
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
Packaging
Marking Symbol:
3. Collector
DRC9123J0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA9123J
DRC5123J in SSMini3 type package
Features
N4
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
SOT-490
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
SSMini3-F3-B
JEITA SC-89
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
C
B
R
1
R
2
E
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
Doc No.
TT4-EA-11654
Revision.
2
Established
:
Revised
:
Product Standards
Transistors with Built-in Resistor
DRC9123J0L
Technical Data ( reference )
Page 2of3
50 μA
100 μA
150 μA
200 μA
250 μA
300 μA
0
0.02
0.04
0.06
0.08
0.1
0.12
024681012
Collector current IC (A)
Collector-emitter voltage VCE (V)
IC - VCE
IB = 400 μA
Ta = 25 350 μA
0
50
100
150
200
250
300
350
400
450
0.0001 0.001 0.01 0.1
Forward current transfer ratio hFE
Collector current IC (A)
hFE - IC
Ta = 85
25
-40
VCE = 10 V
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
Collector-emitter saturation voltage
VCE(sat) (V)
Collector current IC (A)
VCE(sat) - IC
IC/IB = 20
Ta = 85 25
-40
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
0 0.2 0.4 0.6 0.8 1 1.2
Output current Io (A)
Input voltage VIN (V)
Io - VIN
25
Vo = 5 V
Ta = 85
-40
0.1
1
10
100
0.0001 0.001 0.01 0.1
Input voltage VIN (V)
Output current Io (A)
VIN - Io
Vo = 0.2 V
85
25
Ta = -40
0
25
50
75
100
125
150
0 20406080100120140160180200
Total power dissipation PT (mW)
Ambient temperature Ta ()
PT - Ta
Doc No.
TT4-EA-11654
Revision.
2
Established
:
Revised
:
Product Standards
Transistors with Built-in Resistor
DRC9123J0L
Unit: mm
Page
SSMini3-F3-B
3
3of
Land Pattern (Reference) (Unit: mm)
0.26
+0.05
-0.02
1.60
±0.05
0.85
+0.05
-0.03
0.13
+0.05
-0.02
0 to 0.1
1.00
±0.05
1.60
+0.05
-0.03
0.375
±0.050
(0.5) (0.5)
0.70
+0.05
-0.03
(0.45)
(5°)
(5°)
12
3
0.6
1.0
0.6
1.4
Doc No.
TT4-EA-11654
Revision.
2
Established
:
Revised
:
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