2N5401 / MMBT5401
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages. Sourced from Process 74.
MMBT54012N5401
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 150 V
VCBO Collector-Base Voltage 160 V
VEBO E m i tter - Base Voltage 5 . 0 V
ICC ollector Current - Continuous 200 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Characteristic Max Units
2N5401 *MMBT5401
PDTo ta l De vice Dissip at i on
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 2L
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
2N5401 / MMBT5401
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 m A , I B = 0 150 V
V(BR)CBO Col lec t or -B ase Breakd ow n Volt ag e IC = 1 00 µA, IE = 0 16 0 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO C olle c tor Cu toff C u r ren t V CB = 1 20 V, IE = 0
VCB = 120 V, IE = 0 , T A = 100°C50
50 nA
µA
IEBO Em itter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
ON CHARACTERISTICS*
hFE DC Cu r rent G ain IC = 1.0 m A, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V
50
60
50 240
VCE(sat)Co ll ector-E mitter Sa turation Vo ltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.2
0.5 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 1 0 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 1.0
1.0 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurre nt Ga in - Ba ndwidth Product IC = 10 mA, VCE = 1 0 V,
f = 100 MH z 100 300 MHz
Cobo Output Capacitan ce VCB = 1 0 V, IE = 0,
f = 1.0 M Hz 6.0 pF
NF Noise Figure IC = 250 µA, VCE = 5.0 V,
RS = 1.0 kΩ,
f = 1 0 Hz to 15.7 kHz
8.0 dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2
Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p
Itf=0 Vtf=0 Xtf=0 Rb=10)
Symbol Parameter Test Conditions Min Max Un its
PNP General Purpose Amplifier
(continued)
2N5401 / MMBT5401
Typical Characteristics
PNP General Purpose Amplifier
(continued)
Collec to r- Emitte r Satu ra tion
Volt age v s Co llector Cur rent
P74
0.1 1 10 100
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLEC TOR-EMITTER VOLTAGE (V)
CESAT
C
ββ = 1 0
125 ºC
- 40 ºC
25 °C
Base-Em i tter Saturat ion
Voltage vs Collec tor Cur rent
P4
0.1110100
0.2
0.4
0.6
0.8
1
I - COLLECT OR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
ββ = 10
125 ºC
- 40 ºC
25 °C
Base- Emit ter ON Voltage vs
Collector Current
P4
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - CO L L ECTOR CUR REN T (mA)
V - BASE-EMITTER O N VOLTAGE ( V)
BE(ON)
125 ºC
- 40 ºC
25 °C
C
V = 5V
CE
Typica l Pulsed Curr ent Ga in
vs Collec tor Curr ent
0.0001 0.001 0.01 0.1 1
0
50
100
150
200
I - COLLECTOR CURRENT (A)
h - TYPICAL PU LSED CURRENT GAIN
FE
- 40 ºC
25 °C
C
V = 5V
CE
1 25 °C
Collector-Cutoff Current
vs Ambient Temperature
P4
25 50 75 100 125 150
0.1
1
10
100
T - AMBIENT TEMPERATU RE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 100V
CB
º
CBO
Col lector-Em itter Breakdown
Volt age w ith Resist ance
Between Emitter -Base
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTANCE (k )
BV - B REAKDO WN VOLTA GE (V)
ΩΩ
CER
2N5401 / MMBT5401
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Input and Output Capaci tance
vs Reverse Vol tage
0.1 1 10 100
0
20
40
60
80
V - REVERSE BIAS VOLTAGE(V)
CAPACITANCE (pF)
C
f = 1.0 MHz
R
C
cb
eb
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMP ERATURE ( C)
P - POWER DISSI PATION (m W )
D
o
TO-92
SOT-23