LESHAN RADIO COMPANY, LTD.
K3–1/9
1
3
2
NPN
MMBT3904WT1
PNP
MMBT3906WT1
CASE 419–02, STYLE 3
SOT– 323 / SC–70
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage MMBT3904WT1 V CEO 40 Vdc
MMBT3906WT1 – 40
Collector–Base V oltage MMBT3904WT1 V CBO 60 Vdc
MMBT3906WT1 – 40
Emitter–Base V oltage MMBT3904WT1 V EBO 6.0 Vdc
MMBT3906WT1 – 5.0
C
ollector Current — Continuous
MMBT3904WT1 I C200 mAdc
MMBT3906WT1 – 200
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (1) P D150 mW
T A =25 °C
Thermal Resistance, Junction to Ambient R θJA 833 °C/W
Junction and Storage Temperature T J , T stg
–55 to +150
°C
DEVICE MARKING
MMBT3904WT1 = AM; MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Mi n Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I C = 1.0 mAdc, I B = 0) MMBT3904WT1 V (BR)CEO 40 — Vdc
(I C = –1.0 mAdc, I B = 0) MMBT3906WT1 – 40 —
Collector–Base Breakdown V oltage
(I C = 10 µAdc, I E = 0) MMBT3904WT1 V(BR)CBO 60 — Vdc
(I C = –10 µAdc, I E = 0) MMBT3906WT1 – 40 —
Emitter–Base Breakdown V oltage
(IE= 10 µAdc, I C = 0) MMBT3904WT1 V(BR)EBO 6.0 — Vdc
(I E = –10 µAdc, I C = 0) MMBT3906WT1 – 5.0 —
Base Cutoff Current
(V CE = 30 Vdc, V EB = 3.0 Vdc) MMBT3904WT1 I BL — 50 nAdc
(V CE = –30 Vdc, V EB = –3.0 Vdc) MMBT3906WT1 — -50
Collector Cutoff Current
(V CE = 30 Vdc, V EB = 3.0 Vdc) MMBT3904WT1 I CEX — 50 nAdc
(V CE = –30 Vdc, V EB = –3.0 Vdc) MMBT3906WT1 — – 50
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
<
300 µs; Duty Cycle
<
2.0%.
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed
in the SOT–323/SC–70 which is designed for low power surface mount applications.
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
LESHAN RADIO COMPANY, LTD.
K3–2/9
NPN MMBT3904WT1 PNP MMBT3906WT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS (2)
DC Current Gain h FE ––
(I C = 0.1 mAdc, V CE = 1.0 Vdc) MMBT3904WT1 40 ––
(I C = 1.0 mAdc, V CE = 1.0 Vdc) 70 ––
(I C = 10 mAdc, V CE = 1.0 Vdc) 100 300
(I C = 50 mAdc, V CE = 1.0 Vdc) 60 ––
(I C = 100 mAdc, V CE = 1.0 Vdc) 30 ––
(I C = –0.1 mAdc, V CE = –1.0 Vdc) MMBT3906WT1 60 ––
(I C = –1.0 mAdc, V CE = –1.0 Vdc) 80 ––
(I C = –10 mAdc, V CE = –1.0 Vdc) 100 300
(I C = –50 mAdc, V CE = –1.0 Vdc) 60 ––
(I C = –100 mAdc, V CE = –1.0 Vdc) 30 ––
Collector–Emitter Saturation V oltage VCE(sat) Vdc
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT3904WT1 –– 0.2
(I C = 50 mAdc, I B = 5.0 mAdc) –– 0.3
(I C = –10 mAdc, I B = –1.0 mAdc) MMBT3906WT1 –– – 0.25
(I C = –50 mAdc, I B = –5.0 mAdc) –– – 0.4
Base–Emitter Saturation V oltage V BE(sat) Vdc
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT3904WT1 0.65 0.85
(I C = 50 mAdc, I B = 5.0 mAdc) –– 0.95
(I C = –10 mAdc, I B = –1.0 mAdc) MMBT3906WT1 – 0.65 – 0.85
(I C = –50 mAdc, I B = –5.0 mAdc) –– – 0.95
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f TMHz
(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz) MMBT3904WT1 300 ––
(I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz) MMBT3906WT1 250 ––
Output Capacitance C obo pF
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MMBT3904WT1 –– 4.0
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz) MMBT3906WT1 –– 4.5
Input Capacitance C ibo pF
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT3904WT1 –– 8.0
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT3906WT1 –– 10.0
Input Impedance h ie kΩ
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 1.0 10
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 2.0 12
