PBSS4330X,135 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 Nov 28 2004 Dec 06

DISCRETE SEMICONDUCTORS

PBSS4330X

30 V, 3 A

NPN low VCEsat (BISS) transistor

ook, halfpage

M3D109

2004 Dec 06 2

NXP Semiconductors Product data sheet

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

FEATURES

•SOT89 (SC-62) package

•Low collector-emitter saturation voltage VCEsat

•High collector current capability: IC and ICM

•Higher efficiency leading to less heat generation

•Reduced printed-circuit board requirements.

APPLICATIONS

•Power management

– DC/DC converters

– Supply line switching

– Battery charger

– LCD backlighting.

•Peripheral drivers

– Driver in low supply voltag e ap plic ations

(e.g. lamps and LEDs)

– Inductive load dr iver (e.g. relays, bu zzers

and motors).

DESCRIPTION

NPN low V CEsat transistor in a SOT89 plastic package.

MARKING

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE(1)

PBSS4330X *1R

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 30 V

ICcollector current (DC) 3 A

ICM peak collector current 5 A

RCEsat equivalent on-resistance 100 mΩ

PIN DESCRIPTION

1emitter

2collector

3base

321

sym04

Fig.1 Simplified outline (SOT89 ) and symbo l .

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4330X SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

2004 Dec 06 3

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

LIMITING VALUES

In accordance with the Absolute Max imum Rating System (IEC 60134).

Notes

1. Device mounted o n a FR4 printed-circuit b oard; single-sided copper; tin-plated; standard footprint.

2. Device mounted o n a FR 4 printed-circuit board; single-sided copper; ti n- plated; mounting pad for collector 1 cm2.

3. Device mounted o n a FR 4 printed-circuit board; single-sided copper; ti n- plated; mounting pad for collector 6 cm2.

4. Device mounted on a c eramic printed-circuit board 7 cm2, sing le-sided copper, tin-plated.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −50 V

VCEO collector-emitter voltage open base −30 V

VEBO emitter-base voltage open collector −6 V

ICcollector current (DC) note 4 −3 A

ICM peak collector current limited by Tj(max) −5 A

IBbase current (DC) −0.5 A

Ptot total power dissipation Tamb ≤ 25 °C

note 1 −550 mW

note 2 −1 W

note 3 −1.4 W

note 4 −1.6 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

2004 Dec 06 4

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

handbook, halfpage

0 40 80 160

Ptot

(W) (1)

(2)

(3)

1.6

120

1.2

0.8

0.4

MLE372

Tamb (°C)

(4)

Fig.2 Power derating curves.

(1) Ceramic PCB; 7 cm2 mounting pad for collector.

(2) FR4 PCB; 6 cm2 copper mounting pad for collector.

(3) FR4 PCB; 1 cm2 copper mounting pad for collector.

(4) Stand ard footprint.

2004 Dec 06 5

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n a FR4 printed-circuit b oard; single-sided copper; tin-plated; standard footprint.

2. Device mounted o n a FR 4 printed-circuit board; single-sided copper; ti n- plated; mounting pad for collector 1 cm2.

3. Device mounted o n a FR 4 printed-circuit board; single-sided copper; ti n- plated; mounting pad for collector 6 cm2.

4. Device mounted on a c eramic printed-circuit board 7 cm2, sing le-sided copper, tin-plated.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air

note 1 225 K/W

note 2 125 K/W

note 3 90 K/W

note 4 80 K/W

Rth(j-s) thermal resistance from junction to soldering point 16 K/W

006aaa243

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

duty cycle =

1.00

0.75

0.50

0.33

0.20

0.10

0.05

0.02

0.01

Fig.3 Transient thermal impeda nc e as a function of pulse time ; typical values.

Mounted on FR4 printed- circuit board; standard footprint .

2004 Dec 06 6

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

006aaa244

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

duty cycle =

1.00

0.75

0.50

0.20

0.05

0.02

0.01

0.33

0.10

Fig.4 Transient thermal impeda nc e as a function of pulse time ; typical values.

Mounted on F R4 printed-circuit board; mounting pad for collect or 1 cm2.

