2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 150 VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units 2N5401 625 5.0 83.3 *MMBT5401 350 2.8 200 357 mW mW/C C/W C/W 2N5401 / MMBT5401 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 150 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 A, I E = 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage 5.0 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current I E = 10 A, I C = 0 VCB = 120 V, IE = 0 VCB = 120 V, IE = 0, TA = 100C VEB = 3.0 V, IC = 0 I C = 1.0 mA, VCE = 5.0 V I C = 10 mA, VCE = 5.0 V I C = 50 mA, VCE = 5.0 V I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA 50 60 50 I C = 10 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz I C = 250 A, VCE = 5.0 V, RS = 1.0 k, f = 10 Hz to 15.7 kHz 100 50 50 50 nA A nA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage 240 0.2 0.5 1.0 1.0 V V V V 300 MHz 6.0 pF 8.0 dB SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance NF Noise Figure *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10) 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 200 V CE = 5V 150 125 C 25 C 100 - 40 C 50 FE 0 0.0001 0.001 0.01 0.1 1 h I C - COLLECTOR CURRENT (A) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 0.2 25 C 125 C 0.1 - 40 C 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 = 10 0.2 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) P 74 Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 V CE = 5V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 4 P 4 100 V CB = 100V BV CER - BREAKDOWN VOLTAGE (V) Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 220 10 210 200 1 190 0.1 180 25 50 75 100 125 T A - AMBIENT TEMPERATURE (C) P 4 150 170 0.1 1 10 RESISTANCE (k ) 100 1000 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature Input and Output Capacitance vs Reverse Voltage CAPACITANCE (pF) f = 1.0 MHz 60 PD - POWER DISSIPATION (mW) 700 80 600 500 TO-92 SOT-23 400 40 C eb 300 200 20 C cb 0 0.1 1 10 V R - REVERSE BIAS VOLTAGE(V) 100 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 2N5401 / MMBT5401 PNP General Purpose Amplifier