Voltage Feedback Ratio h re X 10 –4
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 0.5 8.0
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 0.1 10
Small–Signal Current Gain h fe —
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 100 400
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 100 400
Output Admittance h oe µmhos
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 1.0 40
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 3.0 60
Noise Figure NF dB
(V
CE
= 5.0Vdc, I
C
= 100µAdc, R
S
=1.0 kΩ, f =1.0kHz)
MMBT3904WT1 –– 5.0
(V
CE
= –5.0Vdc, I
C
= –100 µAdc, R
S
=1.0 kΩ, f =1.0kHz)
MMBT3906WT1 –– 4.0
LESHAN RADIO COMPANY, LTD.
K3–3/9
SWITCHING CHARACTERISTICS
Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc) MMBT3904WT1 t d—35
(V CC = –3.0 Vdc, V BE = 0.5 Vdc) MMBT3906WT1 — 35 ns
Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc) MMBT3904WT1 t r—35
(I C = –10 mAdc, I B1 = –1.0 mAdc) MMBT3906WT1 — 35 ns
Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc) MMBT3904WT1 t s— 200
(V CC = –3.0 Vdc, I C = –10 mAdc) MMBT3906WT1 — 225 ns
Fall Time (I B1 = I B2 = 1.0 mAdc) MMBT3904WT1 t f—50
(I B1 = I B2 = –1.0 mAdc) MMBT3906WT1 — 75 ns
Figure 1. Delay and Rise Time
Equivalent Test Circuit
MMBT3904WT1
*Total shunt capacitance of test jig and connectors
10 k
+3 V
275
C S < 4.0 pF*
10 k
+3 V
275
C S < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
– 0.5 V
10 < t 1 < 500 µs
DUTY CYCLE = 2% +10.9 V
<1.0 ns
<1 ns
+10.9 V t 1
– 9.1 V
0
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
I C , COLLECTOR CURRENT (mA)
Figure 4. Charge Data
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
V CC = 40 V
I C / I B = 10
Q
T
MMBT3904WT1
T
J
= 25°C
T
J
= 125°C
MMBT3904WT1
C
obo
C
ibo
Q
A
NPN MMBT3904WT1 PNP MMBT3906WT1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 2000.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
10
7.0
5.0
3.0
2.0
1.0
5000
3000
2000
1000
700
500
300
200
100
70
50
Q, CHARGE (pC)
CAPACITANCE (pF)
2. Pulse Test: Pulse Width
<
300 µs; Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
K3–4/9
NPN MMBT3904WT1 PNP MMBT3906WT1
SOURCE RESISTANCE= 200Ω
I
C
= 1.0 mA
I C , COLLECTOR CURRENT (mA)
Figure 8. Fall Time
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
I C , COLLECTOR CURRENT (mA)
Figure 6. Rise Time
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
TIME (ns)
t r , RISE TIME (ns)
t f , FALL TIME (ns)
t ’ s, ST ORAGE TIME (ns)
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)
f, FREQUENCY (kHz)
Figure 9. Noise Figure R S , SOURCE RESISTANCE (kΩ)
Figure 10. Noise Figure
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
V
CC
= 40 V
I
C
/I
B
= 10
V CC=40V
I B1 = I B2
I
C
/I
B
= 10
I
C
/I
B
= 20
t r @V CC=3.0V
40 V
t’s= ts –1/8t f
IB1 = IB2
I
C
/I
B
= 10
t d@V OB=0V
MMBT3904WT1
2.0 V
15 V
MMBT3904WT1
I
C
/I
B
= 10
I
C
/I
B
= 20
MMBT3904WT1
I
C
/I
B
= 10
I
C
/I
B
= 20
MMBT3904WT1
f = 1.0 kHz
I
C
= 0.5 mA
SOURCE RESISTANCE =1.0kΩ
I
C
= 50 µA
SOURCE RESISTANCE= 500Ω
I
C
= 100 µA
SOURCE RESISTANCE= 200 Ω
I
C
= 0.5 mA
MMBT3904WT1 MMBT3904WT1
I
C
= 1.0 mA
I
C
= 100 µA
I
C
= 50 µA
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
51.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
51.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
12
10
8
6
4
2
0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
14
12
10
8
6
4
2
0
MMBT3904WT1
LESHAN RADIO COMPANY, LTD.
