MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G Surface Mount Schottky Power Rectifier Plastic SOD-123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. These state-of-the-art devices have the following features: http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS Features Mechanical Characteristics SOD-123 CASE 425 STYLE 1 Guardring for Stress Protection Low Forward Voltage 125C Operating Junction Temperature Epoxy Meets UL 94, V-0 @ 0.125 in Package Designed for Optimal Automated Board Assembly AEC-Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb-Free* Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 6 1 MARKING DIAGRAM 1 B3 M G B3 MG G = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping MBR0530T1G SMB (Pb-Free) 3,000 / Tape & Reel ** NRVB0530T1G SMB (Pb-Free) 3,000 / Tape & Reel ** MBR0530T3G SMB (Pb-Free) 10.000 / Tape & Reel *** NRVB0530T3G SMB (Pb-Free) 10.000 / Tape & Reel *** Device ** 8 mm Tape, 7" Reel *** 8 mm Tape, 13" Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBR0530T1/D MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR, TL = 100C) IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg -65 to +150 Operating Junction Temperature TJ -65 to +125 C dv/dt 1000 V/ms Voltage Rate of Change (Rated VR) A 0.5 A 5.5 ESD Rating: Machine Model = C Human Body Model = 3B C V > 400 > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance - Junction-to-Ambient (Note 1) RqJA 206 C/W Thermal Resistance - Junction-to-Lead RqJL 150 C/W Symbol Value Unit 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 Amps, TJ = 25C) (iF = 0.5 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25C) (VR = 15 V, TC = 25C) IR V 0.375 0.43 mA 130 20 104 1 TJ = 125C 75C 25C I R, REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. -40C 0.1 TJ = 125C 1000 100 75C 10 25C 1 0.01 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0 5 10 15 20 25 30 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 35 40 MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G 180 C, CAPACITANCE (pF) 160 TYPICAL CAPACITANCE AT 0 V = 170 pF 140 120 100 80 60 40 20 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance AVERAGE FORWARD CURRENT (AMP) 1 0.875 DC 0.75 0.625 SQUARE WAVE 0.5 =p 0.375 =5 0.25 = 10 0.125 Ipk/Iav = 20 0 60 67 74 81 88 95 102 109 116 123 130 LEAD TEMPERATURE (C) P F(AV), AVERAGE POWER DISSIPATION (WATT) Figure 4. Current Derating (Lead) 0.35 0.315 TJ = 125C SQUARE WAVE 0.28 DC =p 0.245 =5 = 10 0.21 Ipk/Iav = 20 0.175 0.14 0.105 0.07 0.035 0 0 0.1 0.2 0.3 0.4 0.5 0.6 IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 5. Power Dissipation http://onsemi.com 3 0.7 0.8 MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE G D AAAA AAAA A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE DIM A A1 b c D E HE L q E 2 MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0 INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 STYLE 1: PIN 1. CATHODE 2. ANODE q L b MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 0 C SOLDERING FOOTPRINT* EE EE EE 0.91 0.036 2.36 0.093 4.19 0.165 EE EE EE SCALE 10:1 1.22 0.048 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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