Phillps Semiconductors Product:.specification a Voltage regulator diodes BZV49 series a, FEATURES PINNING Total power dissipation: PIN DESCRIPTION max. 1000 mW 1 anode * Tolerance series: 5% Work ; 2 anode e Working voltage range: nom. 2.4 to 75 V (E24 range) 3 cathode e Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS e General regulation functions. 1 2 DESCRIPTION Medium-power voltage regulator diodes in a plastic SMD SOTB9 8 package. 1 4 2 The diodes are available in the normalized E24 +5% tolerance range. Botton view MaMa244 The series consists of 37 types with nominal working.voitages from 2.4 to 75 V (BZV49-C2V4 to Fig.4 Simplified outline (SOT89) and symbol. BZV49-C75). MARKING TYPE MARKING TYPE MARKING TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE NUMBER CODE NUMBER CODE BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y BZV49-C4V3 4Y3 BZV49-C11 IY BZV49-C30 30Y BZV49-C75 75Y BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y - _ BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y ~ - BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y - - 1996 Oct 28 7-16Philips Semiconductors Product specification Voltage regulator diodes BZV49 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT le continuous forward current - 250 mA Izom non-repetitive peak reverse current | tp = 100 1s; square wave; see Table Tj = 25 C prior to surge Per type Prot total power dissipation Tamb = 25 C; note 1 - 7000 mw P2sm non-repetitive peak reverse power tp = 100 1s; square wave; - 40 Ww dissipation Tj = 25 C prior to surge; see Fig.5 Tstg storage temperature 65 +150 C Tj junction temperature ~ 150 [C Note 1. Device mounted on a ceramic substrate; area = 2.5 cm?; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. 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Device mounted on a ceramic substrate; area = 2.5.cm?; thickness = 0.7 mm. GRAPHICAL DATA 103 300 MBG781 Pzsm IF Ww) (mA) 102 200 10 100 1 0 1071 1 duration (ms) 10 0.6 0.8 Ve (V) 1.0 (1) Tj = 25 C (prior to surge). (2) Tj = 150 C (prior to surge). Tj=25C. Fig.5 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.6 Forward current as a function of forward voltage; typical values. 1996 Oct 28Philips Semiconductors Product specification Voltage regulator diodes BZV49 series {mV/K) -2 -3 3 -2 -1 10 10 10 Iz (A) 1 BZV49-C2V4 to CAV3. T= 25 to 150C. Fig.7 Temperature coefficient as a function of working current; typical values. MBG924 0 4 8 12 16 20 ly (mA) BZV49-C4V7 to C10. T, = 25 to 150 C. Fig.8 Temperature coefficient as a function of working current; typical values. 1996 Oct 28 7-21