LITE ON POWER SEMICONDUCTOR SM5817 thru SM5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SM-1 For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0 For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications D B C A MECHANICAL DATA Case : MELF, Molded plastic Polarity : Color band denotes cathode Weight : 0.005 ounces, 0.118 grams Mounting position: Any SM-1 DIM. MIN. MAX. A 4.80 5.20 B 2.20 2.50 C 2.30 2.70 D 0.40 0.60 All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current SYMBOL SM5817 SM5818 SM5819 UNIT VRRM VRMS VDC 20 14 20 30 21 30 40 28 40 V V V @TA =90 C I(AV) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC METHOD) IFSM 25 A Maximum forward Voltage @ 1.0A DC @ 3.0A DC @TJ =25 C @TJ =100 C VF 0.450 0.750 0.550 0.875 0.600 0.900 V IR 1.0 10 mA Typical Junction capacitance (Note 1) CJ 110 pF Typical Thermal Resistance (Note 2) R0JA 80 C/W TJ -55 to +125 C TSTG -55 to +150 Maximum DC Reverse Current at Rated DC Blocking Voltage Operating Temperature Range Storage Temperature Range NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal Resistance Junction to Ambient. mA C REV. 1, 24-May-2000 RATING AND CHARACTERISTIC CURVES SM5817 thru SM5819 AVERAGE FORWARD CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 0.8 0.6 0.4 0.2 RESISTIVE OR INDUCTIVE LOAD 0 0 100 50 150 PEAK FORWARD SURGE CURRENT, AMPERES LITE ON FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 30 20 10 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 AMBIENT TEMPERATURE , C 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL JUNCTION CAPACITANCE 1000 10 SM5818 SM5819 CAPACITANCE, (pF) INSTANTANEOUS FORWARD CURRENT, (A) 2 SM5817 1.0 TJ = 25 C 100 PULSEWIDTH:300us TJ = 25 C f = 1MHz 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, (VOLTS) 1.8 0 4 10 100 REVERSE VOLTAGE, (VOLTS) REV. 1, 24-May-2000