BCV26, BCV46
1 Jul-13-2001
PNP Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCV26
BCV46 FDs
FEs 1 = B
1 = B 2 = E
2 = E 3 = C
3 = C SOT23
SOT23
Maximum Ratings
Parameter Symbol BCV26 BCV46 Unit
Collector-emitter voltage VCEO 30 60 V
Collector-base voltage VCBO 40 80
Emitter-base voltage VEBO 10 10
DC collector current IC500 mA
Peak collector current ICM 800
Base current 100
IB
Peak base current IBM 200
Total power dissipation, TS = 74 °C Ptot 360 mW
Junction temperature Tj150 °C
Storage temperature Tst
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
210 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance