MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features * AEC-Q101 Qualified and PPAP Capable * S Prefix for Automotive and Other Applications Requiring Unique * COLLECTOR 3 Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Collector -Emitter Voltage VCEO Collector -Base Voltage VCBO MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Emitter -Base Voltage Collector Current - Continuous Electrostatic Discharge Human Body Model Machine Model Value Unit Vdc 140 160 160 180 6.0 Vdc IC 600 mAdc V > 8000 > 400 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR- 5 Board (Note 1) @TA = 25C Derate Above 25C PD Thermal Resistance, Junction-to-Ambient RqJA Total Device Dissipation Alumina Substrate (Note 2) @TA = 25C Derate Above 25C PD Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature MARKING DIAGRAM 3 1 Vdc VEBO ESD 2 EMITTER Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 2 x1x M G G SOT-23 (TO-236) CASE 318 STYLE 6 1 x1x = Device Code M1F = MMBT5550LT G1 = MMBT5551LT M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT5550LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBT5551LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBT5551LT1G SOT-23 (Pb-Free) 10,000/Tape & Reel MMBT5551LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBT5551LT3G SOT-23 (Pb-Free) 10,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 10 1 Publication Order Number: MMBT5550LT1/D MMBT5550L, MMBT5551L, SMMBT5551L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 140 160 - - 160 180 - - 6.0 - - - - - 100 50 100 50 - 50 60 80 60 80 20 30 - - 250 250 - - - - - 0.15 0.25 0.20 - - - 1.0 1.2 1.0 - - 50 100 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MMBT5550 MMBT5551, SMMBT551 MMBT5550 MMBT5551, SMMBT551 Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) V(BR)CEO V(BR)CBO V(BR)EBO MMBT5550 MMBT5551, SMMBT551 MMBT5550 MMBT5551, SMMBT551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 MMBT5551, SMMBT551 MMBT5550 MMBT5551, SMMBT551 MMBT5550 MMBT5551, SMMBT551 Both Types MMBT5550 MMBT5551, SMMBT551 Both Types MMBT5550 MMBT5551, SMMBT551 Collector Emitter Cut-off (VCB = 10 V) (VCB = 75 V) Both Types 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 hFE VCE(sat) VBE(sat) ICES - Vdc Vdc nA MMBT5550L, MMBT5551L, SMMBT5551L 500 300 h FE, DC CURRENT GAIN VCE = 1.0 V VCE = 5.0 V TJ = 125C 200 25C 100 -55C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region 101 0.30 IC/IB = 10 VCE(sat), Coll-Emitt Saturation Voltage (V) IC, COLLECTOR CURRENT (A) VCE = 30 V 100 10-1 TJ = 125C 10-2 75C REVERSE 10-3 FORWARD 25C 10-4 10-5 0.4 IC = ICES 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.25 150C 0.20 0.15 25C 0.10 -55C 0.05 0 0.0001 Figure 3. Collector Cut-Off Region 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 4. VCE(sat) http://onsemi.com 3 0.1 MMBT5550L, MMBT5551L, SMMBT5551L 1.00 1.10 IC/IB = 10 -55C 0.90 0.80 25C 0.70 0.60 150C 0.50 0.40 0.30 0.20 0.0001 VCE = 10 V 1.00 VBE(on), Base-Emitter Voltage (V) VBE(sat), Base-Emitt Saturation Voltage (V) 1.10 0.90 -55C 0.80 25C 0.70 0.60 150C 0.50 0.40 0.30 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.20 0.0001 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 5. VBE(sat) Figure 6. VBE(on) 100 70 50 TJ = - 55C to +135C 1.5 0.5 qVC for VCE(sat) 0 - 0.5 - 1.0 qVB for VBE(sat) - 1.5 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 - 2.0 - 2.5 0.1 TJ = 25C 30 1.0 C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENT (mV/ C) 2.5 2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Temperature Coefficients Figure 8. Capacitances VCC 30 V VBB -8.8 V 10.2 V Vin 100 10 ms INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RB Vout 5.1 k Vin 100 1N914 Values Shown are for IC @ 10 mA Figure 9. Switching Time Test Circuit http://onsemi.com 4 RC 10 20 MMBT5550L, MMBT5551L, SMMBT5551L 1 VCE = 1 V TA = 25C IC, COLLECTOR CURRENT (A) fT, Current Gain Bandwidth Product (Mhz) 1000 100 10 1 0.1 100 1.0 10 IC, COLLECTOR CURRENT (mA) 10 mS 0.1 1.0 S 0.01 0.001 1.0 1000 100 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Current Gain Bandwidth Product Figure 11. Safe Operating Area 1000 500 30 300 20 200 10 Cibo 7.0 5.0 Cobo 3.0 tr @ VCC = 120 V tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 1.0 0.2 IC/IB = 10 TJ = 25C TJ = 25C t, TIME (ns) C, CAPACITANCE (pF) 100 70 50 1000 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 10 0.2 0.3 0.5 20 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 12. Capacitances Figure 13. Turn-On Time http://onsemi.com 5 1.0 50 100 200 MMBT5550L, MMBT5551L, SMMBT5551L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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