PAGE . 1March 15,2011-REV.02
BC817-16W SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE 45 V olts 300 mW
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 500mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DAT A
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.001 ounce, 0.005 gram
• Device Marking : BC817-16W : 8S
BC817-25W : 8V
BC817-40W : 8W
POWER
THERMAL CHARACTERISTICS
MAXIMUM RA TINGS
NOTE : Tran sistor mounted on FR-5 board minimum pad mounting conditions.
PARAMETER SYMBOL Value UNIT
C ollecto r- Emitt e r Volt a ge V
CEO
45 V
Collector-Base Voltage V
CBO
50 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current - Continuous I
C
500 mA
Total P o wer Di s s ip a tio n ( NOTE ) P
TOT
300 mW
Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
PARAMETER SYMBOL Value UNIT
Thermal Resistance Junction to Ambient ( NOTE ) R
θJA
420
o
C / W
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)
PAGE . 2March 15,2011-REV.02
BC817-16W SERIES
ELECTRICAL CHARACTERISTICS ( TJ=25oC,unless otherwise notes )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) V
(BR)
CEO 45 - - V
Collector-Base Breakdown Voltage ( V
EB
=0V, Ic=1 0 A ) V
(BR)
CBO 50 - - V
Emitter-Base Breakdown Voltage ( I
E
=1A, Ic=0 ) V
(BR)
EBO 5.0 - - V
Emitter-Base Cutoff Current ( V
EB
=5V ) I
EBO
- - 100 nA
Collector-Base Cutoff Current ( V
CB
=20V, I
E
=0 ) T
J
=25
o
C
T
J
=150
o
CI
CBO
-
--
-100
5.0 nA
A
DC C urrent Gain ( Ic=100mA, V
CE
=1V ) BC817-16W
BC817-25W
BC817-40W h
FE
100
160
250
-
-
-
250
400
600
-
-
-
DC C urrent Gain ( Ic=500mA, V
CE
=1V ) 40---
Collector-Emitter Saturation Voltage ( Ic=500mA, I
B
=50mA ) V
CE(SAT)
--0.7V
Base-Emitte Voltage ( Ic=500mA, V
CE
=1.0 V ) V
BE(ON)
--1.2V
Collector-Base Capacitance (V
CB
=10V, I
E
=0 , f= 1 M H z) C
CBO
-7.0-pF
Current Gain-Bandwidth P roduct ( Ic=10mA, V
CE
=5V, f=100MHz ) f
T
100 - - MHz
PAGE . 3March 15,2011-REV.02
BC817-16W SERIES
0
200
400
600
0.1 1 10 100 1000
IC, Collector Current (mA)
hFE
TJ = 150°C
TJ = 25°C
TJ = 75°C VCE = 1V
0.1
1
10
0.1 1 10 100 1000
IC, Collector Current (mA)
VBE ( SAT ) (V)
TJ = 150°C
TJ = 25°C
0.01
0.1
1
0.1 1 10 100 1000
IC, Collector Current (mA)
VCE ( SAT ) (V)
TJ = 150°C
TJ = 25°C
0
200
400
600
0.1 1 10 100 1000
IC, Collector Current (mA)
hFE
TJ = 150°C
TJ = 25°C
TJ = 75°C
VCE = 1V
1
10
100
0.1 1 10 100
VCB, VEB (V)
CCB, CCB (pF)
CEB
CCB
f =1MHz
TJ=25°C
0
200
400
600
800
0.1 1 10 100 1000
IC, Collector Current (mA)
hFE
TJ = 150°C
TJ = 25°C
TJ = 75°C VCE = 1V
Fig.1 Base-Emitter Saturation Voltage
Fig.3 BC817-16W：Typical DC Current Gain Fig.4 BC817-25W：Typical DC Current Gain
Fig.6 Typical Capacitance
Fig.5 BC817-40W：DC Current Gain
Fig.2 Collector-Emitter Saturation Voltage
IC/IB = 10 IC/IB = 10
PAGE . 4
March 15,2011-REV.02
MOUNTING P AD LA YOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMA TION
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
SOT-323
0.026
(0.66)
0.073
(1.85)
0.034
(0.86)
0.026
(0.65)
0.026
(0.65)
Unit：inch(mm)
BC817-16W SERIES
