MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Type Available (MMBT3906) Case Material: Molded Plastic, "Green" Molding Compound. Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 e3 PPAP Capable (Note 4) Weight: 0.008 grams (Approximate) UL Flammability Classification Rating 94V-0 C SOT23 B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product Status Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel MMBT3904-7-F Active AEC-Q101 K1N 7 8 3,000 MMBT3904Q-7-F Active Automotive K1N 7 8 3,000 MMBT3904Q-13-F Active Automotive K1N 13 8 10,000 MMBT3904-13-F Active AEC-Q101 K1N 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 K1N = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B 2015 C 2016 D 2017 E 2018 F Jan Feb Mar Apr May Jun Jul 1 2 3 4 5 6 7 MMBT3904 Document number: DS30036 Rev. 25 - 2 1 of 7 www.diodes.com 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D March 2017 (c) Diodes Incorporated MMBT3904 Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Value 60 40 6 200 Unit V V V mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RJA RJL TJ,TSTG Value 310 350 403 357 350 -55 to +150 Unit mW C/W C/W C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT3904 Document number: DS30036 Rev. 25 - 2 2 of 7 www.diodes.com March 2017 (c) Diodes Incorporated MMBT3904 Thermal Characteristics and Derating Information 400 Thermal Resistance (C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (C) 350 300 250 150 50 100 1k IC, COLLECTOR CURRENT (A) Max Power Dissipation (W) 1 10 Pulse Power Dissipation Document number: DS30036 Rev. 25 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Pw = 10ms 0.1 DC Pw = 100ms 0.01 T A = 25C Single Non-repetitive Pulse DUT mounted onto 1xMRP FR-4 board Pulse Width (s) MMBT3904 D=0.05 0 100 1 Single Pulse. T amb=25C 1 Single Pulse Transient Thermal Impedance 10 100m D=0.1 D=0.2 100 Derating Curve 0.1 10m D=0.5 200 0.001 0.1 3 of 7 www.diodes.com 1 10 100 V CE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5 Typical Collector Current vs. Collector-Emitter Voltage March 2017 (c) Diodes Incorporated MMBT3904 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cut-Off Current Base Cut-Off Current Emitter Base Cut-Off Current Collector-Base Cut-Off Current ON CHARACTERISTICS (Note 10) Symbol Min Max Unit BVCBO BVCEO BVEBO ICEX IBL IEBO ICBO 60 40 6.0 50 50 50 50 V V V nA nA nA nA hFE 40 70 100 60 30 300 Collector-Emitter Saturation Voltage VCE(SAT) 0.20 0.30 V Base-Emitter Saturation Voltage VBE(SAT) 0.65 0.85 0.95 V COBO CIBO hIE hRE hFE hOE 1.0 0.5 100 1.0 4.0 8.0 10 8.0 400 40 pF pF k x 10-4 S Current Gain-Bandwidth Product fT 300 MHz Noise Figure NF 5.0 dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time tD tR tS tF 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Note: Test Condition IC = 10A, IE = 0 IC = 10mA, IB = 0 IE = 10A, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V VEB = 6V VCB = 48V IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100A, RS = 1.0k f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(OFF) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT3904 Document number: DS30036 Rev. 25 - 2 4 of 7 www.diodes.com March 2017 (c) Diodes Incorporated MMBT3904 Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 0.1 0.01 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 15 IC I B = 10 1 CAPACITANCE (pF) V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 1 Typical DC Current Gain vs. Collector Current T A = -25C T A = 125C TA = 25C 1 10 100 1,000 IC , COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Saturation Voltage vs. Collector Current MMBT3904 Document number: DS30036 Rev. 25 - 2 5 T A = 75C 0.1 0.1 10 5 of 7 www.diodes.com 0 0.1 1 10 V R, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance Characteristics 100 March 2017 (c) Diodes Incorporated MMBT3904 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X MMBT3904 Document number: DS30036 Rev. 25 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com March 2017 (c) Diodes Incorporated MMBT3904 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2017, Diodes Incorporated www.diodes.com MMBT3904 Document number: DS30036 Rev. 25 - 2 7 of 7 www.diodes.com March 2017 (c) Diodes Incorporated