006aaa245

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

duty cycle =

1.00

0.75

0.50

0.20

0.05

0.02

0.01

0.33

0.10

Fig.5 Transient thermal impeda nc e as a function of pulse time ; typical values.

Mounted on F R4 printed-circuit board; mounting pad for collect or 6 cm2.

2004 Dec 06 7

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = 30 V; IE = 0 A −−100 nA

VCB = 30 V; IE = 0 A; Tj = 150 °C−−50 μA

ICES collector-emitter cut-off current VCE = 30 V; VBE = 0 V −−100 nA

IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 A −−100 nA

hFE DC current gain VCE = 2 V

IC = 0.1 A 300 − −

IC = 0.5 A 300 − −

IC = 1 A; note 1 270 −700

IC = 2 A; note 1 230 − −

IC = 3 A; note 1 180 − −

VCEsat collector-emitter saturation

voltage IC = 0.5 A; IB = 50 mA −−60 mV

IC = 1 A; IB = 50 mA −−110 mV

IC = 2 A; IB = 100 mA −−220 mV

IC = 3 A; IB = 300 mA; note 1 −−300 mV

RCEsat equivalent on-resistance IC = 3 A; IB = 300 mA; note 1 −80 100 mΩ

VBEsat base-emitt er saturatio n voltage IC = 2 A; IB = 100 mA −−1.1 V

IC = 3 A; IB = 300 mA; note 1 −−1.2 V

VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A 1.0 −−V

fTtransition frequen c y IC = 100 mA; VCE = 5 V; f = 100 MHz 100 −−MHz

Cccollector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz −−30 pF

2004 Dec 06 8

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

handbook, halfpage

800

200

400

600

MRC321

10−111010

2103104

hFE

IC (mA)

(1)

(3)

(2)

Fig.6 DC current gain as a fu nction of collector

current; ty pical values.

VCE = 2 V.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

1.2

0.4

0.8

MRC322

10−111010

2103104

VBE

(V)

IC (mA)

(1)

(3)

(2)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

VCE = 2 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

10−1

10−2

10−3

MRC323

10−111010

2104

103

VCEsat

(V)

IC (mA)

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

10−1

10−2

10−3

MRC324

10−111010

2104

103

VCEsat

(V)

IC (mA)

(1)

(2)

(3)

Fig.9 Collector-emitter saturation voltage as a

function of collector current; typical values.

Tamb = 25 °C.

(1) IC/IB = 100.

(2) IC/IB = 50.

(3) IC/IB = 10.

2004 Dec 06 9

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

handbook, halfpage

0.2

1.2

0.8

1.0

MRC325

10−111010

2103104

0.6

0.4

VBEsat

(V)

IC (mA)

(2)

(3)

(1)

Fig.10 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

0 2.0

0.4 0.8 1.2 1.6

MRC326

VCE (V)

(A)

(1)

(2)

(3)

(4)

(5)

(8)

(9)

(10)

(6)

(7)

Fig.11 Co llector current as a function of

collector-emitter voltage; typical values.

Tamb = 25 °C.

(1) IB = 25.0 mA.

(2) IB = 22.5 mA.

(3) IB = 20.0 mA.

(4) IB = 17.5 mA.

(5) IB = 15.0 mA.

(6) IB = 12.5 mA.

(7) IB = 10.0 mA.

(8) IB = 7.5 mA.

(9) IB = 5.0 mA.

(10) IB = 2.5 mA.

handbook, halfpage

102

10−1

10−2

MRC327

10−1110 10

3104

102

RCEsat

(Ω)

IC (mA)

(1) (2)

(3)

Fig.12 Equ i valent on-resistance as a function of

collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.

handbook, halfpage MRC328

10−111010

2103104

10−1

10−2

102

103

RCEsat

(Ω)

IC (mA)

(1)

(2)

(3)

Fig.13 Equ i valent on-resistance as a function of

collector current; typical values.

(1) IC/IB = 10. (2) IC/IB = 5. (3) IC/IB = 1.

Tamb = 25 °C.

2004 Dec 06 10

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Dec 06 11

NXP Semiconductors Pr oduct data shee t

30 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4330X

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

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values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

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Printed in The Netherlands R75/03/pp12 Date of release: 2004 Dec 06 Document orde r number: 9397 750 13882