Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors TIP42A/42B/42C TO-220 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25) 3. EMITTER Collector current ICM: -6 A Collector-base voltage V(BR)CBO: TIP42A : -60 V TIP42B: -80 V TIP42C: -100 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Symbol unless otherwise specified) Test conditions V(BR)CBO Ic= -1mA, IE=0 V(BR)CEO Ic= -30mA, IB=0 Collector cut-off current 42A 42B 42C V -80 -100 42C Emitter-base breakdown voltage V -80 -60 42A 42B UNIT -100 42C Collector-emitter breakdown voltage MAX -60 42A 42B MIN V(BR)EBO IE= -1mA,IC=0 ICBO VCB=- 60V, IE=0 VCB=- 80V, IE=0 VCB=-100V, IE=0 -5 V -0.4 mA -0.7 mA -1 mA Collector cut-off current 42A 42B 42C VCE= -30V, IB= 0 ICEO VCE= -30V, IB= 0 VCE= -60V, IB= 0 IEBO VEB=-5 V, IC=0 hFE(1) VCE= -4V, IC= -0.3A 30 hFE(2) VCE=- 4V, IC= -3A 15 Collector-emitter saturation voltage VCE(sat) IC=-6A, IB=-0.6A -1.5 V Base-emitter VBE(on VCE= -4V, IC=-6A -2 V Emitter cut-off current DC current gain voltage Transition frequency fT VCE=-10V , IC=-0.5A f =1MHz 3 75 MHZ