PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Device Package Reel Size Tape width Quantity
S72 2N7002K SOT-23 Ø180mm 8 mm 3000 units
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID 0.3
A
ID (70°C ) 0.26
IDM 0.8 A
Maximum Power Dissipation PD 0.43 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 350
Parameter Symbol Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 V
FEATURES
●
●High Power and Current Handling Capability
●Lead Free
●Surface Mount Package
Schematic Diagram
Marking and Pin Assignment
SOT-23 Top View
A
PPLICATIONS
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps
Hammers, Display, Memories, Transistors etc
●Battery Operated Systems
●Solid-State Relays
2N7002K
60V N-Channel MOSFET
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°C
°C/W
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
VDS=60V, ID=0.3A
RDS(ON) < 3.5Ω @ VGS=5V
RDS(ON) < 3Ω @ VGS=10V
ESD Rating: 1000V HBM
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA
Gate-Body Leakage Current IGSS
VGS=±5V,VDS=0V 100 nA
VGS=±10V,VDS=0V 150 nA
VGS=±20V,VDS=0V 10 uA
Gate-Source Breakdown Voltage BVGSO VDS=0V, IG=±250uA ±20 V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 2.5 V
Drain-Source On-State Resistance RDS(ON)
VGS=10V, ID=0.5A 3
Ω
VGS=5V, ID=0.05A 3.5
Forward Transconductance gFS VDS=10V,ID=0.2A 0.08 S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance Clss
VDS=25V,VGS=0V,
F=1.0MHz
30 PF
Output Capacitance Coss 6 PF
Reverse Transfer Capacitance Crss 3 PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time td(on) VDD=30V,VGS=10V,
RGEN=10Ω，RL=150Ω
ID=0.2A
25 nS
Turn-Off Delay Time td(off) 35 nS
Total Gate Charge Qg VDS=10V,ID=0.25A,VGS=4.5V 0.4 0.6 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.2A 1.3 V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
2N7002K
60V N-Channel MOSFET
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V g s R gen
V in
G
V d d
Rl
V o ut
S
D
Figure 1. Switching Test Circuit
VIN
VOUT
10%
10%
50% 50%
INVERTED
td(on)
90%
tr
ton
90%
10%
toff
td(off) tf
90%
VIN
VOUT
10%
10%
50% 50%
INVERTED
td(on)
90%90%
tr
ton
90%
10%
toff
td(off) tf
90%
TJ-Junction Temperature(°C)
Figure 3. Power Dissipation
PD Power(W)
TJ-Junction Temperature(°C)
Figure 4. Drain Current
ID- Drain Current (A）
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5. Output Characteristics
ID- Drain Current (A)
Figure 6. Drain-Source On-Resistance
Rdson On-Resistance(Ω )
2N7002K
60V N-Channel MOSFET
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PUPULSE WILSE WIDTDTHH
Figure 2. Switching Waveforms
TJ-Junction Temperature(°C)
Figure 8. Drain-Source On-Resistance
Normalized On-Resistance
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 7. Transfer Characteristics
Vgs Gate-Source Voltage (V)
Figure 9. Rdson vs Vgs
Rdson On-Resistance(Ω )
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11. Gate Charge
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 10. Capacitance vs Vds
Vsd Source-Drain Voltage (V)
Figure 12. Source- Drain Diode Forward
Is- Reverse Drain Current (A)
2N7002K
60V N-Channel MOSFET
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r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14. Normalized Maximum Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Figure 13. Safe Operation Area
ID- Drain Current (A)
2N7002K
60V N-Channel MOSFET
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SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm)
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified.
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Symbol
Dimensions in Millimeters
MIN.
MAX.
A
0.900
1.150
A1
0.000
0.100
A2
0.900
1.050
b
0.300
0.500
c
0.080
0.150
D
2.800
3.000
E
1.200
1.400
E1
2.250
2.550
e
0.950TYP
e1
1.800
2.000
L
0.550REF
L1
0.300
0.500
θ
0°
8°
2N7002K
60V N-Channel MOSFET
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Doc.US2N7002KxSN3.5
Apr.2019
www.goodarksemi.com
