FERRANTI isemiconductors]|. BSS63 PNP Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS64. Encapsulated in the popular SOT-23 package the device is @ designed specifically for use in thin and thick film hybrid circuits in both industrial and commercial applications. The Ferranti SOT-23 package is formed by transfer moulding a SILICONE plastic specially selected to provide a rugged one piece encapsulation resistant to severe environments. SOT-23 Actual size in inset ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Base Voltage Vepo 110 Vv Collector-Emitter Voltage Vceo 100 Vv Emitter-Base Voltage Vepo ~6 Vv Collector Current lo 100 mA Power Dissipation (at Tamp = 25C)* Prot 300 mw Operating and Storage Temperature Range -65 to +175 c *Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 10x 8x 0.6mmBSS63 CHARACTERISTICS (at 25C ambient temperature unless otherwise stated). Parameter Symbol | Min.| Typ.} Max. Unit Conditions Collector-base breakdown voltage |Vigricso |110) _ Vv lo = 10pA Collector-emitter breakdown voltage Vipriceo ~ 100 _ _ Vv lc = 100A Emitter-base breakdown voltage ViBrieBo 6 = - Vv le=10nA Collector cut-off currents Icgo _ 100 nA Vcpg =90V, Ip=0 _ _ 50 pA Veg = 90V, 1e=0 Tj = 150C leso _ _ 200 nA Veg = 6V, Ic =0 Static forward current transfer hee 30 _ _ lc =10mMA, Vcg=1V ratio 30 lc =25mA, Vcp=1V Collector-emitter saturation Vecetsat) _ _ | 250 mV Ic=25mA, Ig=2.5mA voltage Base-emitter saturation voltage VeEtsat) 900 mV Ic=25mA, Ig=2.5mA Output capacitance Cobo 3 pF vee le=0 Transition frequency fr 50 | 85 Miz | Vce=5V. Ic = 25mA f =35MHz BSS63, Page 2BSS63 Prot (mw) o 15 -50 ~25 100 125 150 175 oO 2 sO n AMBIENT TEMPERATURE (C) DERATING CURVE PACKAGE DETAILS LAG 4669/8 0.05 min SOT-23 Dimensions in millimetres These devices are also available with the base and emitter connections reversed. In this case, the suffix R after the type number is used. All other electrical and physical data remains unchanged. Devices are identified by an alpha-numerical code stamped on the body of the device as follows: BSS63_.. Le . .. 3 BSS63R .. Le . .. 16 BSS63, Page 3SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Reverse Reverse Device Standard Joggle Device Standard Joggle Type marking marking Type marking marking BCV71 K7 K6 BFO31 $2 $3 BCV72 K8 Ko BFO31A s4 $5 Bcw29 C1 c4 BFS20 Gl G4 BCW30 c2 C5 BCW31 D1 D4 BSSE3 T3 T6 BSS64 U3 U6 BCW32 D2 D5 BCW33 53 D6 BSS65 1 L5 BSS66 M6 M8 BCW60A AA - BSS67 M7 Mg BCWE60B AB BSS69 L2 L6 BCW60C AC AR BSS70 L3 L7 BCW60D AD _ BSS79B CE _ BCW61A BA CA BSS79C CF _ BCW61B BB cB BSS82B cL - BCW6IC BC cc BSS82C cM - BCW61D BD cD BCW65A EA ~ BSV52 B2 B4 BCW65B EB - BCW6EC EC _ FMMT-AQ5 1H - BCWE66F EF 7P FMMT-A06 1G - BCW6EG EG 5T FMMT-A12 3w - BCW66H EH - FMMT-A13 1M _ ~ FMMT-A14 1N - BCW67A DA ~ EMMT_A20 ic I BCWE67B OB 7 FMMT-A42 3E 7E BCWEIC DC - FMMT-A43 1E SE BCW68F DF ~ FMMT-A55 2H - BCW68G DG 6T FMMT-A56 2G _ BCW68H DH FMMT-A70 2c - BCW69 H1 H4 FMMT-A92 4E 8E BCW70 H2 H5 FMMT-A93 2E 6E BCW71 K1 K4 FMMT918 3B _ BCW72 K2 K5 FMMT2222 1B 2P BCW89 H3 H6 FMMT2222A 1P 3P FMMT2369 J FMMT2369A P5 - BCX17 TI T4 FMMT2484 4G - BCX18 T2 TS FMMtT2907 2B _ BCX19 ul U4 FMMT2907A 2F 5P BCX20 u2 U5 FMMT3903 IW _ BCX70G AG _ FMMT3904 1A - BCX70H AH - FMMT3905 2w - BCX70J AJ AX Arora a 7 BCX70K AK P9 FMMT4125 zD - BCX71G BG cG FMMT5087 2M 3M BCX71H BH 6P BCX71J BJ J8 HT2 27 - BCX71K BK CK HT3 3T _ H2