2N7002K 60V N-Channel MOSFET FEATURES VDS=60V, ID=0.3A RDS(ON) < 3.5 @ VGS=5V RDS(ON) < 3 @ VGS=10V ESD Rating: 1000V HBM High Power and Current Handling Capability Lead Free Surface Mount Package Schematic Diagram APPLICATIONS Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps Hammers, Display, Memories, Transistors etc Battery Operated Systems Solid-State Relays Marking and Pin Assignment SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size S72 2N7002K SOT-23 Tape width Quantity 8 mm 3000 units O180mm ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V ID 0.3 ID (70C ) 0.26 IDM 0.8 A PD 0.43 W TJ,TSTG -55 To 175 C RJA 350 C/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range A THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) Parameter Symbol Condition Min BVDSS VGS=0V ID=250A 60 Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage 1/6 V 2N7002K 60V N-Channel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate-Source Breakdown Voltage IDSS IGSS VDS=60V,VGS=0V 1 A VGS=5V,VDS=0V 100 nA VGS=10V,VDS=0V 150 nA VGS=20V,VDS=0V 10 uA BVGSO VDS=0V, IG=250uA 20 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A 1 Drain-Source On-State Resistance RDS(ON) V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 2.5 VGS=10V, ID=0.5A 3 VGS=5V, ID=0.05A 3.5 VDS=10V,ID=0.2A 0.08 V S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz 30 PF 6 PF 3 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-Off Delay Time td(off) VDD=30V,VGS=10V, RGEN=10RL=150 ID=0.2A Qg VDS=10V,ID=0.25A,VGS=4.5V VSD VGS=0V,IS=0.2A Total Gate Charge 0.4 25 nS 35 nS 0.6 nC 1.3 V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. 2/6 2N7002K 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs R gen td(on) Rl Vin D ton tr Vout 90% VOUT G S toff tf td(off) 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PU PULSE LSE WIDT WIDTH H Figure 1. Switching Test Circuit PD Power(W) ID- Drain Current (A Figure 2. Switching Waveforms TJ-Junction Temperature(C) TJ-Junction Temperature(C) Figure 3. Power Dissipation ID- Drain Current (A) Rdson On-Resistance( ) Figure 4. Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5. Output Characteristics Figure 6. Drain-Source On-Resistance 3/6 2N7002K ID- Drain Current (A) Normalized On-Resistance 60V N-Channel MOSFET Vgs Gate-Source Voltage (V) TJ-Junction Temperature(C) Figure 8. Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance( ) Figure 7. Transfer Characteristics Vds Drain-Source Voltage (V) Figure 9. Rdson vs Vgs Figure 10. Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11. Gate Charge Figure 12. Source- Drain Diode Forward 4/6 2N7002K ID- Drain Current (A) 60V N-Channel MOSFET Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13. Safe Operation Area Square Wave Pluse Duration(sec) Figure 14. Normalized Maximum Transient Thermal Impedance 5/6 2N7002K 60V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0 8 NOTES 1. All dimensions are in millimeters. 2. Tolerance 0.10mm (4 mil) unless otherwise specified. 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodarksemi.com 6/6 Doc.US2N7002KxSN3.5 Apr.2019