MMBT3904TT1G, SMMBT3904TT1G General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique http://onsemi.com GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-416/SC-75 CASE 463 STYLE 1 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 60 Vdc Emitter - Base Voltage VEBO 6.0 Vdc IC 200 mAdc Collector Current - Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1) @TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) @TA = 25C Derated above 25C Symbol PD RqJA PD Max Unit 200 1.6 mW mW/C 600 C/W 300 2.4 mW mW/C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 400 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 1.0 Inch Pad *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 5 1 MARKING DIAGRAM AM M G G 1 AM = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT3904TT1G SOT-416 (Pb-Free) 3,000 Tape & Reel SMMBT3904TT1G SOT-416 (Pb-Free) 3,000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBT3904TT1/D MMBT3904TT1G, SMMBT3904TT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 - 60 - 6.0 - - 50 - 50 40 70 100 60 30 - - 300 - - - - 0.2 0.3 0.65 - 0.85 0.95 300 - - 4.0 - 8.0 1.0 10 0.5 8.0 100 400 1.0 40 - 5.0 - 35 - 35 - 200 - 50 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small -Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF MHz pF pF kW X 10- 4 - mmhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) MMBT3904TT1G, SMMBT3904TT1G td Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) MMBT3904TT1G, SMMBT3904TT1G tr Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) MMBT3904TT1G, SMMBT3904TT1G ts Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904TT1G, SMMBT3904TT1G tf 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 ns r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE MMBT3904TT1G, SMMBT3904TT1G 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 1. Normalized Thermal Response DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms 275 +3 V t1 +10.9 V DUTY CYCLE = 2% 275 10 k 10 k 0 -0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 2. Delay and Rise Time Equivalent Test Circuit Figure 3. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 7.0 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 70 50 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 4. Capacitance Figure 5. Charge Data http://onsemi.com 3 200 MMBT3904TT1G, SMMBT3904TT1G 500 500 IC/IB = 10 200 100 70 50 tr @ VCC = 3.0 V 30 20 40 V 10 7 5 15 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 100 70 50 30 20 10 7 5 2.0 V 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Turn -On Time Figure 7. Rise Time 500 200 500 300 200 IC/IB = 20 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 100 70 50 t f , FALL TIME (ns) t s , STORAGE TIME (ns) VCC = 40 V IC/IB = 10 300 t r, RISE TIME (ns) TIME (ns) 300 200 IC/IB = 20 IC/IB = 10 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 100 70 50 IC/IB = 10 30 20 10 7 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Storage Time Figure 9. Fall Time 200 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 4.0 10 20 40 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 10. Noise Figure Figure 11. Noise Figure http://onsemi.com 4 40 100 MMBT3904TT1G, SMMBT3904TT1G h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 h fe , CURRENT GAIN 200 100 70 50 50 20 10 5 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 10 5.0 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 5.0 Figure 13. Output Admittance Figure 12. Current Gain 10 5.0 2.0 1.0 0.5 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 Figure 14. Input Impedance 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 15. Voltage Feedback Ratio h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V MMBT3904WT1 +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 16. DC Current Gain http://onsemi.com 5 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3904TT1G, SMMBT3904TT1G 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 17. Collector Saturation Region 1.0 1.2 TJ = 25C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C qVB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 18. "ON" Voltages Figure 19. Temperature Coefficients http://onsemi.com 6 180 200 MMBT3904TT1G, SMMBT3904TT1G PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. -E- 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE -D- 1 M D HE C 0.20 (0.008) E INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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