MMBT2222
A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT2907A)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
“Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
E
B
C
Top View Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous IC 600 mA
Peak Collector Current ICM 800 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBT2222A
Document number: DS30041 Rev. 12 - 2 1 of 4
www.diodes.com September 2008
© Diodes Incorporated
MMBT2222
A
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 4) Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
MMBT2222A
Document number: DS30041 Rev. 12 - 2 2 of 4
www.diodes.com September 2008
© Diodes Incorporated
Collector-Base Breakdown Voltage V(BR)CBO 75 V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 V IE = 10μA, IC = 0
Collector Cutoff Current ICBO 10 nA
μA VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
Collector Cutoff Current ICEX 10 nA VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current IEBO 10 nA VEB = 3.0V, IC = 0
Base Cutoff Current IBL 20 nA VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain hFE
35
50
75
100
40
50
35
300
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) 0.3
1.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.6
1.2
2.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 8 pF VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure NF 4.0 dB VCE = 10V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td 10 ns VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time tr 25 ns VCC = 3.0V, IC = 150mA, IB1 = 15mA,
VBE(OFF) = 0.5V
Storage Time ts 225 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time tf 60 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
Notes: 4. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400
Note 1
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = 25°C
A
T = 125°C
A
V = 1.0V
CE
MMBT2222
A
10.1 10 100
V , BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4 Base-Emitter Turn-On V oltage
vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
110 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURA TION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 3 Ty pical Collector-Emitter Saturation V oltage
vs. Col lector Cu r re nt
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
C
A
P
A
C
I
T
AN
C
E (
p
F
)
0
5
10
15
20
25
30
3
5
0246810 12 14 16 18 20
f = 1MHz
C
obo
C
ibo
V , REVERSE VOLTS (V)
Fig . 5 Typi cal Cap acitance C haracteris tic s
R
1
10
100
1,000
110
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain Bandwidth Product
vs. Collector Current
C
f,
100
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 7 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
MMBT2222A
Document number: DS30041 Rev. 12 - 2 3 of 4
www.diodes.com September 2008
© Diodes Incorporated
MMBT2222A
Document number: DS30041 Rev. 12 - 2 4 of 4
www.diodes.com September 2008
© Diodes Incorporated
MMBT2222
A
Ordering Information (Note 5)
Part Number Case Packaging
MMBT2222A-7-F SOT-23 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1P
YM
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code J K L M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
A
M
JL
D
F
BC
H
K
G
K1
SOT-23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
0° 8° -
α
All Dimensions in mm
XE
Y
C
Z
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35