DS30270 Rev. 5 - 2 1 of 3 MMBT3904T
www.diodes.com ã Diodes Incorporated
MMBT3904T
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Type Available (MMBT3906T)
·Ultra-Small Surface Mount Package
·Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous IC200 mA
Power Dissipation (Note 1) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
M
JL
D
BC
H
K
G
TOP VIEW
C
E
B
N
Mechanical Data
·Case: SOT-523
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): 1N
·Ordering & Date Code Information, See Page 2
·Weight: 0.002 grams (approximate)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
SOT-523
Dim Min Max Typ
A0.15 0.30 0.22
B0.75 0.85 0.80
C1.45 1.75 1.60
D¾¾0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
J0.00 0.10 0.05
K0.60 0.80 0.75
L0.10 0.30 0.22
M0.10 0.20 0.12
N0.45 0.65 0.50
a0°8°¾
All Dimensions in mm
E
B
C
SPICE MODEL: MMBT3904T
DS30270 Rev. 5 - 2 2 of 3 MMBT3904T
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO 60 ¾VIC= 10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE = 10mA, IC = 0
Collector Cutoff Current ICEX ¾50 nA VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current IBL ¾50 nA VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
40
70
100
60
30
¾
¾
300
¾
¾
¾
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.20
0.30 VIC= 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage VBE(SAT) 0.65
¾
0.85
0.95 VIC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ¾8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 10 kW
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.5 8.0 x 10-4
Small Signal Current Gain hfe 100 400 ¾
Output Admittance hoe 1.0 40 mS
Current Gain-Bandwidth Product fT300 ¾MHz VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure NF ¾5.0 dB VCE = 5.0Vdc, IC = 100mAdc,
RS = 1.0KW, f = 1.0MHz
SWITCHING CHARACTERISTICS
Delay Time td¾35 ns VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time tr¾35 ns
Storage Time ts¾200 ns VCC = 3.0V, IC = 10mA
Fall Time tf¾50 ns IB1 = IB2 = 1.0mA
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
1N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1NYM
Marking Information
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT3904T-7-F.
Device Packaging Shipping
MMBT3904T-7 SOT-523 3000/Tape & Reel
Ordering Information (Note 4)
Year 2002 2003 2004 2005 2006 2007 2008 2009
Code NPRST
UVW
DS30270 Rev. 5 - 2 3 of 3 MMBT3904T
www.diodes.com
0
5
1
5
10
0.1 110 100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Volta
g
e
Cibo
Cobo
f = 1MHz
0
100
150
50
200
2
5
0
0 100 200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 1, Power Deratin
g
Curve
(see Note 1)
0.01
0.1
1
0.1 1 10 100 1000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Saturation Volta
g
e vs. Collector Current
IC
IB=10
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.1
1
10
0.1 110 100 1000
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Volta
g
e vs. Collector Current
IC
IB=10
T=25°C
A
T = 75°C
A
T = -25°C
A
T = 125°C
A
