BC817-16W SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 300 mW * NPN epitaxial silicon, planar design 0.087(2.20) 0.070(1.80) * Collector current IC = 500mA * In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.078(2.00) 0.004(0.10)MIN. * General purpose amplifier applications 0.087(2.20) FEATURES 0.054(1.35) 0.045(1.15) * Case: SOT-323, Plastic 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) * Terminals: Solderable per MIL-STD-750, Method 2026 * Approx. Weight: 0.001 ounce, 0.005 gram * Device Marking : BC817-16W : 8S 0.004(0.10)MAX. 0.044(1.10) 0.035(0.90) BC817-25W : 8V BC817-40W : 8W 0.016(0.40) 0.008(0.20) MAXIMUM RATINGS PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage V CEO 45 V Collector-Base Voltage V CBO 50 V Emitter-Base Voltage V EBO 5.0 V IC 500 mA P TOT 300 mW TJ , TSTG -55 to +150 oC SYMBOL Value UNIT R JA 420 Collector Current - Continuous Total Power Dissipation ( NOTE ) Junction and Storage Temperature Range THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction to Ambient ( NOTE ) oC /W NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions. March 15,2011-REV.02 PAGE . 1 BC817-16W SERIES ELECTRICAL CHARACTERISTICS ( TJ=25oC,unless otherwise notes ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) V(BR)CEO 45 - - V Collector-Base Breakdown Voltage ( VEB=0V, Ic=10A ) V(BR)CBO 50 - - V Emitter-Base Breakdown Voltage ( IE=1A, Ic=0 ) V(BR)EBO 5.0 - - V IEBO - - 100 nA ICBO - - 100 5.0 A hFE 100 160 250 - 250 400 600 - 40 - - - Emitter-Base Cutoff Current ( VEB =5V ) Collector-Base Cutoff Current ( VCB=20V, IE=0 ) DC Current Gain ( Ic=100mA, VCE=1V ) TJ =25oC TJ =150oC BC817-16W BC817-25W BC817-40W DC Current Gain ( Ic=500mA, VCE=1V ) nA Collector-Emitter Saturation Voltage ( Ic=500mA, IB=50mA ) VCE(SAT) - - 0.7 V Base-Emitte Voltage ( Ic=500mA, VCE=1.0V ) VBE(ON) - - 1.2 V CCBO - 7.0 - pF fT 100 - - MHz Collector-Base Capacitance (VCB=10V, IE=0, f=1MHz) Current Gain-Bandwidth Product ( Ic=10mA, V CE=5V, f=100MHz ) March 15,2011-REV.02 PAGE . 2 BC817-16W SERIES 10 1 IC/IB = 10 VCE ( SAT ) (V) VBE ( SAT ) (V) IC/IB = 10 TJ = 150C 1 TJ = 150C 0.1 TJ = 25C TJ = 25C 0.1 0.01 0.1 1 10 100 1000 0.1 IC, Collector Current (mA) 1 10 100 1000 IC, Collector Current (mA) Fig.1 Base-Emitter Saturation Voltage Fig.2 Collector-Emitter Saturation Voltage 600 600 VCE = 1V TJ = 75C TJ = 150C VCE = 1V TJ = 150C 400 hFE hFE 400 TJ = 75C 200 200 TJ = 25C TJ = 25C 0 0 0.1 1 10 100 1000 0.1 10 100 1000 IC, Collector Current (mA) IC, Collector Current (mA) Fig.3 BC817-16WTypical DC Current Gain Fig.4 BC817-25WTypical DC Current Gain 100 800 TJ = 75C CCB, CCB (pF) 400 TJ = 25C 200 f =1MHz TJ=25C CEB VCE = 1V TJ = 150C 600 hFE 1 10 CCB 1 0 0.1 1 10 100 IC, Collector Current (mA) Fig.5 BC817-40WDC Current Gain March 15,2011-REV.02 1000 0.1 1 10 100 VCB, VEB (V) Fig.6 Typical Capacitance PAGE . 3 BC817-16W SERIES MOUNTING PAD LAYOUT SOT-323 Unitinch(mm) 0.073 (1.85) 0.034 (0.86) 0.026 (0.66) 0.026 (0.65) 0.026 (0.65) ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2011 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. March 15,2011-REV.02 PAGE . 4