Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 6
1Publication Order Number:
MBR0530T1/D
MBR0530T1G,
NRVB0530T1G,
MBR0530T3G,
NRVB0530T3G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
The MBR0530T1/3 uses the Schottky Barrier principle with a large
area metal−to−silicon power diode. Ideally suited for low voltage,
high frequency rectification or as free wheeling and polarity
protection diodes in surface mount applications where compact size
and weight are critical to the system. This package also provides an
easy to work with alternative to leadless 34 package style. These
state−of−the−art devices have the following features:
Features
Guardring for Stress Protection
Low Forward Voltage
125C Operating Junction Temperature
Epoxy Meets UL 94, V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOD−123
CASE 425
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES
30 VOLTS
MARKING DIAGRAM
http://onsemi.com
B3 = Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
Device Package Shipping†
ORDERING INFORMATION
MBR0530T1G SMB
(Pb−Free)
3,000 /
Tape & Reel **
MBR0530T3G SMB
(Pb−Free)
10.000 /
Tape & Reel ***
NRVB0530T1G SMB
(Pb−Free)
3,000 /
Tape & Reel **
NRVB0530T3G SMB
(Pb−Free)
10.000 /
Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
B3 MG
G
1
MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 V
Average Rectified Forward Current
(Rated VR, TL = 100C)
IF(AV) 0.5
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 5.5
A
Storage Temperature Range Tstg −65 to +150 C
Operating Junction Temperature TJ−65 to +125 C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/ms
ESD Rating:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Ambient (Note 1) RqJA 206 C/W
Thermal Resistance − Junction−to−Lead RqJL 150 C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 0.1 Amps, TJ = 25C)
(iF = 0.5 Amps, TJ = 25C)
vF0.375
0.43
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25C)
(VR = 15 V, TC = 25C)
IR130
20
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
1
0.1
0.01
0.15
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
4
1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
5 101520 30354025
100
10
1
0
TJ = 125C 75C 25C -40C75C
25C
IR, REVERSE CURRENT (A)
TJ = 125C
MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G
http://onsemi.com
3
180
160
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
5101520 3025
140
120
100
0
TYPICAL CAPACITANCE AT 0 V = 170 pF
C, CAPACITANCE (pF)
40
60
80
1
0.875
0
LEAD TEMPERATURE (C)
Figure 4. Current Derating (Lead)
67 74 81 88 13095
0.75
0.625
0.5
60
AVERAGE FORWARD CURRENT (AMP)
0.125
0.25
0.375
123116109102
DC
SQUARE WAVE
= p
= 5
= 10
Ipk/Iav = 20
0.35
0.315
0
IF(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 5. Power Dissipation
0.1 0.2 0.3 0.4 0.80.5
0.28
0.245
0.21
0
0.105
0.14
0.175
0.70.6
DC
SQUARE WAVE
= p
= 5
= 10
Ipk/Iav = 20
0.07
0.035
PF(AV), AVERAGE POWER DISSIPATION (WATT)
TJ = 125C
MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
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MBR0530T1/D
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