MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal Transistor
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case : SOT- 23 small outline plastic package 2.80 3.00 0.110 0.118
1.20 1.40 0.047 0.055
0.30 0.50 0.012 0.020
1.80 2.00 0.071 0.079
2.25 2.55 0.089 0.100
0.90 1.20 0.035 0.043
Package Packing Marking
SOT-23 3K / 7" Reel 1P
SOT-23 3K / 7" Reel 1P
Maximum Ratings
Notes:1. Valid provided that electrodes are kept at ambient temperature
SOT-23
Weight : 0.008gram (approximately)
Maximum Ratings and Electrical Characteristics
C
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
mW
6
300
V
V
V
40
Collector-Base Voltage
Collector-Emitter Voltage
75
VCBO
VCEO
Power Dissipation PD
Type Number Symbol
F
Unit (inch)
Dimensions
B
Unit (mm)
Features
Mechanical Data
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
A
Epitaxial planar die construction
VEBO
D
E
G
Rating at 25°C ambient temperature unless otherwise specified.
Marking Code : 1P
0.022 REF0.550 REF
High temperature soldering guaranteed: 260°C/10s
Units
Junction and Storage Temperature Range
Thermal Resistance (Junction to Ambient) (Note 1) RθJA
TJ, TSTG
Collector Current
Value
Suggested PAD Layout
IC
Ordering Information
Part No.
MMBT2222A RF
MMBT2222A RFG
Emitter-Base Voltage
°C
600
417
-55 to + 150
mA
°C/W
B
A
C
D
F
E
G
2 Emitter
3 Collector
1 Base
2.0
0.079
0.95
0.037
0.9
0.035
0.8
0.031
Version : A10
MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal Transistor
Electrical Characteristics Units
Collector-Base Breakdown Voltage IE= 0 V
IB= 0 V
IC= 0 V
IE= 0 μA
VBE(off)= 3.0V μA
IC= 0 μA
IC= 500mA
IC= 150mA
IC= 10mA
IC= 1mA
IC= 0.1mA
Collector-Emitter saturation voltage IB= 50mA V
Base-Emitter saturation voltage IB= 50mA V
VCE= 20V f= 100MHz MHz
Output capacitance VCB= 10V f= 1.0MHz pF
Input capacitance VEB= 0.5V f= 1.0MHz pF
VCC=30V VBE(off)=-0.5V IC=150mA IB1=15mA nS
VCC=30V VBE(off)=-0.5V IC=150mA IB1=15mA nS
VCC=30V IC=150mA IB1=-IB2=15mA nS
VCC=30V IC=150mA IB1=-IB2=15mA nS
Tape & Reel specification
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
-
12.30 ±0.20
Collector-Emitter Breakdown Voltage
V(BR)CBO
IEBO
VCE(sat)
ICBO
V(BR)CEO
V(BR)EBO
Symbol
2.00 ±0.05
Emitter-Base Breakdown Voltage
0.229 ±0.013
8.10 ±0.20 W
Collector Cut-off Current
Emitter Cut-off Current
T
D1
D2
W1
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10 P0
P1
E
F
DC current gain
-
-
-
-
IC= 500mA
IC= 500mA
IC= 20mA
IC = 0
Transition frequency
8
25
-
VCE= 10V
IE = 0
300
fT
Cobo
hFE
VCE= 10V
40
100
-
-
-
VCE= 10V 75
-
300
-
VEB= 3.0V
Min Max
0.01
Type Number
IC= 10μA
IC= 10mA
IE= 10μA
VCB= 60V
75
40
6
0.01
VBE(sat)
1.0
2.0
50
35
-
55 Min
Cibo
VCE= 10V
VCE= 10V
Item Symbol Dimension(mm)
A
B
C
1.50 ± 0.10
178 ± 1
d
D
10
25Rise time tr-
Delay time td-
225
Fall time tf-60
Storage time ts-
Collector Cut-off Current VCE= 60V 0.01-
ICEX
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
W1
D1D2
D
T
C
dP1
P0
A
B
FW
E
Direction of Feed
Version : A10
MMBT2222A
300mW, NPN Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Version : A10
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs Ambient Temperature
150
200
250
300
350
01.0
5.0
20
10
30
0.1 101.0 50
CAPACITANCE (pF)
REVERSE VOLTS (V)
Fig. 2Typical Capacitance
Cobo
Cibo
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
IC, COLLECTOR CURRENT (mA)
Fig.3Typical DC Current Gain vs Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V=1.0V
CE
1
10
100
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Gain Bandwidth Product vs. Collector Current
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V= 5V
CE
1
0.1 10 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1
.
0
0.9 V= 5V
CE
T= 25°C
A
T= -50°C
A
T = 150°C
A
110 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
IC
IB
= 10
