1 - 2© 2003 IXYS All rights reserved
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IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXBP 5N160 G
IXBH 5N160 G IC25 = 5.7 A
VCES = 1600 V
VCE(sat) = 4.9 V
tf= 70 ns
High Voltage
BIMOSFETTM
Monolithic Bipolar MOS Transistor
TO-247 AD (IXBH)
A = Anode, C = Cathode , TAB = Cathode
G
E
CC (TAB)
GCE
TO-220 AB (IXBP)
C (TAB)
IXYS reserves the right to change limits, test conditions and dimensions.
IGBT
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1 6 00 V
VGES ± 20 V
IC25 TC = 25°C 5.7 A
IC90 TC = 90°C 3.5 A
ICM VGE = 10/0 V; RG = 47 Ω; TVJ = 125°C 6 A
VCEK RBSOA, Clamped inductive load; L = 100 µH 0.8VCES
Ptot TC = 25°C 68 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 3 A; VGE = 15 V; TVJ = 25°C 4.9 7.2 V
TVJ = 125°C 5.6 V
VGE(th) IC = 0.3 mA; VGE = VCE 3.5 5.5 V
ICES VGE = 0 V; VCE = VCES; TVJ = 25°C 150 µA
VCE = 0.8VCES; TVJ = 125°C 50 µA
IGES VCE = 0 V; VGE = ± 20 V 100 nA
td(on) 140 ns
tr200 ns
td(off) 120 ns
tf70 ns
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 325 pF
QGon VCE = 600V; VGE = 10 V; IC = 3 A 26 nC
VF(reverse conduction); IF = 3 A 6 V
RthJC 1.85 K/W
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 3 A
VGE = 10/0 V; RG = 47 Ω
Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- MOSFET compatible control
10 V turn on gate voltage
- fast switching for high frequency
operation
- reverse conduction capability
• industry standard package
- TO-220AB
- TO-247AD
epoxy meets UL94V-0
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
G
C
E
Preliminary data sheet
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2 - 2© 2003 IXYS All rights reserved
321
IXBP 5N160 G
IXBH 5N160 G
Dimensions
Component
Symbol Conditions Maximum Ratings
TVJ -55...+150 °C
Tstg -55...+125 °C
MDmounting torque (TO-220) 0.6 Nm
(TO-247) 1.2 Nm
Symbol Conditions Characteristic Values
min. typ. max.
RthCH with heatsink compound 0.25 K/W
Weight (TO-220) 2 g
(TO-247) 6 g
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D* 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-247 AD
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
TO-220 AB
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