K3–5/9
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
h PARAMETERS
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
I C , COLLECTOR CURRENT (mA)
Figure 11. Current Gain I C , COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
I C , COLLECTOR CURRENT (mA)
Figure 13. Input Impedance I C , COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
MMBT3904WT1
h fe, CURRENT GAIN
h oe , OUTPUT ADMITTANCE ( µmhos)
h ie, INPUT IMPEDANCE (k OHMS)
MMBT3904WT1
MMBT3904WT1 MMBT3904WT1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
300
200
100
70
50
30
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20
10
5.0
2.0
1.0
0.5
0.2
100
50
20
10
5
2
1
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
NPN MMBT3904WT1 PNP MMBT3906WT1
LESHAN RADIO COMPANY, LTD.
K3–6/9
MMBT3904WT1
TYPICAL STATIC CHARACTERISTICS
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
I C , COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
C , COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
h FE , DC CURRENT GAIN (NORMALIZED)
V CE, COLLECT OR EMITTER VOLTAGE (VOLTS)
V, VOLTAGE ( VOLTS )
COEFFICIENT (mV/ °C)
I C = 1.0 mA
T J = 25°C
+25°C TO +125°C
θ VC for V CE
MMBT3904WT1
T J = +125°C V CE = 1.0 V
+25°C
–55°C
MMBT3904WT1
10 mA
T J = 25°C
30 mA 100 mA
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
MMBT3904WT1 MMBT3904WT1
–55°C TO +25°C
+25°C TO +125°C
–55°C TO +25°C
θ VB for V BE
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
20
10
0.7
0.5
0.3
0.2
0.1
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0
0.8
0.6
0.4
0.2
0
1.0 2.0 5.0 10 20 50 100 200
1.2
1.0
0.8
0.6
0.4
0.2
00 20 40 60 80 100 120 140 160 180 200
1.0
0.5
0
– 0.5
–1.0
–1.5
–2.0
NPN MMBT3904WT1 PNP MMBT3906WT1
LESHAN RADIO COMPANY, LTD.
K3–7/9
MMBT3906WT1
V
CC
= 40 V
I
B1
= I
B2
Figure 19. Delay and Rise Time
Equivalent Test Circuit Figure 20. Storage and Fall Time
Equivalent Test Circuit
1N916 C S < 4 pF*
C S < 4 pF*
< 1 ns
+10.6 V 300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2% t 1
3 V
275
10 k
3 V
275
10 k 0
10 < t 1 < 500 µs
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
C
ibo
MMBT3906WT1 MMBT3906WT1
MMBT3906WT1
MMBT3906WT1
I C , COLLECTOR CURRENT (mA)
Figure 24. Fall Time
I C , COLLECTOR CURRENT (mA)
Figure 23. Turn–On Time
I C , COLLECTOR CURRENT (mA)
Figure 22. Charge Data
REVERSE BIAS VOLTAGE (VOLTS)
Figure 21. Capacitance
CAPACITANCE (pF)
Q, CHARGE (pC)
TIME (ns)
t f , FALL TIME (ns)
V
CC
= 40 V
I
C
/I
B
= 10 Q
T
Q
A
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
I
C
/I
B
= 20
I
C
/I
B
= 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
10.0
7.0
5.0
3.0
2.0
1.0
5000
3000
2000
1000
700
500
300
200
100
70
50
T
J
= 25°C
T
J
= 125°C
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
51.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
C
obo
NPN MMBT3904WT1 PNP MMBT3906WT1
LESHAN RADIO COMPANY, LTD.
