Doc No. TT4-EA-11654 Revision. 2 Product Standards Transistors with Built-in Resistor DRC9123J0L DRC9123J0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA9123J DRC5123J in SSMini3 type package 1.6 0.26 0.13 3 Features 0.85 1.6 Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 0.7 Marking Symbol: N4 (0.5) (0.5) 1.0 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Operating ambient temperature Storage temperature VCBO VCEO IC PT Tj Topr Tstg Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) Vi(on) Input voltage Vi(off) Input resistance R1 Resistance ratio R1/R2 Panasonic JEITA Code Rating Unit 50 50 100 125 150 -40 to +85 -55 to +150 V V mA mW C C C Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.5 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 100 A SSMini3-F3-B SC-89 SOT-490 Internal Connection C R1 B R2 E Resistance value R1 R2 2.2 47 Min Typ Max 50 50 0.1 0.5 0.2 80 0.25 1.2 0.4 -30% 2.2 +30% 0.037 0.047 0.057 k k Unit V V A A mA V V V k - Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 1 of 3 Established : 2009-10-22 Revised : 2014-03-20 Doc No. TT4-EA-11654 Revision. 2 Product Standards Transistors with Built-in Resistor DRC9123J0L Technical Data ( reference ) IC - VCE 0.12 125 0.1 Ta = 25 Collector current IC (A) Total power dissipation PT (mW) PT - Ta 150 100 75 50 25 300 A 250 A 200 A 0.06 150 A 0.04 100 A 0.02 50 A 0 0 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 10 450 VCE = 10 V 400 350 Collector-emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 350 A 0.08 Ambient temperature Ta () Ta = 85 300 250 25 200 150 IC/IB = 20 1 25 Ta = 85 0.1 -40 100 50 0 0.0001 0.001 0.01 -40 0.01 0.0001 0.1 Collector current IC (A) 0.001 0.01 0.1 Collector current IC (A) VIN - Io Io - VIN 1.E-02 100 Vo = 5 V Vo = 0.2 V 25 1.E-04 Input voltage VIN (V) Ta = 85 1.E-03 Output current Io (A) IB = 400 A -40 1.E-05 10 Ta = -40 25 1 85 1.E-06 0 0.2 0.4 0.6 0.8 Input voltage VIN (V) 1 1.2 0.1 0.0001 0.001 0.01 Output current Io (A) 0.1 Page 2 of 3 Established : 2009-10-22 Revised : 2014-03-20 Doc No. TT4-EA-11654 Revision. 2 Product Standards Transistors with Built-in Resistor DRC9123J0L SSMini3-F3-B Unit: mm +0.05 1.60-0.03 +0.05 0.13-0.02 +0.05 0.26-0.02 (5) 2 (0.5) (0.5) 1.000.05 0.3750.050 1 1.600.05 +0.05 0.85-0.03 3 0 to 0.1 (0.45) +0.05 0.70-0.03 (5) Land Pattern (Reference) (Unit: mm) 1.4 0.6 0.6 1.0 Page 3 of 3 Established : 2009-10-22 Revised : 2014-03-20 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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