POWER
SEMICONDUCTOR
LITEON
SM5817 thru SM58 19
FEATURES
For su rface mounted applica tions
M e tal- Semicond uc tor jun ct ion with guardring
Epitaxial construction
Ver y L o w forward volt age drop
High current capability
Plastic materi al ha s UL flamm ability classificatio n 94V-0
Fo r us e in low voltage, high frequency inverte rs,
free w heeling, and polarity protection applications
MECHANICA L DATA
Case : MELF, Molded plastic
Polarity : Color band denotes cathode
Weight : 0.005 ounces, 0.118 grams
Mounting position: Any
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
Maximum Av erage Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum DC Re verse Current
at Rated DC Blocking Voltage
@T
J
=100 C
@T
J
=25 C
1.0
25
0.450
0.750
1.0
10
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Temperature Range
-55 to +150 C
Typical Thermal Resistance (Note 2)
R
0JA
80
C/W
C
J
Typical Junction capacitance (Note 1)
110
pF
mA
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
@T
A
=90 C
20
14
20
SM5817
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to Ambient.
SURFACE MO UNT
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOL TAGE -
20
to
40
Volts
FORWARD CURRENT -
1.0
Ampere
SM-1
All Dimen sio ns in m illime te r
SM-1
DIM. MIN. MAX.
A
C
D
B 4.80 5.20
2.50 2.2 0
2.3 0 2.70
0.60 0.4 0
B
A
C
D
40
28
40
SM5819
30
21
30
SM5818
Maximum forward Voltage
@ 1.0A D
C
@ 3.0A D
C
0.550
0.875 0.600
0.900
MAXIMUM RATINGS AND ELECTRICAL CHARA CT ERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
REV. 1, 24-May-2000
LITEON
RATING AND CHA RACTERISTIC CURVES
SM 5817 th ru SM5819
NUMBER OF CYCLES AT 60Hz
FIG.2 - MA XIMUM NON-REPETIT IVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
1510 50 100
220
0
10
20
30
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAG E F ORWAR D C URRENT ,
AMPERES
0 100 150
0.8
050
0.4
RESISTIVE OR
INDUCTIVE L OAD
1.0
0.6
0.2
AMBIENT TEMPERATURE , C
REVERSE VOLTAGE, (VOLTS)
FIG.4 - TYPICAL JUNCTION CAPACIT ANCE
CAPACITANCE
, (pF)
0
10
1000
100
10 100
TJ= 25 C
f = 1MHz
4
INSTANTANEOUS FORWARD VOLTAGE, (VOL TS)
FIG.3 - TYPICA L FO RWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
0.2 0.4 1.2 1.4
0
0.1
1.0
10
0.6 0.8 1.0 1.8
1.6
TJ= 25 C
PULSEWIDTH:300us
SM5817
SM5819
SM5818
REV. 1, 24-May-2000
