UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R206-010,A
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
V
CEO=160V
*High current gain
APPLICATIONS
*Telephone switching circuit
*Amplifier
MARKING
SOT-23
1
2
3
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS SYMBOL RATING UNIT
Collector-base voltage VCBO 180 V
Collector-emitter voltage VCEO 160 V
Emitter-base voltage VEBO 6 V
Collector dissipation Pc 350 mW
Collector current Ic 600 mA
Junction Temperature Tj 150
°C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-base breakdown voltage BVCBO Ic=100µA,IE=0 180 V
Collector-emitter breakdown voltage BVCEO Ic=1mA,IB=0 160 V
Emitter-base breakdown voltage BVEBO IE=10µA,Ic=0 6 V
Collector cut-off current ICBO VCB=120V,IE=0 50 nA
Emitter cut-off current IEBO VBE=4V,Ic=0 50 nA
DC current gain(note) hFE VCE=5V,Ic=1mA
VCE=5V,Ic=10mA
VCE=5V,Ic=50mA
80
80
80
160
400
Collector-emitter saturation voltage VCE(sat) Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
0.15
0.2
V
Base-emitter saturation voltage VBE(sat) Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
1
1
V
Current gain bandwidth product fT VCE=10V,Ic=10mA,f=100MHz 100 300 MHz
G1
UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R206-010,A
(continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Output capacitance Cob VCB=10V,IE=0
f=1MHz
6.0 pF
Noise Figure NF Ic=0.25mA,VCE=5V
Rs=1kΩ,f=10Hz to 15.7kHz
8 dB
Note:Pulse test:PW<300µs,Duty Cycle<2%
TYPICAL CHARACTERISTIC CURVES
Fig.2 DC current Gain
Ic,Collector current (mA)
hFE, DC current Gain
102
101
100
103
103
102
101
100
10
-1
V
CE
=5V
Fig.3 Base-Emitter on Voltage
100
101
102
Ic,Collector current (mA)
Base-Emitter voltage (V)
0 0.2 0.4 0.6 0.8 1.0
V
CE
=5V
Ic,Collector current (mA)
103
102
101
100
10
-1
Saturation voltage (V)
Fig.4 Saturation voltage Fig.5 Current gain-bandwidth
product
Fig.1 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
100101102
103
Current Gain-bandwidth
product,fT(MHz)
100
101
102
V
CE
=10V
Collector-Base voltage (V)
Cob,Capacitance (pF)
103
100101102
0
2
4
6
8
10
f=1MHz
I
E
=0
103
101
100
10
-1
10
-2
