Features
1 of 18
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SZM-2066Z
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip
module package. This HBT amplifier is made with InGaP on GaAs device technology
and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a final or driver stage for 802.16 and
802.11b/g equipment in the 2.4GHz to 2.7GHz bands. It can run from a 3V to 5V
supply. The external output match and bias adjustability allows load line optimiza-
tion for other applications or over narrower bands. It features an output power
detector, on/off power control and high RF overdrive robust-
ness. A 20dB step attenuator feature can be utilized by switch-
ing the second stage Power up/down control.
Stage 1
Bias Stage 2
Bias Stage 3
Bias
RFIN RFOUT
Pow er
Detector
Vb ia s = 5 V
Pow er
Up/Dow n
Control
Vcc = 5V
P1dB= 33.5dBm at 5V
Three Stages of Gain:37dB
802.11g 54Mb/s Class AB Per-
formance
POUT=26dBm at 2.5% EVM, VCC
5V, 690mA
Active Bias with Adjustable Cur-
rent
On-Chip Output Power Detector
Low Thermal Resistance
Power Up/Down Control <1s
Attenuator Step 20dB at
VPC2=0V
Applications
802.16 WiMAX Driver or Output
Stage
802.11b/g WiFi, WiFi
DS110620
Package: QFN, 6mmx6mm
SZM-2066Z
2.4GHz to
2.7GHz 2W
Power Am pli-
fier
Parameter Specification Unit Condition
Min. Typ. Max.
Frequency of Operation 2500 2700 MHz
Output Power at 1dB Compression 32.0 33.5 dBm 2.7GHz
Small Signal Gain 32.2 33.7 dB 2.7GHz
EVM 2.5 % 2.7GHz, 802.11g 54Mb/s at POUT=26dBm
Third Order Supression -45.0 -40.0 dBc 2.7GHz, POUT =23dBm per tone
Noise Figure 7.7 dB 2.7GHz
Worst Case Input Return Loss 7.5 10.5 dB 2.5GHz to 2.7GHz
Worst Case Output Return Loss 12.5 15.5 dB 2.5GHz to 2.7GHz
Output Voltage Range 0.9 to 1.8 V POUT =10dBm to 33dBm
Quiescent Current 454 583 659 mA VCC=5V
Power Up Control Current 4.0 mA VPC=5V, IVPC1+IVPC2 +IVPC3
VCC Leakage Current 100 AV
CC=5V, VPC =0V
Thermal Resistance 12.0 °C/W junction - lead
Test Conditions: Z0=50, VCC=5V, IQ=583mA, TBP =30°C
2 of 18 DS110620
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SZM-2066Z
Typical Performance with appropriate app circuit (VCC=5V, ICQ=583mA, *802.11g 54Mb/s 64QAM)
Simplified Device Schematic
Absolute Maximum Ratings
Parameter Rating Unit
VC3 Collector Bias Current (IVC3) 1500 mA
VC2 Collector Bias Current (IVC2) 500 mA
VC1 Collector Bias Current (IVC1)150mA
****Device Voltage (VD)9.0V
Power Dissipation 6 W
***Max CW RF output Power for
50W continuous long term oper-
ation
30 dBm
Max CW RF output Power for 50
output load 26 dBm
Max CW RF Input Power for 10:1
VSWR out load 5dBm
Storage Temperature Range -40 to +150 °C
Operating Temp Range (TL) -40 to +85 °C
Operating Junction Temperature (TJ)+150 °C
ESD Rating - Human Body Model 1000 V
***With specified application circuit
****No RF Drive
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l
Parameter Unit **2.4
GHz
2.5
GHz
2.6
GHz
2.7
GHz
Gain @ POUT=26dBm dB 37.5 36.9 36.5 34.6
P1dB dBm34.633.533.533.9
POUT @ 2.5% EVM* dBm 27.0 26.0 26.0 26.5
Current @ POUT 2.5% EVM* mA 703 710 700 712
Input Return Loss dB -12.1 -11.5 -10.8 -10.5
Output Return Loss dB -27 -15.6 -28 -18.5
