DATA SH EET
Product specification
Supersedes data of 1999 Mar 30 2001 Nov 15
DISCRETE SEMICONDUCTORS
BGY785A
750 MHz, 18.5 dB gain push-pull
amplifier
b
ook, halfpage
M3D252
2001 Nov 15 2
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid high dynamic range cascode amplifier module in a
SOT115J package operating with a voltage supply of
24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
Fig.1 Simplified outline.
handbook, halfpage
789
2351
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 18 19 dB
f = 750 MHz 18.5 dB
Itot total current consumption (DC) VB=24V 240 mA
SYMBOL PARAMETER MIN. MAX. UNIT
ViRF input voltage 65 dBmV
Tstg storage temperature 40 +100 °C
Tmb operating mounting base temperature 20 +100 °C
2001 Nov 15 3
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; VB= 24 V; Tcase =30°C; ZS=Z
L=75
Notes
1. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+f
q= 746.5 MHz.
2. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=V
o
;
f
q= 747.25 MHz; Vq=V
o6 dB;
fr= 749.25 MHz; Vr=V
o6 dB;
measured at fp+f
qf
r= 738.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 50 MHz 18 18.5 19 dB
f = 750 MHz 18.5 19.5 dB
SL slope cable equivalent f = 40 to 750 MHz 0 0.9 2 dB
FL flatness of frequency response f = 40 to 750 MHz −±0.1 ±0.3 dB
s11 input return losses f = 40 to 80 MHz 20 30 dB
f = 80 to 160 MHz 18.5 29.5 dB
f = 160 to 320 MHz 17 28 dB
f = 320 to 640 MHz 15.5 26 dB
f = 640 to 750 MHz 14 21 dB
s22 output return losses f = 40 to 80 MHz 20 29 dB
f = 80 to 160 MHz 18.5 26 dB
f = 160 to 320 MHz 17 23.5 dB
f = 320 to 640 MHz 15.5 22 dB
f = 640 to 750 MHz 14 24 dB
CTB composite triple beat 110 channels flat; Vo= 44 dBmV;
measured at 745.25 MHz −−54.5 53 dB
Xmod cross modulation 110 channels flat; Vo= 44 dBmV;
measured at 55.25 MHz −−57.5 56 dB
CSO composite second order
distortion 110 channels flat; Vo= 44 dBmV;
measured at 746.5 MHz −−62 53 dB
d2second order distortion note 1 −−77 65 dB
Vooutput voltage dim =60 dB; note 2 59 62 dBmV
F noise figure f = 50 MHz 4.5 5.5 dB
f = 450 MHz −−5.5 dB
f = 550 MHz −−5.5 dB
f = 600 MHz −−6dB
f = 750 MHz 67dB
I
tot total current consumption (DC) note 3 225 240 mA
2001 Nov 15 4
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
Table 2 Bandwidth 40 to 600 MHz; VB= 24 V; Tcase =30°C; ZS=Z
L=75
Notes
1. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 541.25 MHz; Vq= 44 dBmV;
measured at fp+f
q= 596.5 MHz.
2. Measured according to DIN45004B:
fp= 590.25 MHz; Vp=V
o
;
f
q= 597.25 MHz; Vq=V
o6 dB;
fr= 599.25 MHz; Vr=V
o6 dB;
measured at fp+f
qf
r= 588.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 50 MHz 18 18.5 19 dB
f = 600 MHz 18.5 −−dB
SL slope cable equivalent f = 40 to 600 MHz 0 1.5 dB
FL flatness of frequency response f = 40 to 600 MHz −−±0.3 dB
s11 input return losses f = 40 to 80 MHz 20 30 dB
f = 80 to 160 MHz 18.5 29.5 dB
f = 160 to 320 MHz 17 28 dB
f = 320 to 600 MHz 16 26 dB
s22 output return losses f = 40 to 80 MHz 20 29 dB
f = 80 to 160 MHz 18.5 26 dB
f = 160 to 320 MHz 17 23.5 dB
f = 320 to 600 MHz 16 22 dB
CTB composite triple beat 85 channels flat; Vo= 44 dBmV;
measured at 595.25 MHz −−−57 dB
Xmod cross modulation 85 channels flat; Vo= 44 dBmV;
measured at 55.25 MHz −−−59 dB
CSO composite second order
distortion 85 channels flat; Vo= 44 dBmV;
measured at 596.5 MHz −−−58 dB
d2second order distortion note 1 −−−70 dB
Vooutput voltage dim =60 dB; note 2 61 −−dBmV
F noise figure see Table 1 −−−dB
Itot total current consumption (DC) note 3 225 240 mA
2001 Nov 15 5
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
Table 3 Bandwidth 40 to 550 MHz; VB= 24 V; Tcase =30°C; ZS=Z
L=75
Notes
1. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 493.25 MHz; Vq= 44 dBmV;
measured at fp+f
q= 548.5 MHz.
2. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=V
o
;
f
q= 547.25 MHz; Vq=V
o6 dB;
fr= 549.25 MHz; Vr=V
o6 dB;
measured at fp+f
qf
r= 538.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 50 MHz 18 18.5 19 dB
f = 550 MHz 18.5 −−dB
SL slope cable equivalent f = 40 to 550 MHz 0 1.5 dB
FL flatness of frequency response f = 40 to 550 MHz −−±0.3 dB
s11 input return losses f = 40 to 80 MHz 20 30 dB
f = 80 to 160 MHz 18.5 29.5 dB
f = 160 to 320 MHz 17 28 dB
f = 320 to 550 MHz 16 26 dB
s22 output return losses f = 40 to 80 MHz 20 29 dB
f = 80 to 160 MHz 18.5 26 dB
f = 160 to 320 MHz 17 23.5 dB
f = 320 to 550 MHz 16 22 dB
CTB composite triple beat 77 channels flat; Vo= 44 dBmV;
measured at 547.25 MHz −−61 60 dB
Xmod cross modulation 77 channels flat; Vo= 44 dBmV;
measured at 55.25 MHz −−61 60 dB
CSO composite second order
distortion 77 channels flat; Vo= 44 dBmV;
measured at 548.5 MHz −−67.5 60 dB
d2second order distortion note 1 −−−72 dB
Vooutput voltage dim =60 dB; note 2 62 −−dBmV
F noise figure see Table 1 −−−dB
Itot total current consumption (DC) note 3 225 240 mA
2001 Nov 15 6
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
Table 4 Bandwidth 40 to 450 MHz; VB= 24 V; Tcase =30°C; ZS=Z
L=75
Notes
1. fp= 55.25 MHz; Vp= 46 dBmV;
fq= 391.25 MHz; Vq= 46 dBmV;
measured at fp+f
q= 446.5 MHz.
2. Measured according to DIN45004B:
fp= 440.25 MHz; Vp=V
o
;
f
q= 447.25 MHz; Vq=V
o6 dB;
fr= 449.25 MHz; Vr=V
o6 dB;
measured at fp+f
qf
r= 438.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 50 MHz 18 18.5 19 dB
f = 450 MHz 18.5 −−dB
SL slope cable equivalent f = 40 to 450 MHz 0 1.5 dB
FL flatness of frequency response f = 40 to 450 MHz −−±0.3 dB
s11 input return losses f = 40 to 80 MHz 20 30 dB
f = 80 to 160 MHz 18.5 29.5 dB
f = 160 to 320 MHz 17 28 dB
f = 320 to 450 MHz 16 26 dB
s22 output return losses f = 40 to 80 MHz 20 29 dB
f = 80 to 160 MHz 18.5 26 dB
f = 160 to 320 MHz 17 23.5 dB
f = 320 to 450 MHz 16 22 dB
CTB composite triple beat 60 channels flat; Vo= 46 dBmV;
measured at 445.25 MHz −−−61 dB
Xmod cross modulation 60 channels flat; Vo= 46 dBmV;
measured at 55.25 MHz −−−60 dB
CSO composite second order
distortion 60 channels flat; Vo= 46 dBmV;
measured at 446.5 MHz −−−61 dB
d2second order distortion note 1 −−−75 dB
Vooutput voltage dim =60 dB; note 2 64 −−dBmV
F noise figure see Table 1 −−−dB
Itot total current consumption (DC) note 3 225 240 mA
2001 Nov 15 7
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1q2U1
max. U2W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 20.8 9.1 0.51
0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
bF
p
6-32
UNC
yw
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
U1q
q2
q1
b
F
S
A
Z p
E
A2
L
c
d
Q
U2
M
w
78923
We
e
1
5
p
1
d
max.
yMB
yMB
B
99-02-06
yMB
2001 Nov 15 8
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyoftheseproducts,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 15 9
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
NOTES
2001 Nov 15 10
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
NOTES
2001 Nov 15 11
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain push-pull amplifier BGY785A
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613518/04/pp12 Date of release: 2001 Nov 15 Document order number: 9397 750 08808
Philips Semiconductors - PIP - BGY785A; 750 MHz, 18.5 dB gain push-pull amplifier
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BGY785A; 750 MHz,
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General description
Hybrid high dynamic range cascode amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC).
Features
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
Applications
CATV systems operating in the 40 to 750 MHz frequency range.
Datasheet
Type number Title Publication release date Datasheet status Page count File size (kB) Datasheet
BGY785A 750 MHz, 18.5 dB gain push-pull amplifier 11/15/2001 Product specification 12 59
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Parametrics
Type
number Package Description SLOPE
CABLE
EQUIVALENT
(SL)(dB)
FLATNESS
MAX.(dB) RETURN
LOSS
(INPUT/
OUTPUT)
MIN.(dB)
COMPOSITE
TRIPLE
BEAT
MAX.
4chs(dB)
CROSS
MODULATION
MAX.
(4chs)(dB)
COMPOSITE
2ND
ORDER
BEAT
MAX.(dB)
2ND
ORDER
BEAT
MAX.(dB)
OUTPUT
VOLTAGE
(DBMV)
MIN.
NOISE
FIGURE
MAX(dB)
TOTAL
DC
CURRENT
CONSUMPTION
MAX(mA)
POWER
GAIN(dB) Fmax(MHz) fmin Gp min
@fmin(dB) Gp typ
@fmin(dB) Gp max
@fmin(dB) Gp min
@fmax(dB) SLL SLH FL S11
@fmin
S22
@fmin
CTB XM CSO @Ch @Vo d2 VO Itot Frequency(MHz)
BGY785A SOT115J
SOT115J Forward
Amp 0 to 2.0 +-0.3 20 -53 -56 -53 -65 59.0 7.0@750MHz 240 >18.5@750MHz
18.5+-
0.5@50MHz 750 40 18.0 18.5 19.0 18.5 0.0 2.0 ±0.3 14@fmax
20 14@fmax
20@fmin -
53.0 -
56.0 -
53.0 110 44.0 -
65.0 59.0 240 7.0
Products, packages, availability and ordering
Type number North American type number Ordering code (12NC) Marking/Packing
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BGY785A BGY785A 9340 156 20112 Standard Marking * Bulk Pack SOT115J Full production
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