SB120 – SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Data Sheet 3061, Rev. —
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Current Capability A B A
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
DO-41
Dim Min Max Min Max
A 25.4 — 1.000 —
B 4.06 5.21 0.159 0.205
C 0.71 0.864 0.028 0.034
D 2.00 2.72 0.079 0.107
In mm In inch
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol SB120 SB130 SB140 SB150 SB160 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 20 30 40 50 60 V
RMS Reverse Voltage VR(RMS) 14 21 28 35 42 V
Average Rectified Output Current (Note 1) @TL = 100°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) IFSM 40 A
Forward Voltage @IF = 1.0A VFM 0.50 0.70 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 0.5
10 mA
Typical Junction Capacitance (Note 2) Cj 110 80 pF
Typical Thermal Resistance Junction to Lead RθJL 15 K/W
Typical Thermal Resistance Junction to Ambient (Note 1) RθJA 50 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
N
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
ote: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
SENSITRON
SEMICONDUCTOR
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