Step Attentuation (VPC2= 0 V) dB 27 27 26 25
Test Conditions: **Measured with 2.4GHz to 2.5GHz Application circuit.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 18DS110620
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SZM-2066Z
VBIAS12
RFOUT
R2A
RFIN
VC1
RFOUT
RFOUT
RFOUT
RFOUT
RFOUT
VPC2
VPC1
NC
R1A
NC
C4A
VPC3
VDET
VBIAS3
C4B
NC
NC
NC
NC
NC
VC2B
C1B
NC
VC2A
C1A
C2B
VB3B
C3B
C2A
VB3A
C3A
GND GND
GND
GND 11
10
40 30
20
131
21
4 of 18 DS110620
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SZM-2066Z
Measured 2.4GHz to 2.5GHz Application Circuit Data (VCC=VPC=5.0V, IQ=556mA, T=25°C)
EVM vs Pout T=+25c
802.11g, OFDM 54Mb/S, 64QAM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12 14 16 18 20 22 24 26 28 30
Pout(dBm)
EVM(%)
2.4GHz 2.5GHz
EVM vs Pout F=2.4GHz
802.11g, OFDM 54Mb/S, 64QAM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12 14 16 18 20 22 24 26 28 30
Pout(dBm)
EVM(%)
-40c +25c +85c
EVM vs Pout F=2.5GHz
802.11g, OFDM 54Mb/S, 64QAM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12 14 16 18 20 22 24 26 28 30
Pout(dBm)
EVM(%)
-40c +25c +85c
IM3 vs Pout (2 Tone Avg.),T=+25c
Tone Spacing = 1MHz
-65
-60
-55
-50
-45
-40
-35
-30
18 20 22 24 26 28
Pout(dBm)
IM3(dBc)
2.4GHz 2.5GHz
Typical Gain vs Pout, F=2.4GHz
31
32
33
34
35
36
37
38
39
40
41
16 18 20 22 24 26 28 30 32 34 36
Pout(dBm)
Gain(dB)
-40c +25c +85c
Typical Gain vs Pout, F=2.5G Hz
31
32
33
34
35
36
37
38
39
40
41
16 18 20 22 24 26 28 30 32 34 36
Pout(dBm)
Gain(dB)
-40c +25c +85c
5 of 18DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZM-2066Z
Measured 2.4GHz to 2.5GHz Application Circuit Data (VCC=VPC=5.0V, IQ=556mA, T=25°C)
Na rrowba nd S 12 - R e vers e Iso lation
-75
-70
-65
-60
-55
-50
-45
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
S12(dB)
-40C +25C +85C
Narrowband S 21 - Forw ard Gain
26
28
30
32
34
36
38
40
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
S21(dB)
-40C +25C +85C
Narrowband S22 - Output R eturn Loss
-35
-30
-25
-20
-15
-10
-5
0
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
S22(dB)
-40C +25C +85C
DC Supply Current vs Pout, T=+25C
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
16 18 20 22 24 26 28 30 32 34
Pout(dBm)
Idc(A)
2.4GHz 2.5GHz
6 of 18 DS110620
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZM-2066Z
Measured 2.4GHz to 2.5GHz Application Circuit Data (VCC=VPC=5.0V, IQ=556mA, T=25°C
RF Power Detector (Vdet) vs Pout, F=2.4GHz
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
16 18 20 22 24 26 28 30 32 34
Pout(dBm)
Vdet(V)
-40c +25c +85c
Noise Figure vs Frequency
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
2.40 2.42 2.44 2.46 2.48 2.50
Frequency(GHz)
NF(dB)
-40C +25C +85C
Broadband S11 - Input Return Loss
-25
-20
-15
-10
-5
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz)
S11(dB)
-40C +25C +85C
Broadband S21 - Forward Gain
26
28
30
32
34
36
38
40
0.01.02.03.04.05.06.0
Frequency(GHz)
S21(dB)
-40C +25C +85C
Broadband S22 - Output Return Loss
-35
-30
-25
-20
-15
-10
-5
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz)
S22(dB)
-40C +25C +85C
2.4-2.5GHz 20dB Step Attenuator Gain Delta vs Temp.
