UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNIT VCBO VCEO VEBO Pc Ic Tj TSTG 180 160 6 350 600 150 -55 ~ +150 V V V mW mA C C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note) BVCBO BVCEO BVEBO ICBO IEBO hFE Ic=100A,IE=0 Ic=1mA,IB=0 IE=10A,Ic=0 VCB=120V,IE=0 VBE=4V,Ic=0 VCE=5V,Ic=1mA VCE=5V,Ic=10mA VCE=5V,Ic=50mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA VCE=10V,Ic=10mA,f=100MHz 180 160 6 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Current gain bandwidth product fT UTC UNISONIC TECHNOLOGIES 80 80 80 100 TYP 160 MAX UNIT 50 50 V V V nA nA 400 0.15 0.2 1 1 300 CO., LTD. V V MHz 1 QW-R206-010,A UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR (continued) PARAMETER SYMBOL TEST CONDITIONS Output capacitance Cob Noise Figure NF VCB=10V,IE=0 f=1MHz Ic=0.25mA,VCE=5V Rs=1k,f=10Hz to 15.7kHz MIN TYP MAX UNIT 6.0 pF 8 dB Note:Pulse test:PW<300s,Duty Cycle<2% TYPICAL CHARACTERISTIC CURVES Fig.1 Collector output Capacitance Fig.2 DC current Gain 6 4 0 10 1 10 2 10 1 10 0 10 0 2 10 -1 10 0 10 1 10 2 10 3 10 Collector-Base voltage (V) Ic,Collector current (mA) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product VCE=5V 2 10 1 10 0 10 0 0.2 0.4 0.6 0.8 1.0 Base-Emitter voltage (V) 3 10 1 10 Current Gain-bandwidth product,f T(MHz) Ic=10*IB VBE(sat) 0 10 -1 10 VCE(sat) -2 10 Ic,Collector current (mA) f=1MHz IE=0 hFE, DC current Gain Cob,Capacitance (pF) 3 10 VCE=5V 8 2 Saturation voltage (V) Fig.3 Base-Emitter on Voltage 3 10 10 -1 10 0 10 1 10 2 10 Ic,Collector current (mA) UTC 3 10 VCE=10V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 Ic,Collector current (mA) UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R206-010,A