BOE D MM 8235605 004589b S95T MBSIEG SIEMENS AKTIENGESELLSCHAF SIEMENS IGBT Module Preliminary Data Vog = 1200 V I, 22x 200Aat T.=25C I, =2x150Aat T, = 80C @ Power module @ Half-bridge/Chopper @ Including fast free-wheel diodes @ Package with insulated metal base plate @ Package outlines/Circuit diagram: 5a, 5b" TF-23-07 BSM 150 GB 120 D BSM 150 GAL 120 D Half-bridge Chopper Type Ordering Code Type Ordering Code BSM 150 GB 120 D C67076-A2108-A2 BSM 150 GAL 120 D C67076-A2013-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Vor 1200 Vv Collector-gate voltage, Rag = 20 kQ Voer 1200 Gate-emitter voltage Voce +20 Continuous collector current, T, = 25 C Io 200 A Ty = 80 C 150 Pulsed collector current, To = 25 C To puls 400 Te = 80 C 300 Operating and storage temperature range T,, Tstg - 55... + 150 c Power dissipation, T, = 25 C Prot 1250 WwW Thermal resistance, chip-case Rinse <0.1 K/W Insulation test voltage), = 1 min. Vs 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 55/150/56 1) See chapter Package Outline and Circuit Diagrams. 2 Ingulation test voltage between collector and metal base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1 Semiconductor Group 260LOE D MM 8235605 0045497? 4eb MMSIEG BSM 150 GB 120 D BSM 150 GAL 120 D SIEMENS ~~ STEMENS AKTIENGESELLSCHAF Electrical Characteristics at T| = 25 C, unless otherwise specified. Parameter Symbol Values min. | typ. | max. Unit Static Characteristics Collector-emitter breakdown voltage Vor =0,4=2.8mA Vieryces 1200 Gate threshold voltage Voc = Vee, = 10 mA Voecny 4.8 5.5 6.2 Collector-emitter saturation voltage Vor = 15V, I= 150A T, =25C T, =150C Voetsay 2.8 4.0 3.3 4.5 Zero gate voltage collector current Vee = 1200 V, Veg = 0 T, =25C T, =125C Toes 2800 HA Gate-emitter leakage current Vee = 20 V, Voge = 0 does 100 nA AC Characteristics Forward transconductance Voe = 20V, k= 150A Sts 54 Input capacitance Voce = 25 V, Vee = 0, f= 1 MHz Css 22000 Output capacitance, Vgg = 0 Vee = 25 V, Veg = 0, f= 1 MHz Coss 1700 Reverse transfer capacitance Vee = 25 V, Voge = 0, f= 1 MHz Css 700 pF Semiconductor Group 261LOE D MM 8235605 0045898 3b2 SIEMENS MESIEG BSM 150 GB 120 D BSM 150 GAL 120 D SIEMENS AKTIENGESELLSCHAF Switching Characteristics at T, = 125 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. Resistive Load Turn-on delay time 5 (on) ns Voc = 600 V, Voge = 15 V, = 150A Rg jon = 3-3 Q, Rg coy = 3.3.2 - 200 - Rise time t, Voc = 600 V, Veg = 15 V, I = 150A Rg fon = 3-3 Q, Rg for) = 3.3.Q ; - 400 - Turn-off delay time be (oth Voc = 600 V, Veg = 15 V, lb = 150A Rg jon) = 3-3 Q, Ro jo = 3.3 @ - 1100 - Fall time h Voc = 600 V, Veg = 15 V, lo = 150A Rg (on) = 3.3 Q, Ro fon) = 3.3.2 - 500 - Inductive Load Turn-on delay time te (on) ns Voc = 600 V, Voz = 15V, 4 = 150A Rg (on = 3-3 Q, Rg (on) = 3.3.2 120 200 250 Rise time t, Voc = 600 V. Vee = 15 V, = 150A Rg fon) = 3.3 Q, Rg (oy = 3.3. Q 50 100 150 Turn-off delay time La (oth Voc = 600 V, Voge = 15 V, = 150A Rg ton) = 3-3 Q, Rg jot) = 3-3 Q 480 650 800 Fall time ty Veo = 600 V, Vag = 15 V, fp = 150A Rg fon) = 3-3 Q, Rg (om = 3.3 Q 65 90 120 Turn-off loss (Eo = Eons + Ett) cont - 9 mWs Voc = 600 V, Voge = 15 V, = 150A Eote - 7 Rg (or) = 3.3 Q Rg (on) = 3.3.2 Semiconductor Group 262bOE D MM 8235605 0045899 279 MESIEG SIEM