SILICON EPITAXIAL- BASE NPN POWER DARLINGTONS PRELIMINARY DATA The BDX 53, BDX 53A, BDX 53B and BDX 53C are silicon epitaxial-base NPN transistors in monolithic Dartington configuration in Jedec TO-220 A plastic package, intended for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are respectively the BDX 54, BDX 54A, BDX 548 and BDX 54C. ABSOLUTE MAXIMUM RATINGS BDX 53 | BDX 53A | BDX 538 | BDX 53C Veso Collector-base voitage (I_= 0) Veeo Collector-emitter voltage (I, = 0) Vego Emitter-base voltage (1. = 0) lo Collector current lom Collector peak current (repetitive) ls Base current Prot Total power dissipation at Tease < 25C T stg Storage temperature T; Junction temperature 100 V 45 V | 100 V 60 V | 45V 80 V | 60 V 80 V 5V 8A 12A 0.2A 60 W -55 to 150 C 150 C MECHANICAL DATA Dimensions in mm 85 2,75BDX 53 BDX 53A BDX 538 BDX 536 THERMAL DATA Rin j-case Thermal resistance junction-case max 2.08 C/W Rtn jamb = Thermal resistance junction~ambient max 70 C/W ELECTRICAL CHARACTERISTICS (T,,,.= 25 C unless otherwise specified) Parameter Test conditions Min. Typ. Max.] Unit leso Collector cutoff current (I_ = 0) for BDX 53 Vep= 45V 200| vA for BDX 53A Vcg= 60V 200| UA for BDX 53B) Veg= 80V 200) LA for BDX 53C =Veg= 100V 200) vA lcEO Collector cutoff current (Ig= 0) for BDX 53 Vee= 22V 500] vA for BDX 583A Voe= 30V 500] uA for BDX 53B Vcoe= 40V 500) vA for BDX 53C = Vcee= 50V 500) uA leBo Emitter cutoff current (I; = 0) Vep= 5V 2|mA VeEo Gus) Collector-emitter le = 100 mA sustaining voltage for BDX 53 45 Vv (lg = for BDX 53A! 60 Vv for BDX 53B] 80 Vv for BDX 53C /100 Vv VeEgaty Collector-emitter saturation voltage IC =3A lg =12mA 2| V Vee (sat) Base-emitter saturation voltage lc =3A lg =12mA 2.5| V hee DC current gain fe =3A VcE=3V {750 - Ve Parallel-diode forward voltage lp =3A 1.8) V lp =BA 2.5 Vv * Pulsed: pulse duration = 300 us, duty cycle = 1.5% 86BDX 53 BDX 53A BOX 538 BDX 53C Typical collector-emitter saturation Typical DC transconductance voltage G- 1495, G- 1496 cE (sat) (v) 2 1 0 2 4 6 Ip (A) 0 1 2 Veg (v) Typical DC current gain Typical saturated switching characte- ristics t G- 1496 hee, (us) 2 6 = 1 2 o 5 Ipi12-1p2 4 2 10? 3 6 2 + : ' 10? t s 6 o64 ? a 6 8 107 1 Ig CA) 2 4 6 Ig (A) 87BDX 53 BDX 53A BDX 538 BDX 536 Power rating chart G-use Prop MAX (%) 120 0 20 6 600 2 Tease (C? Internal circuit diagram ~ RY Typ Wk Q R2 yp. 1500 0" 88LON X3H oo 3270 YN NX 91 Y3070s os EZ NN ep oR NE @ f+ uatisvm W201 V9Z0 UN LS Qe eave Wi3N > G) @7Z0 UN _. SN ONLLVTASNI >0 40 _ __ (xeuwutz) WNIS LY3H YOLV INSNI VIIN gl) 01 3a ONHSNE ONILYINSNI aeo 4a Y3HSWM t#__VL3aW YVINONVLI3Y VLD LEZ UN UZ 30INaq a-__ HALIM GaiiddMS LON _~ 2 t20UN _ gsv0zZzZ0L g@v0zz OL SIOJSISUBI} LIWMVWSHSA 40} JuawWaBueLe BuyUunoy 89