K3–8/9
MMBT3906WT1
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V CE = –5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)
SOURCE RESISTANCE= 200Ω
I
C
= 1.0 mA
f, FREQUENCY (kHz)
Figure 25
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 0.5 mA
SOURCE RESISTANCE =2.0kΩ
I
C
= 50 µA
SOURCE RESISTANCE= 2.0kΩ
I
C
= 100 µA
SOURCE RESISTANCE= 200 Ω
I
C
= 0.5 mA
MMBT3906WT1
I
C
= 1.0 mA
I
C
= 100 µA
I
C
= 50 µA
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
5.0
4.0
3.0
2.0
1.0
0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
14
12
10
8
6
4
2
0
MMBT3906WT1
MMBT3906WT1 MMBT3906WT1
MMBT3906WT1
MMBT3906WT1
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
I C , COLLECTOR CURRENT (mA)
Figure 27. Current Gain I C , COLLECTOR CURRENT (mA)
Figure 28. Output Admittance
I C , COLLECTOR CURRENT (mA)
Figure 29. Input Impedance I C , COLLECTOR CURRENT (mA)
Figure 30. Voltage Feedback Ratio
h fe, CURRENT GAIN
h oe , OUTPUT ADMITTANCE ( µmhos)
h ie, INPUT IMPEDANCE (kΩ)
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
300
200
100
70
50
30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 10
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20
10
5.0
2.0
1.0
0.5
0.2
100
70
50
30
20
10
7.0
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
R S , SOURCE RESISTANCE (kΩ)
Figure 26
NPN MMBT3904WT1 PNP MMBT3906WT1
LESHAN RADIO COMPANY, LTD.
K3–9/9
MMBT3906WT1
STATIC CHARACTERISTICS
I B , BASE CURRENT (mA)
Figure 32. Collector Saturation Region
I C , COLLECTOR CURRENT (mA)
Figure 31. DC Current Gain
I C , COLLECTOR CURRENT (mA)
Figure 34. Temperature Coefficients
C , COLLECTOR CURRENT (mA)
Figure 33. “ON” Voltages
h FE , DC CURRENT GAIN (NORMALIZED)
V CE, COLLECT OR EMITTER VOLTAGE (VOLTS)
V, VOLTAGE ( VOLTS )
θ V, TEMPERATURE COEFFICIENT (mV/ °C)
I C=1.0 mA
T J = 25°C
+25°C TO +125°C
θ VC for V CE(sat)
MMBT3906WT1
T J = +125°C V CE = 1.0 V
+25°C
–55°C
10 mA
T J = 25°C
30 mA 100 mA
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V –55°C TO +25°C
+25°C TO +125°C
–55°C TO +25°C
θ VB for V BE(sat)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
20
10
0.7
0.5
0.3
0.2
0.1
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0
0.8
0.6
0.4
0.2
0
1.0 2.0 5.0 10 20 50 100 200
1.2
1.0
0.8
0.6
0.4
0.2
00 20 40 60 80 100 120 140 160 180 200
1.0
0.5
0
– 0.5
–1.0
–1.5
–2.0
MMBT3906WT1
MMBT3906WT1 MMBT3906WT1
NPN MMBT3904WT1 PNP MMBT3906WT1
