SEMiX604GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 1200 V Tc = 25 C 916 A Tc = 80 C 704 A 600 A ICnom ICRM SEMiX(R) 4s Trench IGBT Modules SEMiX604GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE 20 V VCES 1200 V 1800 A -20 ... 20 V 10 s -40 ... 175 C Tc = 25 C 707 A Tc = 80 C 529 A 600 A Tj = 150 C Inverse diode IF Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognized, file no. E63532 Typical Applications* * AC inverter drives * UPS * Electronic Welding Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * Dynamic values apply to the following combination of resistors: RGon,main = 1,0 RGoff,main = 6,2 RG,X = 2,2 RE,X = 0,5 IFRM IFRM = 3xIFnom 1800 A IFSM tp = 10 ms, sin 180, Tj = 25 C 3240 A -40 ... 175 C Tc = 25 C 707 A Tc = 80 C 529 A 600 A Tj Freewheeling diode IF Tj = 175 C IFnom IFRM IFRM = 3xIFnom 1800 A IFSM tp = 10 ms, sin 180, Tj = 25 C 3240 A -40 ... 175 C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 600 A VGE = 15 V chiplevel VGE = 15 V min. typ. max. Unit Tj = 25 C 1.8 2.05 V Tj = 150 C 2.2 2.4 V Tj = 25 C 0.8 0.9 V Tj = 150 C 0.7 0.8 V Tj = 25 C 1.7 1.9 m Tj = 150 C VGE(th) VGE=VCE, IC = 24 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 C 5 2.5 2.7 m 5.8 6.5 V 0.12 0.36 mA Tj = 150 C mA f = 1 MHz 37.2 nF f = 1 MHz 2.32 nF f = 1 MHz 2.04 nF QG VGE = - 8 V...+ 15 V 3400 nC RGint Tj = 25 C 1.25 GAR (c) by SEMIKRON Rev. 0 - 16.11.2010 1 SEMiX604GAR12E4s Characteristics Symbol ns 35 mJ 1277 ns 114 ns Eoff Tj = 150 C RG on = 1.7 Tj = 150 C RG off = 6.9 di/dton = 7100 A/s Tj = 150 C di/dtoff = 6350 A/s Tj = 150 C 110.4 mJ Rth(j-c) per IGBT Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF IRRM * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognized, file no. E63532 Typical Applications* * AC inverter drives * UPS * Electronic Welding Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * Dynamic values apply to the following combination of resistors: RGon,main = 1,0 RGoff,main = 6,2 RG,X = 2,2 RE,X = 0,5 Unit ns td(off) Features max. 85 tf SEMiX604GAR12E4s typ. Tj = 150 C Eon Trench IGBT Modules min. 374 tr SEMiX(R) 4s Conditions VCC = 600 V IC = 600 A Tj = 150 C td(on) Qrr Err Rth(j-c) rF IRRM Qrr Err Rth(j-c) K/W Tj = 25 C 2.1 2.46 V Tj = 150 C 2.1 2.4 V V Tj = 25 C 1.1 1.3 1.5 Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 1.1 1.4 1.6 m 1.7 1.9 2.1 m Tj = 150 C IF = 600 A Tj = 150 C di/dtoff = 6000 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 600 A VGE = 0 V chip VF0 0.049 430 A 100 C 44 mJ 0.086 K/W Tj = 25 C 2.1 2.46 V Tj = 150 C 2.1 2.4 V V Tj = 25 C 1.1 1.3 1.5 Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 1.1 1.4 1.6 m 1.9 2.1 m Tj = 150 C IF = 600 A Tj = 150 C di/dtoff = 6000 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode 1.7 430 A 100 C 44 mJ 0.086 K/W Module LCE RCC'+EE' 22 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 C 0.7 m TC = 125 C 1 m 0.03 to terminals (M6) Mt nH K/W 3 5 2.5 5 Nm Nm Nm w 400 g Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% K GAR 2 Rev. 0 - 16.11.2010 (c) by SEMIKRON SEMiX604GAR12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 16.11.2010 3 SEMiX604GAR12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 - 16.11.2010 (c) by SEMIKRON SEMiX604GAR12E4s SEMiX 4s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 16.11.2010 5