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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
www.onsemi.com
© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 21
August 2018
2N5551 / MMBT5551
NPN General-Purpose Amplifier
Ordering Information
Part Number Top Mark Package Packing Method
2N5551TA 5551 TO-92 3L Ammo
2N5551TFR 5551 TO-92 3L Tape and Reel
2N5551TF 5551 TO -92 3L Tape and Reel
2N5551BU 5551 TO-92 3L Bulk
MMBT5551 3S SOT-23 3L Tape and Reel
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
Marking: 3S
TO-92
2N5551 MMBT5551
Description
This device is designed for general-purpose high-voltage
amplifiers and gas discharge display drivers.
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
www.onsemi.com
© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 22
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be op era-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol ParameterValueUnits
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base V oltage 180 V
VEBO Emitter-Base Voltage 6 V
ICCollector current - Continuous 600 mA
TJ, Tstg(2) Junction and Storage Temperature -55 to +150 °C
Symbol Parameter Maximum Units
2N5551 MMBT5551
PDTotal Device Dissipation 625 350 mW
Derate above 25°C5.02.8mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
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© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 3
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size.
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 160 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 180 V
V(BR)EBO Emitter-Base Breakdown V o ltage IE = 10 μA, IC = 0 6.0 V
ICBO Collector Cut-Off Current VCB = 120 V, IE = 0 50 nA
VCB = 120 V, IE = 0, TA = 100°C50μA
IEBO Emitter Cut-Off Current VEB = 4.0 V, IC = 0 50 nA
On Characteristics
hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V 80
IC = 10 mA, VCE = 5.0 V 80 250
IC = 50 mA, VCE = 5.0 V 30
VCE(sat) Collector-Emi tter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.15 V
IC = 50 mA, IB = 5.0 mA 0.20 V
VBE(sat) Base-Emitter On Voltage IC = 10 mA, IB = 1.0 mA 1.0 V
IC = 50 mA, IB = 5.0 mA 1.0 V
Small-Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 10 mA, VCE = 10 V,
f = 100 MHz 100 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 6.0 pF
Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz 20 pF
Hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 50 250
NF Noise Figure IC = 250 μA, VCE= 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz 8.0 dB
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
www.fairchildsemi.com
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 24
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs. Collector
Current Figure 2. Colle ctor-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current Figure 4. Base-Emitte r On Voltage vs. Collector
Current
Figure 5. Collector Cut-Off Current vs. Ambient
Temperature Figure 6. Input and Output Capacitance vs. Reverse
Voltage
1 10 100 1000
0
50
100
150
200
250 125oC
100oC
75oC
-40oC
25oC
VCE=5V
hFE- DC CURRENT GAIN
IC- COLLECTOR CURRENT [mA]
1 10 100
0.01
0.1
1
10 ?10
125oC
100oC
75oC
-40oC25oC
VCE(SAT)- COLLEC TOR-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
110100
0.2
0.4
0.6
0.8
1.0
125oC
100oC
75oC
-40oC
25oC
VBE(SAT)- BASE-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TA = 125oCTA = 100oC
TA = 75oC
TA = -40oC
TA = 25oC
VBE(ON)- BASE-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
Ω
25 50 75 100 125
1
10
50
T - AMBIENT TEMP ERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 10 0V
CB
β
β
012345678910
1
10
100
COB
CIB
CAPACITANCE [pF]
REVERSE BIAS VOLTAGE [V]
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
www.onsemi.com
© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 25
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base Figure 8. Small Signal Current Gain vs. Collector
Current
Figure 9. Power Dissipation vs. Ambient
Temperature
Between Emitter-Base
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
I = 1.0 mA
C
vs
Collector
Current
11050
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h - SMALL SIGNAL CURRENT GAIN
C
FE
FREG = 20 MHz
V = 10V
CE
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
www.onsemi.com
© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 26
Physical Dimensions
Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
(ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packaging/tr/to92pdd_tr.pdf.
D
TO-92 (Bulk)
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
www.onsemi.com
© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 27
Physical Dimensions (Continued)
Figure 11. 3-LEAD, TO92, MOLDED, 0.200 IN-LINE SPACING LD FORM(J62Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packaging/tr/to92_tr.pdf.
D
TO-92 (Tape and Reel, Ammo)
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
www.onsemi.com
© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 28
Physical Dimensions (Continued)
Figure 12. 3- LEAD, SOT2 3 , JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf.
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23
© Semiconductor Components Industries, LLC www.onsemi.com
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