BSM 150 GB 120 D ENS BSM 150 GAL 120 D STEMENS AKTIENGESELLSCHAF Electrical Characteristics at T, = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. Free-Wheel Diode Diode forward voltage VE Vv ik =150A, Veg =0 T, =25C - 2.55 - T, =125C - 2.15 - Reverse recovery time tr us & =150A,V,=600V Voe = 0, die/dt = 1500 A/us T, =125 - 0.35 - Reverse recovery charge On uc ik = 150A, Vp = 600 V Voe = 0, dip/dt = - 1500 A/us T, =25 - 8 - T, =125C - 27 - Soft factor S - k =150A,V,=600V Vee = 0, di-/dt = 1500 A/us T, =125C - 1 ~ Thermal resistance Ric - - 0.38 KAW Chip-case Semiconductor Group 263BOE D MM 8235605 0045900 840 MMSIEG BSM 150 GB 120 D SIEMENS BSM 150 GAL 120 D STEMENS AKTIENGESELLSCHAF Characteristics at T, = 25 C, unless otherwise specified. Power dissipation P,,, = f (Tc) Safe operating area /, = f (Vce) parameter: T, = 150 C parameter: single pulse, T, = 25 C T, < 150 C S110 0080 Ssit0odg1 1400 10 A Ww 5 Ray 1200 le 3000 | 102 800 5 600 10! 400 5 200 0 10 i ! 0 20 a 60 80 00 120 C 160 109 65 107 = 5 102 5 108 vst =h he Typ. output characteristics /, = f (Voce) Typ. output characteristics /, = f (Voc) parameter: , = 80 ps, 7, < 25 C parameter: , = 80 us, T,< 125 C SH00201 . . Sul00200 200 r 200 L A Veg = 20V A Veg = 20V 18V 18V. ; 16V ' 16V c 15V 15V 160 14 160 14V 12V 12V 10V 10V 120 120 80 80 40 40 0 0 Mee Semiconductor Group 264BOE D MM 8235605 0045901 787 MSIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Reverse biased safe operating area Io =f (Vce), parameter: T, = 125 C, Vee = 15 V, Roo = 3.3 Q, L (parastic inductance, module) < 50 nH SHl00402 | fepuls i, 2 | I Transient thermal impedance Zac = f (tp), parameter: D = 1, /T Si00057 =H, Semiconductor Group BSM 150 GB 120 D BSM 150 GAL 120 D Safe operating area, short circuit J, = / (Vcr), Veg = 415 V T, $150 C, tg $10 us, 2 < 50 nH S100206 12 tow Tese 10 8 6 | 777 ] Note: Vog Allowed numbers of 2 short circuit:<1000 ~- 4 E Time between short l E rates 0 0 200 400 600 800 1000 1200 V 1400 Vee Typ. on-state characteristics Voe isaty =f (Vee), parameter: Ic, T, - S110 0054 12 - 100A 150A 300A mao 7 = 25C T= 150C Veetsot) 10 5 10 1S Vv 20 Vee 265BOE D MM 4235605 004590e 613 MBSIEG SIEMENS ~~ SIEMENS AKTIENGESELLSCHAF Collector current J, = f (7,) parameter: Vee 2 15 V, T, = 150C S100055 240 A I, 200 t 180 ' 160 140 120 100 80 60 40 20 0 50 100 C 180 a Typ. transfer characteristics /, = f (Vce) parameter: f, = 80 us, Voge = 20 V 400 A 300 | 200 $1100053 I 100 Semiconductor Group BSM 150 GB 120 D BSM 150 GAL 120 D Typ. capacitances C = f (Vce) parameter: Vg_e = 0, f= 1 MHz $1100056 107 = nF 5 10! 10 0" 10 20 30 VO 40 = Ve Typ. gate charge Vcr, Vee =f (Qe) Stooz04 1200 20 y Vv ee B00 16 600 12 400 8 200 4 0 0 0 400 800 4200 1600 nC 2000 +0, 266bOE D MM 4235605 SIEMENS SIEMENS AKTIENGESELLSCHAF Typ. switching time =f (R,) Inductive load, parameter: T, = 125 C Vor = 600 V, Vee = 415 V, 1g = 150A Sil00202 10! ps 5 e 10 to"! 5.9107 = Re Semiconductor Group 0045903 SST MBSIEG BSM 150 GB 120 D BSM 150 GAL 120 D Forward characteristics of fast recovery reverse diode J; = f (V;) parameter: T, Si100208 400 A 300 200 100 Typ. switching time = f (/,) Inductive load, parameter: T, = 125 C Voe = 600 V, Veg = 15 V, RG = 5.60 0 sii00203 10 BS 5 t 107! 0 30 60 90 120 A 150 c 267