Attenuator Enabled VPC2=0V
20
22
24
26
28
30
32
34
2.4 2.41 2.42 2.43 2.44 2.45 2.46 2.47 2.48 2.49 2.5
Frequency(GHz)
Delta(dB)
T=-40c T=+25c T=+85c
7 of 18DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZM-2066Z
Measured 2.5GHz to 2.7GHz Application Circuit Data (VCC=VPC=5.0V, IQ=583mA, T=25°C)
EVM vs Pout T=+25c
802.11g, OFDM 54Mb/S, 64QAM
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
12 14 16 18 20 22 24 26 28
Pout(dBm)
EVM(%)
2.5GHz 2.6GHz 2.7GHz
EVM vs Pout F=2.5GHz
802.11g, OFDM 54Mb/S, 64QAM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12 14 16 18 20 22 24 26 28
Pout(dBm)
EVM(%)
-40c +25c +85c
802.11g, OFDM 54Mb/S, 64QAM
IM3 vs Pout (2 tone avg.), F=2.5GHz
-65
-60
-55
-50
-45
-40
-35
18 20 22 24 26 28
Pout(dBm)
IM3(dBc)
-40c +25c +85c
IM3 vs Pout (2 tone avg.), F=2.7GHz
-65
-60
-55
-50
-45
-40
-35
18 20 22 24 26 28
Pout(dBm)
IM3(dBc)
-40c +25c +85c
IM3 vs Pout (2 Tone Avg.),T=+25c
Tone Spacing = 1MHz
-65
-60
-55
-50
-45
-40
-35
18 20 22 24 26 28
Pout(dBm)
IM3(dBc)
2.5GHz 2.6GHz 2.7GHz
8 of 18 DS110620
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZM-2066Z
Measured 2.5GHz to 2.7GHz Application Circuit Data (VCC=VPC=5.0V, IQ=583mA, T=25°C)
N a rro wb a n d S11 - In p u t Re tu rn Lo s s
-25
-20
-15
-10
-5
0
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
S11(dB)
-40C +25C +85C
Narrow ban d S12 - Reverse Isolation
-75
-70
-65
-60
-55
-50
-45
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
S12(dB)
-40C +25C +85C
Narrow band S21 - Forw ard Gain
26
28
30
32
34
36
38
40
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
S21(dB)
-40C +25C +85C
N a rro wba n d S2 2 - Ou tp u t Retu rn L os s
-30
-25
-20
-15
-10
-5
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0
Frequency(GHz)
S22(dB)
-40C +25C +85C
DC Supply Current vs Pout, F=2.5GHz
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
16 18 20 22 24 26 28 30 32 34
Pout(dBm)
Idc(A)
-40c +25c +85c
DC Supply Current v s P out, F=2.7GHz
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
16 18 20 22 24 26 28 30 32 34
Pout(dBm)
Idc(A)
-40c +25c +85c
9 of 18DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZM-2066Z
Measured 2.5GHz to 2.7GHz Application Circuit Data (VCC=VPC=5.0V, IQ=583mA, T=25°C)
RF Power Detector (Vdet) vs Pout, F=2.5GHz
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
16 18 20 22 24 26 28 30 32 34
Pout(dBm)
Vdet(V)
-40c +25c +85c
Icq vs Vpc, Vcc=5V, swept Vpc
See App. Circuit pg. 12 for Vpc resistor value used
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
33.544.55
Vpc(V)
Icq(A)
-40c +25c +85c
Noise Figure vs Frequency
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
2.50 2.55 2.60 2.65 2.70
Frequency(GHz)
NF(dB)
-40C +25C +85C
10 of 18 DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZM-2066Z
Measured 2.5GHz to 2.7GHz Application Circuit Data (VCC=VPC=5.0V, IQ=583mA, T=25°C)
Broadband S11 - Input Return Loss
-25
-20
-15
-10
-5
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz)
S11(dB)
-40C +25C +85C
Broadband S21 - Forward Gain
26
28
30
32
34
36
38
40
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz)
S21(dB)
-40C +25C +85C
Broadband S22 - Output Return Loss
-30
-25
-20
-15
-10
-5
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(GHz)
S22(dB)
-40C +25C +85C
2.5-2.7GHz 20dB Step Attenuator Gain Delta vs Temp.
Attenuator Enabled VPC2=0V
20
22
24
26
28
30
32
34
2.5 2.52 2.54 2.56 2.58 2.6 2.62 2.64 2.66 2.68 2.7
Frequency(GHz)
Delta(dB)
T=-40c T=+25c T=+85c
11 of 18DS110620
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SZM-2066Z
Part Symbolization
The part will be symbolized with “SZM-2066Z” to designate it as a RoHS green compliant product. Marking designator will be
on the top surface of the package.
