November 2011 Doc ID 18467 Rev 2 1/19
19
STD10NM60ND, STF10NM60ND
STP10NM60ND
N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220
FDmesh™ II Power MOSFET (with fast diode)
Features
■100% avalanche tested
■Low input capacitance and gate charge
■Low gate input resistance
■Extremely high dv/dt avalanche capabilities
Applications
■Switching applications
Description
This FDmesh™ II Power MOSFET with intrinsic
fast-recovery body diode is produced using the
second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low on-
resistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.
Figure 1. Internal schematic diagram
Order codes VDSS
@TJmax
RDS(on)
max. IDPTOT
STD10NM60ND
650 V < 0.6 Ω8 A
70 W
STF10NM60ND 25 W
STP10NM60ND 70 W
TO-220
TO-220FP
12
3
DPAK
1
3
TAB
123
TAB
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3
Table 1. Device summary
Order codes Marking Package Packaging
STD10NM60ND
10NM60ND
DPAK Tape and reel
STF10NM60ND TO-220FP Tu b e
STP10NM60ND TO-220
www.st.com
Contents STD10NM60ND, STF10NM60ND, STP10NM60ND
2/19 Doc ID 18467 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STD10NM60ND, STF10NM60ND, STP10NM60ND Electrical ratings
Doc ID 18467 Rev 2 3/19
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK TO-220FP TO-220
VDS Drain-source voltage 600 V
VGS Gate- source voltage ± 25 V
IDDrain current (continuous) at TC = 25 °C 8 8 (1)
1. Limited by maximum junction temperature.
8A
IDDrain current (continuous) at TC = 100 °C 5 5 (1) 5A
IDM (2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 32 32 (1) 32 A
PTOT Total dissipation at TC = 25 °C 70 25 70 W
dv/dt(3)
3. ISD ≤ 8 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope 40 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500 V
TJ
Tstg
Operating junction temperature
Storage temperature - 55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
DPAK TO-220FP TO-220
Rthj-case Thermal resistance junction-case max 1.79 5 1.79 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.50 62.50 °C/W
Rthj-pcb Thermal resistance junction-pcb max 50 °C/W
TJ
Maximum lead temperature for soldering
purpose 300 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max) 2.5 A
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAS, VDD=50 V) 130 mJ
Electrical characteristics STD10NM60ND, STF10NM60ND, STP10NM60ND
4/19 Doc ID 18467 Rev 2
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA 600 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, TC =125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 25 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 4 A 0.57 0.6 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0 -
577
32.4
1.76
-
pF
pF
pF
Coss eq(1)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 480 V, VGS = 0 - 138 - pF
RgGate input resistance f=1 MHz open drain - 6 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 8 A,
VGS = 10 V
(see Figure 19)
-
20
4.3
11.6
-
nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
-
9.2
10
32
9.8
-
ns
ns
ns
ns
STD10NM60ND, STF10NM60ND, STP10NM60ND Electrical characteristics
Doc ID 18467 Rev 2 5/19
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed) -8
32
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 8 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
-
118
680
11
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 20)
-
150
918
12
ns
nC
A
Electrical characteristics STD10NM60ND, STF10NM60ND, STP10NM60ND
6/19 Doc ID 18467 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220
I
D
10
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM08975v1
I
D
10
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM08986v1
I
D
10
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM08974v1
STD10NM60ND, STF10NM60ND, STP10NM60ND Electrical characteristics
Doc ID 18467 Rev 2 7/19
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations Figure 13. Output capacitance stored energy
I
D
6
4
2
0010 V
DS
(V)
20
(A)
515 25
8
10
5V
6V
7V
V
GS
=10V
30
12
14
AM08976v1
I
D
6
4
2
004V
GS
(V)
8
(A)
2610
8
10
V
DS
=19V
12
14
AM08977v1
V
GS
6
4
2
005Q
g
(nC)
(V)
20
8
10 15
10
V
DD
=480V
I
D
=8A
12
300
200
100
0
400
500
V
DS
AM08978v1
R
DS(on)
0.56
0.55
0.54
0.53
02I
D
(A)
(Ω)
13
0.57
0.58
0.59
0.60 V
GS
=10V
5
4678
AM08979v1
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
AM08980v1
E
oss
3
2
1
0
0100 V
DS
(V)
(µJ)
400
4
200 300 500 600
AM08981v1
Electrical characteristics STD10NM60ND, STF10NM60ND, STP10NM60ND
8/19 Doc ID 18467 Rev 2
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized VDS vs temperature
V
GS(th)
1.00
0.90
0.80
0.70
-50 0T
J
(°C)
(norm)
-25
1.10
75
25 50 100
I
D
=250µA
AM08982v1
R
DS(on)
1.7
1.3
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
2.1
1.9
1.5
1.1
0.7
I
D
= 4 A
AM08983v1
V
SD
04I
SD
(A)
(V)
268
0
0.2
0.4
0.6
0.8
1.0
1.2 T
J
=-50°C
T
J
=150°C
T
J
=25°C
AM08985v1
V
DS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
I
D
=1mA
1.08
1.10
AM09028v1
STD10NM60ND, STF10NM60ND, STP10NM60ND Test circuits
Doc ID 18467 Rev 2 9/19
3 Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STD10NM60ND, STF10NM60ND, STP10NM60ND
10/19 Doc ID 18467 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STD10NM60ND, STF10NM60ND, STP10NM60ND Package mechanical data
Doc ID 18467 Rev 2 11/19
Table 9. DPAK (TO-252) mechanical data
Dim.
mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0° 8°
Package mechanical data STD10NM60ND, STF10NM60ND, STP10NM60ND
12/19 Doc ID 18467 Rev 2
Figure 24. DPAK (TO-252) drawing
Figure 25. DPAK footprint(a)
a. All dimension are in millimeters
0068772_H
6.7
1.6
1.6
2.3
2.3
6.7 1.83
AM08850v1
STD10NM60ND, STF10NM60ND, STP10NM60ND Package mechanical data
Doc ID 18467 Rev 2 13/19
Figure 26. TO-220FP drawing
Table 10. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
Package mechanical data STD10NM60ND, STF10NM60ND, STP10NM60ND
14/19 Doc ID 18467 Rev 2
.
Table 11. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
STD10NM60ND, STF10NM60ND, STP10NM60ND Package mechanical data
Doc ID 18467 Rev 2 15/19
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Packaging mechanical data STD10NM60ND, STF10NM60ND, STP10NM60ND
16/19 Doc ID 18467 Rev 2
5 Packaging mechanical data
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D1.5 1.6D20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
STD10NM60ND, STF10NM60ND, STP10NM60ND Packaging mechanical data
Doc ID 18467 Rev 2 17/19
Figure 28. Tape for DPAK (TO-252)
Figure 29. Reel for DPAK (TO-252)
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STD10NM60ND, STF10NM60ND, STP10NM60ND
18/19 Doc ID 18467 Rev 2
6 Revision history
12
Table 13. Document revision history
Date Revision Changes
10-Feb-2011 1 First release.
17-Nov-2011 2
Updated features in table and description in cover page.
Updated Table 2: Absolute maximum ratings, Table 5: On /off states,
Table 15: Normalized on resistance vs temperature, Figure 17:
Normalized VDS vs temperature and Section 4: Package mechanical
data.
STD10NM60ND, STF10NM60ND, STP10NM60ND
Doc ID 18467 Rev 2 19/19
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