DATA SH EET
Product specification
Supersedes data of 1996 Mar 19 1999 Mar 26
DISCRETE SEMICONDUCTORS
BAS70W series
Schottky barrier (double) diodes
o
ok, halfpage
M3D102
1999 Mar 26 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70W series
FEATURES
•Low forward voltage
•High breakdown voltage
•Guard ring protected
•Very small SMD package
•Low capacitance.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes. Single
diodes (BAS70W) and double diodes
with different pinning (BAS70-04W;
-05W; -06W) are available.
The diodes are encapsulated in a
SOT323 very small plastic SMD
package.
PINNING
PIN BAS70
W -04W -05W -06W
1a
1a
1a
1k
1
2 n.c. k2a2k2
3k
1k
1
, a2k1, k2a1, a2
Fig.1 Simplified outline
(SOT323) and pin
configuration.
h
andbook, 2 columns
3
12
MBC870
Top view
Fig.2 BAS70W single diode
configuration (symbol).
3
12
n.c.
MLC357
Fig.3 BAS70-04W diode
configuration (symbol).
3
12
MLC358
Fig.4 BAS70-05W diode
configuration (symbol).
3
12
MLC359
Fig.5 BAS70-06W diode
configuration (symbol).
3
12
MLC360
MARKING
Note
1. ∗= -: Made in Hong Kong.
∗= t: Made in Malaysia.
TYPE NUMBER MARKING
CODE(1)
BAS70W 73∗
BAS70-04W 74∗
BAS70-05W 75∗
BAS70-06W 76∗
1999 Mar 26 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage −70 V
IFcontinuous forward current −70 mA
IFRM repetitive peak forward current tp≤1s;δ≤0.5 −70 mA
IFSM non-repetitive peak forward current tp<10 ms −100 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.6
IF=1mA 410 mV
IF=10mA 750 mV
IF=15mA 1V
I
Rreverse current VR= 50 V; note 1; see Fig.7 100 nA
VR= 70 V; note 1; see Fig.7 10 µA
τcharge carrier life time (Krakauer method) IF=5mA 100 ps
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.9 2pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
1999 Mar 26 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70W series
GRAPHICAL DATA
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
(4) Tamb =−40 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
10
0 0.2 0.4 0.6 0.8 1
1
IF
(mA)
V (V)
F
MRA803
(1) (4)(2) (3)
102
10 1
10 2
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MRA805
1
10
10
020406080
V (V)
R
IR
(µA) (1)
(3)
(2)
2
10 1
10 2
10 3
f = 10 kHz.
Fig.8 Differential forward resistance as a function
of forward current; typical values.
10
1110
r
diff
IF (mA)
MRA802
10
−1
10
2
10
2
10
3
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
0
0.5
1
1.5
2
0 20406080
MRA804
Cd
(pF)
V (V)
R
1999 Mar 26 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70W series
PACKAGE OUTLINE
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
1999 Mar 26 6
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70W series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Mar 26 7
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70W series
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Mar 26 Document order number: 9397 750 05476
