STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 , 8 A, DPAK, TO-220FP, TO-220 FDmeshTM II Power MOSFET (with fast diode) Features Order codes VDSS @TJmax RDS(on) max. PTOT ID STD10NM60ND STF10NM60ND TAB 3 70 W 650 V < 0.6 8A 1 3 25 W STP10NM60ND 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt avalanche capabilities TO-220FP DPAK 70 W 2 TAB 3 1 2 TO-220 Applications Figure 1. Switching applications Internal schematic diagram Description $ 4!" This FDmeshTM II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmeshTM technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STD10NM60ND STF10NM60ND 10NM60ND TO-220FP Tube STP10NM60ND November 2011 TO-220 Doc ID 18467 Rev 2 1/19 www.st.com 19 Contents STD10NM60ND, STF10NM60ND, STP10NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 Doc ID 18467 Rev 2 STD10NM60ND, STF10NM60ND, STP10NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP TO-220 VDS Drain-source voltage 600 V VGS Gate- source voltage 25 V ID ID IDM (2) PTOT dv/dt(3) Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C 8 8 (1) 8 A 5 5 (1) 5 A 32 A 70 W Drain current (pulsed) 32 Total dissipation at TC = 25 C 70 32 (1) 25 Peak diode recovery voltage slope 40 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) 2500 TJ Tstg Operating junction temperature Storage temperature V - 55 to 150 C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD 8 A, di/dt 400 A/s, VDS peak V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit DPAK TO-220FP TO-220 5 1.79 Rthj-case Thermal resistance junction-case max 1.79 Rthj-amb Thermal resistance junction-ambient max 62.50 Rthj-pcb Thermal resistance junction-pcb max TJ Table 4. Symbol 62.50 50 C/W C/W C/W Maximum lead temperature for soldering purpose 300 C/W Avalanche characteristics Parameter Value Unit IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max) 2.5 A EAS Single pulse avalanche energy (starting TJ=25 C, ID=IAS, VDD=50 V) 130 mJ Doc ID 18467 Rev 2 3/19 Electrical characteristics 2 STD10NM60ND, STF10NM60ND, STP10NM60ND Electrical characteristics (Tcase =25 C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 600 V IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC =125 C 1 100 A A IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.57 0.6 Min. Typ. Max. Unit - pF pF pF VGS = 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source on resistance Table 6. Symbol 3 VGS = 10 V, ID = 4 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 577 32.4 1.76 Equivalent capacitance time related VDS = 0 to 480 V, VGS = 0 - 138 - pF Rg Gate input resistance f=1 MHz open drain - 6 - Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 8 A, VGS = 10 V (see Figure 19) - 20 4.3 11.6 - nC nC nC Ciss Coss Crss Coss eq(1) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol Parameter td(on) tr td(off) tf 4/19 Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 300 V, ID = 4 A, RG = 4.7 , VGS = 10 V (see Figure 18) Doc ID 18467 Rev 2 Min. Typ. - 9.2 10 32 9.8 Max Unit - ns ns ns ns STD10NM60ND, STF10NM60ND, STP10NM60ND Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Max Unit - 8 32 A A 1.5 V Forward on voltage ISD = 8 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/s VDD= 60 V (see Figure 20) - 118 680 11 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/s VDD= 60 V TJ = 150 C (see Figure 20) - 150 918 12 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Doc ID 18467 Rev 2 5/19 Electrical characteristics STD10NM60ND, STF10NM60ND, STP10NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK 1 Thermal impedance for DPAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-220 AM08975v1 ID (A) 10 Figure 3. Tj=150C Tc=25C Single pulse is ea ) ar S(on is D th R x in n ma o y ti ra d b e e p O imit L 10s 100s 1ms 10ms 0.1 0.01 0.1 Figure 4. 