T4-LDS-0303-1, Rev. 1 (6/14/13) ©2013 Microsemi Corporation Page 1 of 8
1N5820US – 1N5822US and 1N6864US
Availa ble on
commercial
versions
3 Amp SQ-MELF Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/620
Qualified Levels*:
JAN, JANTX,
JANTXV and JANS
DESCRIPTION
This series of 3 amp Schottky rectifiers are compact in their square MELF packaging for high
density mounting. The 1N5822US and 1N6864US are military qualified for high-reliability
applications.
“B” SQ-MELF
(D-5B) Package
Also available in:
“B” Package
(axial-leaded)
1N5820 – 1N5822, 1N6864
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered surface mount equivalents of 1N5820 – 1N5822 and 1N6864 numbers.
• Hermetically sealed.
• Metallurgically bonded.
• Double plug cons tr uc tion .
• *JAN, JANTX, JANTXV and JANS qualifications ar e av aila bl e per MIL-PRF-19500/620 for
1N6822US and 1N6864US only.
(See Part Nomenclature for all available options.)
• RoHS compliant devices available (commercial grade only on the 1N6822US and 1N6864US).
APPLICATIONS / BENEFITS
• Small size for high density mounting (see package illustration).
• Non-sensitive to ESD per MIL-STD-750 method 1020.
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction Tem perature
TJ
-65 to +125
oC
Storage Temperature
TSTG
-65 to +150
oC
Thermal Resi stan ce Jun cti on-to-End Cap
RӨJEC
10
oC/W
Surge Peak Forward Current @ TA = +25
o
C
(Test pulse = 8.3 ms, half-sine wave.)
IFSM 80 A
(pk)
Average Rectified Output Current @ TEC = +55 oC (1)
IO
3
A
NOTES: 1. See Figures 3 and 4 for derating curves and for effects of VR on TJ. The maximum TJ depends on the
voltage applied.
T4-LDS-0303-1, Rev. 1 (6/14/13) ©2013 Microsem i Corporation Page 2 of 8
1N5820US – 1N5822US and 1N6864US
• CASE: Voidless hermetically sealed hard glass.
• TERMINALS: Tin-lead plate with >3% lead. Solder dip is available upon request. RoHS compliant matte-tin is available on
commercial levels (n o JAN levels) .
• MARKING: Body painted and alpha numeric.
• POLARITY: Cathode indicated by band.
• Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
• See Package Dimensions on last page.
1N5820US – 1N5821US
1N5820 US (e3)
JEDEC type number
See Electrical Characteristics
table
RoHS Compli ance
e3 = RoHS compliant
Blank = non-RoHS compliant
Surface Mount Package
1N5822US and 1N6864US only:
JAN 1N5822 US (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = comm ercial
JEDEC type number
See Electrical Charac teristics
table
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
SYMBOLS & DEFINITIONS
Symbol
Definition
CT Capacitan ce: The capacitance in pF at a frequency of 1 MHz and specified voltage.
f
frequency
IR
Maxi m um Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
IO
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle .
VF Maxi m um Forward Voltage: The maximum forward voltage the device will exhibit at a speci fied current.
VR
Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
T4-LDS-0303-1, Rev. 1 (6/14/13) ©2013 Microsem i Corporation Page 3 of 8
1N5820US – 1N5822US and 1N6864US
TYPE
NUMBER
WORKING
PEAK
REVERSE
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
VFM1
MAXIMUM
FORWARD
VOLTAGE
VFM2
MAXIMUM
FORWARD
VOLTAGE
VFM3
MAXIMUM REVERSE
LEAKAGE CURRENT
IRM @ VRM
VRWM
IFM = 1.0 A
IFM = 3.0 A
IFM = 9.4 A
TJ = +25 ºC
TJ = +100 ºC
V (pk)
Volts
Volts
Volts
mA
mA
1N5820US
20
0.40
0.50
0.70
0.10 @ 20 V
12.5 @ 20 V
1N5821US
30
0.40
0.50
0.70
0.10 @ 30 V
12.5 @ 30 V
1N5822US
40
0.40
0.50
0.70
0.10 @ 40 V
12.5 @ 40 V
1N6864US
80
0.50
0.70
N/A
0.15 @ 80 V
18.0 @ 80 V
T4-LDS-0303-1, Rev. 1 (6/14/13) ©2013 Microsem i Corporation Page 4 of 8
1N5820US – 1N5822US and 1N6864US
TJ, Junction Temperature (ºC)
FIGURE 1
Typical Reverse Leakage Current at Rated PIV (PULSED)
VF, Forward Voltage, Instantaneous (Volts)
FIGURE 2
Typical Forward Voltage
IR, Reverse Current (mA)
IF, Forward Current, Instantaneous (Amps)
T4-LDS-0303-1, Rev. 1 (6/14/13) ©2013 Microsem i Corporation Page 5 of 8
1N5820US – 1N5822US and 1N6864US
TEC, (°C) (End Cap)
FIGURE 3
Temperature Current Derating For 1N5822US
TEC, (°C) (End Cap)
FIGURE 4
Temperature Current Derating For 1N6864US
Sinewave Operation Maximum Io Rating (A)
Sinewave Operation Maximum Io Rating (A)
T4-LDS-0303-1, Rev. 1 (6/14/13) ©2013 Microsem i Corporation Page 6 of 8
1N5820US – 1N5822US and 1N6864US
VF (V)
FIGURE 5
Schottky VF – IF Characteristics (Typical 1N5822US)
VF (V)
FIGURE 6
Schottky VF – IF Characteristics (Typical 1N6864US)
IF(A)
IF (A)
T4-LDS-0303-1, Rev. 1 (6/14/13) ©2013 Microsem i Corporation Page 7 of 8
1N5820US – 1N5822US and 1N6864US
Pad Area per Pad (in2)
FIGURE 7
Thermal Resistance vs FR4 Pad Area Still Air with the PCB horizontal
Thermal Resistance (C/W)
T4-LDS-0303-1, Rev. 1 (6/14/13) ©2013 Microsem i Corporation Page 8 of 8
1N5820US – 1N5822US and 1N6864US
NOTES:
1. Dimensions are in inches. Millimeters are given for inform ation only.
2. Dimensions are pre-solder dip.
3. U-suffix parts are structurally identical to the US-suffix parts.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
DIM
INCH
MILLIMETERS
MIN
MAX
MIN
MAX
BD
0.137
0.148
3.48
3.76
ECT
0.019
0.028
0.48
0.71
BL
0.200
0.225
5.08
5.72
S 0.003 MIN. 0.08 MIN.
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Authorized Distributor
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