/TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 EconoDUALTM3/IGBT4HE pressfitNTC EconoDUALTM3modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandPressFIT/NTC /PreliminaryData VCES = 1200V IC nom = 450A / ICRM = 900A * * * UPS * TypicalApplications * MotorDrives * ServoDrives * UPSSystems * WindTurbines * VCEsat * Tvjop=150C ElectricalFeatures * LowVCEsat * Tvjop=150C * PressFIT * MechanicalFeatures * PressFITContactTechnology * StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 /TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1200 V ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C TC = 25C, Tvj max = 175C IC nom IC 450 675 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 900 A Totalpowerdissipation TC = 25C, Tvj max = 175C Ptot 2250 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues Collector-emittersaturationvoltage min. IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C Gatethresholdvoltage IC = 17,0 mA, VCE = VGE, Tvj = 25C Gatecharge VCE sat A A typ. max. 1,75 2,00 2,05 2,10 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 3,30 C Internalgateresistor Tvj = 25C RGint 1,7 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 28,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,55 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 3,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA td on 0,19 0,22 0,22 s s s tr 0,06 0,07 0,07 s s s td off 0,49 0,58 0,62 s s s tf 0,08 0,11 0,12 s s s () Turn-ondelaytime,inductiveload IC = 450 A, VCE = 600 V VGE = 15 V RGon = 1,3 Tvj = 25C Tvj = 125C Tvj = 150C () Risetime,inductiveload IC = 450 A, VCE = 600 V VGE = 15 V RGon = 1,3 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-offdelaytime,inductiveload IC = 450 A, VCE = 600 V VGE = 15 V RGoff = 1,3 Tvj = 25C Tvj = 125C Tvj = 150C () Falltime,inductiveload IC = 450 A, VCE = 600 V VGE = 15 V RGoff = 1,3 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-onenergylossperpulse IC = 450 A, VCE = 600 V, LS = 35 nH Tvj = 25C VGE = 15 V, di/dt = 7000 A/s (Tvj = 150C) Tvj = 125C RGon = 1,3 Tvj = 150C Eon 15,0 26,0 28,5 mJ mJ mJ ( Turn-offenergylossperpulse IC = 450 A, VCE = 600 V, LS = 35 nH Tvj = 25C VGE = 15 V, du/dt = 3100 V/s (Tvj = 150C) Tvj = 125C RGoff = 1,3 Tvj = 150C Eoff 38,0 55,5 61,5 mJ mJ mJ SCdata VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,03 Temperatureunderswitchingconditions Tvj op -40 preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 2 tP 10 s, Tvj = 150C 1800 A 0,066 K/W K/W 150 C /TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1200 V IF 450 A IFRM 900 A It 35000 28500 /CharacteristicValues min. typ. max. 1,65 1,65 1,65 2,10 As As Forwardvoltage IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C VF Peakreverserecoverycurrent IF = 450 A, - diF/dt = 7000 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C IRM 450 550 575 A A A Recoveredcharge IF = 450 A, - diF/dt = 7000 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C Qr 48,0 92,0 105 C C C Reverserecoveryenergy IF = 450 A, - diF/dt = 7000 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C Erec 26,5 48,5 55,0 mJ mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,045 Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW V V V 0,10 K/W K/W C /NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specificationaccordingtothevalidapplicationnote. preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 3 /TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 2,5 kV Cu Al2O3 -/terminaltoheatsink -/terminaltoterminal 14,5 13,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 12,5 10,0 mm Comperativetrackingindex CTI > 200 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting min. typ. RthCH 0,009 LsCE 20 nH RCC'+EE' 1,10 m Tstg -40 125 C M5 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,0 - 6,0 Nm Weight G 345 g preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 4 max. K/W /TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 900 900 750 750 600 600 IC [A] IC [A] Tvj = 25C Tvj = 125C Tvj = 150C 450 450 300 300 150 150 0 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=1.3,RGoff=1.3,VCE=600V 900 140 Tvj = 25C Tvj = 125C Tvj = 150C Eon, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 125C Eoff, Tvj = 150C 120 750 100 600 E [mJ] IC [A] 80 450 60 300 40 150 0 20 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 5 0 150 300 450 IC [A] 600 750 900 /TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=450A,VCE=600V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 220 0,1 Eon, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 125C Eoff, Tvj = 150C 200 180 ZthJC : IGBT 160 ZthJC [K/W] E [mJ] 140 120 100 0,01 80 60 40 i: 1 2 3 4 ri[K/W]: 0,00396 0,02178 0,02112 0,01914 i[s]: 0,01 0,02 0,05 0,1 20 0 0 2 4 6 8 RG [] 10 12 14 0,001 0,001 16 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=1.3,Tvj=150C 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 1000 900 IC, Modul IC, Chip 900 Tvj = 25C Tvj = 125C Tvj = 150C 750 800 700 600 IF [A] IC [A] 600 500 450 400 300 300 200 150 100 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] /TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.3,VCE=600V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=450A,VCE=600V 80 70 Erec, Tvj = 125C Erec, Tvj = 150C 70 Erec, Tvj = 125C Erec, Tvj = 150C 60 60 50 50 E [mJ] E [mJ] 40 40 30 30 20 20 10 10 0 0 150 300 450 IF [A] 600 750 0 900 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 2 4 6 8 RG [] 10 12 14 16 140 160 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 100000 ZthJC : Diode Rtyp 10000 R[] ZthJC [K/W] 0,1 0,01 1000 i: 1 2 3 4 ri[K/W]: 0,006 0,033 0,032 0,029 i[s]: 0,01 0,02 0,05 0,1 0,001 0,001 0,01 0,1 t [s] 1 100 10 preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 7 0 20 40 60 80 100 TC [C] 120 /TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 PreliminaryData /circuit_diagram_headline /packageoutlines In fin e o n preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 8 /TechnicalInformation IGBT- IGBT-modules FF450R12ME4_B11 PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:MB dateofpublication:2013-11-05 approvedby:MK revision:2.0 9