10 1 100 Safe operating area for TO-220FP AM08986v1 ID (A) 10 Tj=150C Tc=25C Single pulse is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L 10s s hi 1 100s 1ms 10ms 0.1 0.01 0.1 Figure 6. 1 10 100 1 VDS(V) Safe operating area for TO-220 AM08974v1 ID (A) 10 VDS(V) Tj=150C Tc=25C Single pulse is ea ) ar S(on is D th R in ax n m tio by ra pe ed O imit L 10s 100s 1ms 10ms 0.1 0.01 0.1 6/19 1 10 100 VDS(V) Doc ID 18467 Rev 2 STD10NM60ND, STF10NM60ND, STP10NM60ND Figure 8. Output characteristics Figure 9. AM08976v1 ID (A) Transfer characteristics AM08977v1 ID (A) VDS=19V VGS=10V 14 Electrical characteristics 14 12 12 7V 10 10 8 8 6 6 4 4 6V 2 2 5V 0 0 5 Figure 10. 10 20 15 30 25 2 4 8 6 VGS(V) 10 Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM08978v1 VGS (V) VDD=480V 12 500 ID=8A VDS 10 0 0 VDS(V) AM08979v1 RDS(on) () 0.60 VGS=10V 0.59 400 0.58 8 300 6 0.57 0.56 200 4 0.55 100 2 0 0 10 5 15 20 0 Qg(nC) Figure 12. Capacitance variations 0.53 0 1 2 3 4 5 6 7 8 ID(A) Figure 13. Output capacitance stored energy AM08980v1 C (pF) 0.54 AM08981v1 Eoss (J) 4 1000 Ciss 3 100 2 Coss 10 1 1 0.1 Crss 1 10 100 VDS(V) Doc ID 18467 Rev 2 0 0 100 200 300 400 500 600 VDS(V) 7/19 Electrical characteristics STD10NM60ND, STF10NM60ND, STP10NM60ND Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature AM08982v1 VGS(th) (norm) AM08983v1 RDS(on) (norm) 2.1 ID=250A 1.10 ID = 4 A 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 TJ(C) 75 100 Figure 16. Source-drain diode forward characteristics 0 25 TJ(C) AM09028v1 ID=1mA 1.10 TJ=-50C TJ=25C 1.0 75 100 VDS (norm) 1.2 50 Figure 17. Normalized VDS vs temperature AM08985v1 VSD (V) 0.5 -50 -25 1.08 1.06 1.04 0.8 1.02 0.6 1.00 TJ=150C 0.98 0.4 0.96 0.2 0 0 8/19 2 4 6 8 ISD(A) 0.94 0.92 -50 -25 Doc ID 18467 Rev 2 0 25 50 75 100 TJ(C) STD10NM60ND, STF10NM60ND, STP10NM60ND 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 18467 Rev 2 10% AM01473v1 9/19 Package mechanical data 4 STD10NM60ND, STF10NM60ND, STP10NM60ND Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/19 Doc ID 18467 Rev 2 STD10NM60ND, STF10NM60ND, STP10NM60ND Table 9. Package mechanical data DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R V2 0.20 0 8 Doc ID 18467 Rev 2 11/19 Package mechanical data STD10NM60ND, STF10NM60ND, STP10NM60ND Figure 24. DPAK (TO-252) drawing 0068772_H Figure 25. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 a. All dimension are in millimeters 12/19 Doc ID 18467 Rev 2 AM08850v1 STD10NM60ND, STF10NM60ND, STP10NM60ND Table 10. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 26. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 18467 Rev 2 13/19 Package mechanical data . Table 11. STD10NM60ND, STF10NM60ND, STP10NM60ND TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 Doc ID 18467 Rev 2 STD10NM60ND, STF10NM60ND, STP10NM60ND Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 18467 Rev 2 15/19 Packaging mechanical data 5 STD10NM60ND, STF10NM60ND, STP10NM60ND Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 16/19 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 18467 Rev 2 18.4 22.4 STD10NM60ND, STF10NM60ND, STP10NM60ND Packaging mechanical data Figure 28. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 29. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 18467 Rev 2 17/19 Revision history 6 STD10NM60ND, STF10NM60ND, STP10NM60ND Revision history 12 Table 13. Document revision history Date Revision 10-Feb-2011 1 First release. 2 Updated features in table and description in cover page. Updated Table 2: Absolute maximum ratings, Table 5: On /off states, Table 15: Normalized on resistance vs temperature, Figure 17: Normalized VDS vs temperature and Section 4: Package mechanical data. 17-Nov-2011 18/19 Changes Doc ID 18467 Rev 2 STD10NM60ND, STF10NM60ND, STP10NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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