2SA1832FV
2004-06-17
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832FV
Audio Frequency General Purpose Amplifier Applications
• High voltage: VCEO = −50 V
• High current: IC = −150 mA (max)
• High hFE: hFE = 120 to 400
• Excellent hFE linearity
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• Complementary to 2SC4738FV
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −50 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −150 mA
Base current IB −30 mW
Collector power dissipation PC(Note) 150 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 ~ 150 °C
Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-1L1A
Weight: 0.0015 g(typ.)
Type Name
S Y
hFE Rank
0.5mm
0.45mm
0.45mm
0.4mm
1.BASE
2.EMITTER
3.COLLECTOR
VESM
1.2±0.05
0.32±0.05
1
2 3
0.4
0.4
0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
2SA1832FV
2004-06-17
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 µA
Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 µA
DC current gain hFE
(Note)
VCE = −6 V, IC = −2 mA 120 ⎯ 400
Collector-emitter saturation voltage VCE (sat) IC = −100 mA, IB = −10 mA ― −0.1 −0.3 V
Transition frequency fT VCE = −10 V, IC = −1 mA 80 ⎯ ⎯ MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4 ⎯ pF
Note: hFE Classification Y (Y): 120 ~ 140, GR (G): 200 ~ 400
( ) Marking symbol
2SA1832FV
2004-06-17
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Base current IB (µA)
Base-emitter voltage VBE (V)
IB – VBE
Collector current IC (mA)
fT – IC
Transition frequency fT (MHz)
−0.1
1000
−10 −100 −30 −0.3
300
3000
500
Common emitter
VCE = −10 V
Ta = 25°C
10
−3−1
100
30
50
−3
0 −1.4
−1.0
−0.8
−0.4
−0.3
−1.2
−0.5
−1
−5
−30
−50
−100
−10
Common emitter
VCE = −6 V
Ta = 100°C 25 −25
−0.6
−0.2
−300
−500
−1000
−0.1
−1
−1 −100−30 −0.3
−0.3
−0.5
Common emitter
IC/IB = 10
Ta = 25°C
−0.1
−3−10
−3
−5
−0.1
−0.1
−1 −100−30 −0.3
−0.03
−0.05
Common emitter
IC/IB = 10
−0.01
−3−10
−0.3
−0.5
Ta = 100°C 25
−25
−0.1
1000
−1 −100−30 −0.3
300
Common emitter
V
CE = −6 V
V
CE = −1 V
30
−3−10
500
2000
Ta = 100°C
25
−25
100
50
Collector current IC (mA)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
hFE – IC
DC current gain hFE
0 −8 −4 −2
0
−80
−240
Common emitter
Ta = 25°C
−160
IB = −0.2 mA
−1.5
−6
−2.0
−1.0
−0.5
0
AMBIENT TEMPERATURE Ta (°C)
PC – Ta
COLLECTOR POWER DISSIPATION PC (mW)
200
0 175 125 100 50 150 7525
150
0
50
100
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mmt)
2SA1832FV
2004-06-17
4
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and
sold, under any law and regulations.
030619EA
A
RESTRICTION S ON PRODUCT USE
