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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BD675A/677A/679A/681 BD675A/677A/679A/681 Medium Power Linear and Switching Applications * Medium Power Darlington TR * Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC ICP Parameter : BD675A : BD677A : BD679A : BD681 Value 45 60 80 100 Units V V V V 45 60 80 100 V V V V Emitter-Base Voltage 5 V Collector Current (DC) 4 A *Collector Current (Pulse) 6 A 100 mA : BD675A : BD677A : BD679A : BD681 IB Base Current PC Collector Dissipation (TC=25C) TJ TSTG 40 W Junction Temperature 150 C Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD675A : BD677A : BD679A : BD681 Test Condition IC = 50mA, IB = 0 Min. Typ. Max. 45 60 80 100 Units V V V V ICBO Collector-Base Voltage : BD675A : BD677A : BD679A : BD681 VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, VBE = 0 200 200 200 200 A A A A ICEO Collector Cut-off Current : BD675A : BD677A : BD679A : BD681 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 500 500 500 500 A A A A 2 mA : BD675A/677A/679A : BD681 VCE = 3V, IC = 2A VCE = 3V, IC = 1.5A IEBO Emitter Cut-off Current hFE * DC Current Gain VCE(sat) * Collector-Emitter Saturation Voltage : BD675A/677A/679A : BD681 IC = 2A, IB = 40mA IC = 1.5A, IB = 30mA 2.8 2.5 V V * Base-Emitter ON Voltage : BD675A/677A/679A : BD681 VCE = 3V, IC = 2A VCE = 3V, IC = 1.5A 2.5 2.5 V V VBE(on) VEB = 5V, IC = 0 750 750 * Pulse Test: PW=300s, duty Cycle=1.5% Pulsed (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD675A/677A/679A/681 Typical Characteristics 10000 VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 3V 1000 100 0.1 1 Ic = 250 IB 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0.1 10 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 2. Collector-Emitter Saturation Voltage 10 IC(max). Pulsed 10 s IC(max). Continuous DC 4.0 3.8 VCE = 3V 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain IC[A], COLLECTOR CURRENT 1 100s 1 BD675A BD677A BD679A BD681 1ms 10ms 0.1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area PC[W], POWER DISSIPATION 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD675A/677A/679A/681 Package Demensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. 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