2N5551 / MMBT5551 NPN General Purpose Amplifier Features * This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. * Suffix "-C" means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) * Suffix "-Y" means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V Collector current - Continuous 600 mA -55 to +150 C IC TJ, Tstg Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25C unless otherwise noted Symbol Max Parameter 2N5551 *MMBT5551 Total Device Dissipation Derate above 25C 625 5.0 350 2.8 RJC Thermal Resistance, Junction to Case 83.3 RJA Thermal Resistance, Junction to Ambient 200 PD Units mW mW/C C/W 357 C/W * Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06." (c) 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev. B1 www.fairchildsemi.com 1 2N5551 / MMBT5551 -- NPN General Purpose Amplifier June 2009 Symbol TA = 25C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 160 V V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC = 100A, IE = 0 180 V IE = 10uA, IC = 0 6.0 V ICBO Collector Cutoff Current VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C 50 50 nA A IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA On Characteristics hFE DC Current Gain IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V 80 80 30 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.15 0.20 V V VBE(sat) Base-Emitter On Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 1.0 1.0 V V Small Signal Characteristics Current Gain Bandwidth Product IC = 10mA, VCE = 10V, f = 100MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 6.0 pF Cibo Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 20 pF Hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0kHz NF Noise Figure IC = 250 uA, VCE= 5.0 V, RS=1.0 k, f=10 Hz to 15.7 kHz fT 100 50 MHz 250 8.0 dB Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) (c) 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev. B1 www.fairchildsemi.com 2 2N5551 / MMBT5551 -- NPN General Purpose Amplifier Electrical Characteristics o 125 C VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V] 250 VCE=5V o 100 C 200 hFE- DC CURRENT GAIN o 75 C 150 o 25 C 100 o -40 C 50 0 1 10 100 1000 ? 10 10 1 o 0.1 o 75 C o 25 C o -40 C 0.01 1 10 100 IC- COLLECTOR CURRENT [mA] IC- COLLECTOR CURRENT [mA] Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1.0 1.2 VBE(ON)- BASE-EMITTER VOLTAGE [V] VBE(SAT)- BASE-EMITTER VOLTAGE [V] 125 C o 100 C o -40 C 0.8 o 25 C 0.6 o 125 C o 100 C o 75 C 0.4 0.2 o TA = -40 C 1.0 o TA = 25 C 0.8 o 0.6 TA = 75 C o 0.4 TA = 100 C o TA = 125 C 0.2 0.0 1 10 100 1 10 IC- COLLECTOR CURRENT [mA] 100 1000 IC- COLLECTOR CURRENT [mA] Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current 50 VCB = 100V CAPACITANCE [pF] I CBO- COLLE CTOR CURRENT (nA) 100 10 10 CIB COB 1 25 1 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 0 125 1 2 3 4 5 6 7 8 9 10 REVERSE BIAS VOLTAGE [V] Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Input and Output Capacitance vs Reverse Voltage (c) 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev. B1 www.fairchildsemi.com 3 2N5551 / MMBT5551 -- NPN General Purpose Amplifier Typical Performance Characteristics h FE - SMALL SIGNAL CURRENT GAIN BV CER - BREAKDOWN VOLTAGE (V) Between Emitter-Base 260 I C = 1.0 mA 240 220 200 180 160 0.1 1 10 100 1000 RESISTANCE (k ) Figure 7. Collector- Emitter Breakdown Voltage with Resistance Between Emitter-Base vs Collector Current 16 FREG = 20 MHz V CE = 10V 12 8 4 0 1 10 I C - COLLECTOR CURRENT (mA) 50 Figure 8. Small Signal Current Gain vs Collector Current PD - POWER DISSIPATION (mW) 700 600 500 TO-92 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 7. Power Dissipation vs Ambient Temperature (c) 2009 Fairchild Semiconductor Corporation 2N5551 / MMBT5551 Rev. B1 www.fairchildsemi.com 4 2N5551 / MMBT5551 -- NPN General Purpose Amplifier Typical Performance Characteristics (Continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM* (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) (R) FAST FastvCore FETBench FlashWriter(R)* FPS F-PFS FRFET(R) SM Global Power Resource Green FPS Green FPS e-Series GmaxTM GTO IntelliMAX ISOPLANAR MegaBuckTM MICROCOUPLER MicroFET MicroPak MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPM PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART START SPM(R) STEALTHTM SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOSTM SyncFETTM Sync-LockTM (R) * The Power Franchise(R) TinyBoost TinyBuck TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT* PSerDes UHC(R) Ultra FRFET UniFET VCX VisualMax XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com