Pin Function Description
7, 11,
12,
22,
29,
31,
39, 40
NC These are no connect (NC) pins and are not wired inside the package. It is recommended to con-nect them as shown in
the application circuit to achieve the stated performance.
1, 10,
21, 30
GND These pins are internally grounded inside the package to the backside ground paddle. It is recommended to also ground
them external to the package to achieve the specified performance.
2VC1
This is the collector of the first stage.
3VBIAS12
This is the supply voltage for the active bias circuit of the 1st and 2nd stages.
4-5 R1A-R2A A resistor is tied across these pins internal to the package.
6RFIN
This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin.
8VPC1
Power up/down control pin for the 1st stage. An external series resistor is required for proper set-ting of bias levels
depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless
the supply current from pin 3 is limited <10mA.
9VPC2
Power up/down control pin for the 2nd stage. Power down VPC2<1V for step attenuator function enable.An external
series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should
never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited <10mA.
13, 38 VC2A, VC2B These two pins are connected internal to the package and connect to the 2nd stage collector. Toachieve specified perfor-
mance, the layout of these pins should match the Recommended Land Pattern.
14-15
17-18
33-34
36-37
C1A-C2A
C3A-C4A
C4B-C3B
C2B-C1B
These pins have capacitors across them internal to the package as shown in the below schematic. They are used as tun-
ing and RF coupling elements between the 2nd and 3rd stage.
16, 35 VB3A, VB3B These are the connections to the base of the 3rd stage output device. To achieve specified perfor-mance, the layout of
these pins should match the Recommended Land Pattern.
19 VPC3 Power up/down control pin for the 2nd stage. An external series resistor is required for proper setting of bias levels
depending on control voltage. The voltage on this pin should never exceed the voltage on pin 32 by more than 0.5V
unless the supply current from pin 33 is limited <10mA.
20 VDET This is the output port for the power detector. It samples the power at the input of the 3rd stage.
23-28 RFOUT
These are the RF output pins and DC connections to the 3rd stage collector.
32 VBIAS3 This is the supply voltage for the active bias circuit of the 3rd stage.
12 of 18 DS110620
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SZM-2066Z
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
13 of 18DS110620
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SZM-2066Z
Recommended Metal Land Pattern
Recommended PCB Soldermask for Land Pattern
14 of 18 DS110620
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SZM-2066Z
2.4GHz to 2.5GHz Evaluation Board Schematic for VCC =V+=VPC =5.0V
15 of 18DS110620
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZM-2066Z
2.4GHz to 2.5GHz Evaluation Board for VCC=V+=VPC =5.0V
Bill of Materials for the 2.4GHz to 2.5GHz Evaluation Board
Desg Description Notes
Q1 SZM-2066Z 6mmx6mm QFN
R1 2.05K, 0603 1% 0402 may be used
R2 4.22K, 0603 1% 0402 may be used
R3 1.02K, 0603 1% 0402 may be used
R4 4.02K, 0603 1% 0402 may be used
R5 47K, 0603 0402 may be used
R6, 7 0, 0603 0402 may be used
C1 1uF 16V MLCC CAP Tantalum ok for EVM performance. Use MLCC type for best IM3 levels.
C2 5.6pF CAP, 0603 NPO, ROHM MCH185A5R6DK or equivalent
C3, 4, 5, 6, 7 0.1 uF CAP, 0603 X7R 0402 ok, ROHM MCH182CN104K or equivalent
C8 2.4pF CAP, 0603 NPO, low ESR, ATC 60052R4CW250 or equivalent
C9 10pF CAP, 0603 X7R 0402 ok, ROHM MCH1182CN104K or equivalent
L1 12nH IND 0805 Coilcraft 0805HQ - 12XJBB
L2 4.7nH IND, 0603 TOKO 0603 - LL1608FH4N7J
L3 10nH IND, 0603 TOKO 0603 - LL1608FH10J
R1 R4R3R2
R5
R6
L3
R7
C1
C2
C3
C6 C5
C8 C9
L2
C4
C7
L1
Q1
16 of 18 DS110620
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZM-2066Z
2.5GHz to 2.7GHz Evaluation Board Schematic for VCC =V+=VPC =5.0V