LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon 3 COLLECTOR BSS64LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector-Emitter Voltage V CEO 80 Vdc Collector-Base Voltage V CBO 120 Vdc Emitter-Base Voltage V EBO 5.0 Vdc 100 mAdc Collector Current -- Continuous IC CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C RJA TJ , Tstg DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 80 -- Vdc Collector-Base Breakdown Voltage (I C = 100 Adc ) V (BR)CBO 120 -- Vdc Emitter-Base Breakdown Voltage V (BR)EBO 5.0 -- Vdc ( V CB = 90 Vdc ) -- 0.1 ( T A = 150C ) Emitter Cutoff Current -- 500 -- 200 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 4.0 mAdc ) (I E = 100 Adc ) Collector Cutoff Current ( V EB = 4.0Vdc ) I CBO I EBO nAdc nAdc 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. M40-1/2 LESHAN RADIO COMPANY, LTD. BSS64LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 20 -- -- V BE(sat) -- -- -- 0.15 0.2 -- -- fT 60 -- MHz C ob -- 20 pF ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 1.0 Vdc) Collector-Emitter Saturation Voltage (I C = 4.0mAdc, I B = 0.4 mAdc) (I C = 50mAdc, I B = 15 mAdc) Forward Base-Emitter Voltage VCE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 20 MHz) Output Capacitance (V CB = 10 Vdc, f = 1.0 MHz) M40-2/2