BUZ 80A SIPMOS (R) Power Transistor * N channel * Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 80A 800 V 3A 3 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 k Values Unit 800 V 800 ID Continuous drain current TC = 50 C A 3 IDpuls Pulsed drain current TC = 25 C 12 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 75 Operating temperature Tj -55 ... ...+ 150 C Storage temperature Tstg -55 ... ...+ 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 Semiconductor Group K/W 55 / 150 / 56 1 07/96 BUZ 80A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 800 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 800 V, VGS = 0 V, Tj = 25 C - 20 250 VDS = 800 V, VGS = 0 V, Tj = 125 C - 100 1000 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 1.5 A Semiconductor Group nA - 2 2.7 3 07/96 BUZ 80A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 1.5 A Input capacitance 1 pF - 1600 2100 - 90 150 - 30 55 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 1.8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 30 45 - 40 60 - 110 140 - 60 80 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 80A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 12 V 1.05 1.3 trr s - 1.8 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 3 - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 6 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 12 - 07/96 BUZ 80A Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) Ptot 80 3.2 W A ID 60 2.4 50 2.0 40 1.6 30 1.2 20 0.8 10 0.4 0 0 0.0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 160 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 2 10 1 A ID C TC K/W t = 670.0ns p 10 1 ZthJC 1 s 10 0 10 s V 100 s 10 -1 DS (o n) 10 0 = DS / D I D = 0.50 R 1 ms 0.20 0.10 10 ms 10 -1 0.05 10 -2 DC 0.02 single pulse 0.01 10 -2 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 80A Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS parameter: tp = 80 s 7.0 10 Ptot = 75W A l kj i h g 6.0 ID VGS [V] 4.0 f a 5.5 5.0 e 4.5 4.0 3.5 d 3.0 2.5 c 2.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 RDS (on) 20 25 30 35 f 4 h g j i k 3 2 a 15 e 5 1 10 d 8 1.0 5 c 6 b 0 b 7 1.5 0.5 0.0 a V VGS [V] = 0 0.0 45 a 4.5 4.0 b 5.0 1.0 c 5.5 d 6.0 e f 6.5 7.0 2.0 3.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 4.0 5.0 VDS A 6.5 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 5.0 3.0 A ID S 4.0 gfs 3.5 2.0 3.0 2.5 1.5 2.0 1.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A ID 07/96 4.0 BUZ 80A Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 1.5 A, VGS = 10 V 4.6 14 V 98% 4.0 12 VGS(th) RDS (on) 11 10 3.6 typ 3.2 9 2.8 8 2.4 7 2% 2.0 6 98% typ 5 1.6 4 1.2 3 0.8 2 0.4 1 0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 10 -1 10 0 Coss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Crss 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS Tj = 150 C (98%) 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 80A Typ. gate charge VGS = (QGate) parameter: ID puls = 5 A Drain-source breakdown voltage V(BR)DSS = (Tj ) 16 960 V V 920 VGS V(BR)DSS 900 880 12 10 860 0,2 VDS max 8 840 820 0,8 VDS max 6 800 4 780 760 2 740 720 -60 0 -20 20 60 100 C 160 Tj Semiconductor Group 8 0 10 20 30 40 50 nC Q Gate 07/96 65 BUZ 80A Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96