©2004 Fairchild Semiconductor Corporation MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
High Voltage General Purpose Diode
Sourced from Process 2V.
Absolute Maximum Ratings *
T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Charac t eris tics
* Device mounted on glass epoxy PCB 1.6” × 1.6” × 0.06”; mounting pad for the collector lead min. 0.93 in 2
Symbol Parameter Value Units
W
IV
Working Inverse Voltage 175 V
I
O
Average Rectified Current 200 mA
I
F
DC Forward Current 600 mA
i
f
Recurrent Peak Forward Current 700 mA
i
f(surge)
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond 1.0
2.0 A
A
T
STG
Storage Temperature Range -55 to +150 °C
T
J
Operating Junction Temperature 150 °C
Symbol Parameter Max. Units
MMBD1401A - 1405A*
P
D
Power Dissipation
Derate above 25°C350
2.8 mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
MMBD1401A / 1403A / 1404A / 1405A
Connection Diagram
3
1
12
3
A29
2
1
2
3
SOT-23
3
12
3
12
1
3
1401A 1403A
1405A1404A
MMBD1401A A29 MMBD1404A A33
MARKING
2NC
MMBD1403A A32 MMBD1405A A34
©2004 Fairchild Semiconductor Corporation MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
Electrical Characteristics
T
A
=25°C unless otherwise no ted
Typical Characteristics
Symbol Parameter Test Conditions Min. Max. Units
B
V
Breakdown Voltage I
R
= 100µA 250 V
I
R
Reverse Leakage V
R
= 120V
V
R
= 175V 40
100 nA
nA
V
F
Forward Voltage MMBD1401A/1403A
MMBD1404A/1405A
MMBD1401A/1403A
MMBD1404A/1405A
I
F
= 10mA
I
F
= 50mA
I
F
= 200mA
I
F
= 200mA
I
F
= 300mA
I
F
= 300mA
760 800
920
1.1
1.0
1.25
1.1
mV
mV
V
V
V
V
C
O
Diode Capacit ance V
R
= 0, f = 1.0MHz 2.0 pF
T
RR
Reverse Recovery Time I
F
= I
R
= 30mA
I
RR
= 1.0mA, R
L
= 100Ω50 nS
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100µAFigure 2. Reverse Current vs Reverse Voltage
IR - 55 to 205V
Figure 3. Reverse Current vs Reverse Voltage
IR - 180 to 255V Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100µA
3 5 10 20 30 50 100
275
300
325
I - REVERSE CURRENT (uA)
V - REVERSE VOLTAGE (V)
R
R
Ta= 25°C
VR
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
55 75 95 115 135 155 175 195
0
10
20
30
40
50
V - REVERSE VOLTAGE (V)
I - REVERSE CURRENT (nA)
R
R
Ta= 25°C
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in T em perature
180 200 220 240
20
30
40
50
60
70
80
90
100
V - REVERSE VOLTAGE (V)
I - REVERSE CURRENT (nA)
R
R
Ta= 2 5°C
255
IR
1 2 3 5 10 20 30 50 100
250
300
350
400
450
I - FORWARD CURRENT (uA)
V - FORWARD VOLTA GE (mV)
F
F
Ta= 2 5°C
VF
©2004 Fairchild Semiconductor Corporation MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
Typical Characteristics
(Continued)
Figure 5. Forward Voltage vs Forward Current
VF - 0.1 to 10mA Figure 6. Forward Voltage vs Forward Current
VF - 10 to 800mA
Figure 7. Forward Voltage vs Ambient Temperature
VF - 1.0µA - 10mA (- 40 to +80°C) Figure 8. Capacitance vs Reverse Voltage
VR - 0 to 5V
Figure 9. Reverse Recovery Time vs
Reverse Recovery Current (Irr) Figure 10. Average Rectified Current(I
O
) &
Forward Current (I
F
) vs Ambient Temperature(T
A
)
VF - 0.1 to 10 mA
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
725 Ta= 25°C
VF
10 20 30 50 100 200 300 500
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
800
Ta= 25°C
VF
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
200
400
600
800
I - FORWARD CURR ENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
Ta= 25°C
Ta= +80°C
Ta= -40°C
VF
0 2 4 6 8 10 12 14
0.8
0.9
1
1.1
1.2
1.3
REVERSE VOLTAGE (V)
CAPACITANCE (pF)
Ta= 2 5°C
15
11.522.53
20
30
40
50
Irr - REV ER SE RECO VERY CURRENT ( m A)
REVERSE RECOVERY (nS)
IF = IR = 30 mA
Rloop = 100 Ohms
050100150
0
100
200
300
400
500
T - AMBIENT TEMPERATURE ( C)
I - CURRENT (mA)
I - FORWARD CURRENT STEADY ST ATE - mA
o
R
Io - AVERAGE RECTIFIED CURRENT - mA
A
©2004 Fairchild Semiconductor Corporation MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
Typical Characteristics
(Continued)
Figure 11. Power Derating Curve
0 50 100 150 200
0
100
200
300
400
500
I - AVERAGE TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
O
D
o
DO-35 Pkg
SOT-23 Pkg
©2004 Fairchild Semiconductor Corporation
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or systems
which, (a) are inten ded for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notic e in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST
®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
VCX™
A
CEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
Across the board. Around the world.™
The Pow er Fra nc hise
®
Programmable Active Droop™
